公开(公告)号：US08232347B2

公开(公告)日：2012-07-31

申请号：US12700829

申请日：2010-02-05

申请人： Takayuki Ishihara ,  Hiroaki Goto ,  Yoshihiro Ohta ,  Yuji Yamaguchi ,  Go Saito

发明人： Takayuki Ishihara ,  Hiroaki Goto ,  Yoshihiro Ohta ,  Yuji Yamaguchi ,  Go Saito

IPC分类号： C08G81/00 ,  B29B7/00 ,  B29B9/00 ,  B29B9/10

CPC分类号： C08L23/00 ,  C08J3/226 ,  C08J2323/08 ,  C08J2423/00 ,  C08L23/0815 ,  C08L2205/02 ,  Y10S525/902 ,  Y10T428/2998 ,  C08L2666/02 ,  C08L2666/06

摘要： A high-quality oxygen-absorbing resin composition which is obtained without suffering resin scorching. Also provided are pellets for the oxygen-absorbing resin composition which comprise a thermoplastic resin (A) and an oxidation catalyst. After the pellets are mixed with a trigger resin and a thermoplastic resin (C), the trigger resin functions as a trigger to cause the oxidation of the thermoplastic resins (A) and (C) to proceed. As a result, the resultant composition absorbs oxygen.

摘要翻译： 高品质的氧吸收树脂组合物，其不会发生树脂烧焦而得到。 还提供了包含热塑性树脂（A）和氧化催化剂的氧吸收性树脂组合物的粒料。 在颗粒与触发树脂和热塑性树脂（C）混合之后，触发树脂用作引发热塑性树脂（A）和（C）的氧化进行的触发剂。 结果，所得组合物吸收氧气。

公开(公告)号：US07098138B2

公开(公告)日：2006-08-29

申请号：US10404647

申请日：2003-04-02

申请人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

发明人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01J37/32082 ,  H01J37/32477 ,  H01J37/32697 ,  H01J2237/022 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/67069 ,  H01L29/6656

摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

公开(公告)号：US20060171093A1

公开(公告)日：2006-08-03

申请号：US11069551

申请日：2005-03-02

申请人： Hiroaki Ishimura ,  Ken Yoshioka ,  Takahiro Abe ,  Go Saito ,  Motohiko Yoshigai

发明人： Hiroaki Ishimura ,  Ken Yoshioka ,  Takahiro Abe ,  Go Saito ,  Motohiko Yoshigai

IPC分类号： H01H1/00

CPC分类号： H01J37/32706 ,  H01J37/321 ,  H01L21/6833

摘要： In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

摘要翻译： 在使用静电卡盘的等离子体处理装置中，防止等离子体电位的增加，避免异常放电。 等离子体处理装置包括用于在真空容器中产生等离子体的RF源，用于向样品施加RF偏置功率的另一RF源，具有静电卡盘电极的样品台，用于向静电卡盘电压施加静电卡盘电压的DC电源 电极，以及控制器，用于将静电卡盘电压转换为负值，以抑制RF偏置功率的峰 - 峰电压的四分之一到一半的电位差，以抑制等离子体电位的增加。

公开(公告)号：US20060048892A1

公开(公告)日：2006-03-09

申请号：US11253698

申请日：2005-10-20

申请人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

发明人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

IPC分类号： C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32477 ,  H01J37/32697 ,  H01J2237/022 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/67069 ,  H01L29/6656

摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

公开(公告)号：US06709984B2

公开(公告)日：2004-03-23

申请号：US10216720

申请日：2002-08-13

申请人： Go Saito ,  Hiroaki Ishimura ,  Yutaka Kudoh ,  Masamichi Sakaguchi ,  Kazuo Takata

发明人： Go Saito ,  Hiroaki Ishimura ,  Yutaka Kudoh ,  Masamichi Sakaguchi ,  Kazuo Takata

