公开(公告)号：US20070039545A1

公开(公告)日：2007-02-22

申请号：US10554901

申请日：2004-05-25

申请人： Kouichi Nose ,  Koichi Sasagawa ,  Takeshi Furutsuka ,  Shiro Takigawa ,  Yasuhiro Koizumi

发明人： Kouichi Nose ,  Koichi Sasagawa ,  Takeshi Furutsuka ,  Shiro Takigawa ,  Yasuhiro Koizumi

IPC分类号： C23C14/00 ,  H05H1/24

CPC分类号： C23C14/205 ,  B05D1/62 ,  B05D5/068 ,  C23C14/0036 ,  C23C14/0089 ,  C23C14/352 ,  C23C14/562 ,  C23C16/45557 ,  C23C16/509

摘要： The present invention provides film formation systems and film formation methods. A high frequency (HF) electric power supply (11) applies a high frequency voltage to a cathode (5) which is provided, at its rear surface, with a permanent magnet (10), thereby to generate a reactive-mode plasma, and film formation by plasma polymerization is performed by the use of the generated reactive-mode plasma. The pressure of a plasma source gas in a vacuum chamber (1) is regulated, thereby to generate not a reactive-mode plasma but a metallic-mode plasma. The cathode (5) as a target is subjected to sputtering by the generated metallic-mode plasma, and film formation by magnetron sputtering is carried out.

摘要翻译： 本发明提供成膜体系和成膜方法。 高频（HF）电源（11）向在其后表面设置有永磁体（10）的阴极（5）施加高频电压，从而产生电抗等离子体，并且 通过使用所生成的反应型等离子体来进行通过等离子体聚合的膜形成。 调节真空室（1）中的等离子体源气体的压力，从而不产生反应型等离子体而是产生金属模式等离子体。 作为靶的阴极（5）通过所产生的金属模式等离子体进行溅射，并且通过磁控溅射进行成膜。