IPC分类号： H01L21311

CPC分类号： H01L21/3086 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/76232

摘要： A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

公开(公告)号：US06680094B2

公开(公告)日：2004-01-20

申请号：US10003055

申请日：2001-12-06

申请人： Atsushi Kikuchi ,  Ikuo Komatsu ,  Toshiki Yamada ,  Yoshihiro Kitano ,  Go Saito

发明人： Atsushi Kikuchi ,  Ikuo Komatsu ,  Toshiki Yamada ,  Yoshihiro Kitano ,  Go Saito

IPC分类号： C08K5098

CPC分类号： C08L51/04 ,  B32B27/08 ,  B32B27/18 ,  B32B27/36 ,  C08F279/00 ,  C08F279/02 ,  C08K5/098 ,  C08K2201/012 ,  C08L23/0861 ,  C08L2312/00 ,  Y10T428/1352 ,  Y10T428/1379 ,  Y10T428/1386 ,  Y10T428/31736 ,  Y10T428/31739 ,  Y10T428/31786 ,  C08L2666/24 ,  C08L2666/02 ,  C08L2666/14 ,  C08L2666/04

摘要： A packaging material having an oxygen-absorbing layer of a thermoplastic resin which is blended with an organic oxidizing component and with a transition metal catalyst, wherein the thermoplastic resin is not substantially oxidized in the presence of the transition metal catalyst. The thermoplastic resin is not deteriorated by oxidation and, hence, oxygen-barrier property is not deteriorated, making it possible to stably suppress the permeation of oxygen over extended periods of time.

摘要翻译： 一种具有与有机氧化组分和过渡金属催化剂共混的热塑性树脂的氧吸收层的包装材料，其中热塑性树脂在过渡金属催化剂存在下基本上不被氧化。 热塑性树脂不会由于氧化而劣化，因此氧阻隔性不劣化，可以在长时间内稳定地抑制氧的渗透。

公开(公告)号：US20110156656A1

公开(公告)日：2011-06-30

申请号：US13000565

申请日：2009-11-17

申请人： Go Saito

发明人： Go Saito

IPC分类号： H02J7/04

CPC分类号： H02J7/0031 ,  H02J2007/0037

摘要： An overcharge protection circuit includes: a voltage detection portion which detects a terminal voltage of a secondary battery; and a control portion, having a normal state in which the secondary battery can be charged, a judgment execution state in which judgement as to whether the secondary battery is in an overcharged state is performed, and a first charging prohibition state in which charging of the secondary battery is prohibited, wherein in the normal state, when a terminal voltage detected by the voltage detection portion exceeds a first overcharge detection voltage set in advance as a voltage at which charging of the secondary battery is to be prohibited, the control portion transitions to the judgment execution state, in the judgment execution state, when an accumulated value, after the judgment execution state is established, of a time interval during which the terminal voltage detected by the voltage detection portion exceeds the first overcharge detection voltage, exceeds a first reference time set in advance, the control portion transitions to the first charging prohibition state, and in the judgment execution state, when the terminal voltage detected by the voltage detection portion falls below a judgment cancellation voltage lower than the first overcharge detection voltage, the control portion transitions to the normal state and enables charging of the secondary battery.

摘要翻译： 过充电保护电路包括：检测二次电池的端子电压的电压检测部; 以及具有二次电池可以充电的正常状态的控制部分执行关于二次电池是否处于过充电状态的判断的判断执行状态，以及第二充电禁止状态， 禁止二次电池，其中在正常状态下，当由电压检测部分检测到的端电压超过预先设定的第二过充电检测电压作为要禁止二次电池的充电的电压时，控制部分转变为 判断执行状态在判断执行状态下，当在判定执行状态被建立之后，在电压检测部分检测到的端子电压超过第一过充电检测电压的时间间隔内的累加值超过第一参考值 预先设定的时间，控制部分转变到第一充电禁止状态，并在判断中 在由电压检测部检测到的端子电压低于低于第一过充电检测电压的判定抵消电压的情况下，控制部转变为正常状态，能够对二次电池进行充电。

公开(公告)号：US20100133468A1

公开(公告)日：2010-06-03

申请号：US12700829

申请日：2010-02-05

申请人： TAKAYUKI ISHIHARA ,  Hiroaki Goto ,  Yoshihiro Ohta ,  Yuji Yamaguchi ,  Go Saito

发明人： TAKAYUKI ISHIHARA ,  Hiroaki Goto ,  Yoshihiro Ohta ,  Yuji Yamaguchi ,  Go Saito

IPC分类号： C09K15/04

CPC分类号： C08L23/00 ,  C08J3/226 ,  C08J2323/08 ,  C08J2423/00 ,  C08L23/0815 ,  C08L2205/02 ,  Y10S525/902 ,  Y10T428/2998 ,  C08L2666/02 ,  C08L2666/06

摘要： A high-quality oxygen-absorbing resin composition which is obtained without suffering resin scorching. Also provided are pellets for the oxygen-absorbing resin composition which comprise a thermoplastic resin (A) and an oxidation catalyst. After the pellets are mixed with a trigger resin and a thermoplastic resin (C), the trigger resin functions as a trigger to cause the oxidation of the thermoplastic resins (A) and (C) to proceed. As a result, the resultant composition absorbs oxygen.

摘要翻译： 高品质的氧吸收树脂组合物，其不会发生树脂烧焦而得到。 还提供了包含热塑性树脂（A）和氧化催化剂的氧吸收性树脂组合物的粒料。 在颗粒与触发树脂和热塑性树脂（C）混合之后，触发树脂起到引发热塑性树脂（A）和（C）氧化的触发剂的作用。 结果，所得组合物吸收氧气。

公开(公告)号：US20090325388A1

公开(公告)日：2009-12-31

申请号：US12198222

申请日：2008-08-26

申请人： Tetsuo Ono ,  Go Saito

发明人： Tetsuo Ono ,  Go Saito

IPC分类号： H01L21/302

CPC分类号： H01L21/31138 ,  H01L21/02071 ,  H01L21/28123 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

摘要： In a semiconductor that has a structure in which a work function controlling metal conductor is provided on a high dielectric insulation film, fine processing is performed without deteriorating a device. In a method of semiconductor processing, in which the semiconductor has an insulation film containing Hf or Zr formed on a semiconductor substrate and a conductor film containing Ti or Ta or Ru formed on an insulation film, and the conductor film is processed by using a resist formed on the conductor film under a plasma atmosphere, the resist is removed under the plasma atmosphere of gas that contains hydrogen and does not contain oxygen.

摘要翻译： 在具有在高介电绝缘膜上设置功函数控制金属导体的结构的半导体中，进行精细处理而不会使器件恶化。 在半导体处理方法中，其中半导体具有包含在半导体衬底上形成的Hf或Zr的绝缘膜和在绝缘膜上形成的含有Ti或Ta或Ru的导体膜，并且通过使用抗蚀剂来处理导体膜 在等离子体气氛下在导体膜上形成，在含氢气体的等离子体气氛下除去抗蚀剂，不含氧。

公开(公告)号：US07224568B2

公开(公告)日：2007-05-29

申请号：US11069551

申请日：2005-03-02

申请人： Hiroaki Ishimura ,  Ken Yoshioka ,  Takahiro Abe ,  Go Saito ,  Motohiko Yoshigai

发明人： Hiroaki Ishimura ,  Ken Yoshioka ,  Takahiro Abe ,  Go Saito ,  Motohiko Yoshigai

IPC分类号： H01L21/683

CPC分类号： H01J37/32706 ,  H01J37/321 ,  H01L21/6833

摘要： In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

摘要翻译： 在使用静电卡盘的等离子体处理装置中，防止等离子体电位的增加，避免异常放电。 等离子体处理装置包括用于在真空容器中产生等离子体的RF源，用于向样品施加RF偏置功率的另一RF源，具有静电卡盘电极的样品台，用于向静电卡盘电压施加静电卡盘电压的DC电源 电极，以及控制器，用于将静电卡盘电压转换为负值，以抑制RF偏置功率的峰 - 峰电压的四分之一到一半的电位差，以抑制等离子体电位的增加。