公开(公告)号：US07670206B2

公开(公告)日：2010-03-02

申请号：US10559135

申请日：2004-06-17

申请人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

发明人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

IPC分类号： B24B49/00

CPC分类号： B24B37/013 ,  B24B49/105 ,  B24B49/12 ,  B24B49/16

摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

公开(公告)号：US07854646B2

公开(公告)日：2010-12-21

申请号：US12688021

申请日：2010-01-15

申请人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

发明人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

IPC分类号： B24B49/00

CPC分类号： B24B37/013 ,  B24B49/105 ,  B24B49/12 ,  B24B49/16

摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

摘要翻译： 本发明涉及一种用于将诸如半导体晶片的基板抛光到平整的基板抛光装置和基板抛光方法。 基板研磨装置具备：具有研磨面（101）的研磨台（100），将基板（W）保持并压靠在研磨台（100）的研磨面（101）上的基板保持架（1），以及 用于测量衬底（W）上的膜的厚度的膜厚测量装置（200）。 衬底保持器（1）具有多个压力可调节室（22〜25），并且基于由膜厚测量装置（200）测量的膜厚调节各个室（22至25）中的压力。

公开(公告)号：US20100112901A1

公开(公告)日：2010-05-06

申请号：US12688021

申请日：2010-01-15

申请人： Tetsuji TOGAWA ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

发明人： Tetsuji TOGAWA ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

IPC分类号： B24B49/04 ,  B24B49/10

CPC分类号： B24B37/013 ,  B24B49/105 ,  B24B49/12 ,  B24B49/16

摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

摘要翻译： 本发明涉及一种用于将诸如半导体晶片的基板抛光到平整的基板抛光装置和基板抛光方法。 基板研磨装置具备：具有抛光面（101）的研磨台（100），将基板（W）保持并压靠在研磨台（100）的研磨面（101）上的基板保持架（1），以及 用于测量衬底（W）上的膜的厚度的膜厚测量装置（200）。 衬底保持器（1）具有多个压力可调节室（22〜25），并且基于由膜厚测量装置（200）测量的膜厚调节各个室（22至25）中的压力。

公开(公告)号：US20080139087A1

公开(公告)日：2008-06-12

申请号：US10559135

申请日：2004-06-17

申请人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

发明人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

IPC分类号： B24B49/04 ,  B24B29/02

CPC分类号： B24B37/013 ,  B24B49/105 ,  B24B49/12 ,  B24B49/16

摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

摘要翻译： 本发明涉及一种用于将诸如半导体晶片的基板抛光到平整的基板抛光装置和基板抛光方法。 基板研磨装置具备：具有抛光面（101）的研磨台（100），将基板（W）保持并压靠在研磨台（100）的研磨面（101）上的基板保持架（1），以及 用于测量衬底（W）上的膜的厚度的膜厚测量装置（200）。 衬底保持器（1）具有多个压力可调节室（22〜25），并且基于由膜厚测量装置（200）测量的膜厚调节各个室（22至25）中的压力。

公开(公告)号：US20080274670A1

公开(公告)日：2008-11-06

申请号：US11596714

申请日：2005-05-23

申请人： Mitsuo Tada ,  Yasunari Suto ,  Hirofumi Ichihara ,  Kenya Ito ,  Tamami Takahashi

发明人： Mitsuo Tada ,  Yasunari Suto ,  Hirofumi Ichihara ,  Kenya Ito ,  Tamami Takahashi

IPC分类号： B24B49/12

CPC分类号： H01L21/67242 ,  B24B9/065 ,  B24B49/12 ,  G01N21/9501 ,  G01N29/44 ,  H01L21/67023 ,  H01L21/67075

摘要： A projecting/receiving unit (52) projects a laser light to a peripheral portion (30) and receives the reflected light while a liquid is being fed to a substrate (14) and is flowing on the peripheral portion (30). A signal processing controller (54) processes the electric signal of the reflected light to decide the state of the peripheral portion (30). The state of the peripheral portion being polished is monitored. Moreover, the polish end point is detected. A transmission wave other than the laser light may also be used. The peripheral portion (30) may also be enclosed by a passage forming member thereby to form a passage properly. The peripheral portion can be properly measured even in the situation where the liquid is flowing on the substrate peripheral portion.

摘要翻译： 投射/接收单元（52）将激光投射到周边部分（30）并且在液体被供给到基板（14）的同时接收反射光并在周边部分（30）上流动。 信号处理控制器（54）处理反射光的电信号以决定周边部分（30）的状态。 监视被抛光的周边部分的状态。 此外，检测到抛光终点。 也可以使用激光以外的透射波。 周边部分（30）也可以由通道形成部件包围，从而适当地形成通道。 即使在液体在基板周边部分上流动的情况下，也可以适当地测量周边部分。

公开(公告)号：US06935935B2

公开(公告)日：2005-08-30

申请号：US10835059

申请日：2004-04-30

申请人： Mitsuo Tada ,  Yasunari Suto

发明人： Mitsuo Tada ,  Yasunari Suto

IPC分类号： G01N25/16 ,  B24B37/015 ,  B24B49/00 ,  B24B49/04 ,  B24B49/10 ,  B24B49/14 ,  G01B11/06 ,  G01B17/02 ,  H01L21/304 ,  H01L21/66

CPC分类号： B24B37/015 ,  B24B49/003 ,  B24B49/04 ,  B24B49/10 ,  G01B11/0666

摘要： A measuring apparatus includes a heating unit for applying heat to a first point within a workpiece or on a surface of a workpiece and propagating the heat to a second point within the workpiece or on the surface of the workpiece. The measuring apparatus further includes a measuring unit for measuring a displacement of the surface of the workpiece at the second point to which the heat has been propagated, and an analyzing unit for analyzing a structure of the workpiece based on the displacement measured by the measuring unit in consideration of a distance between the first point and the second point.

摘要翻译： 测量装置包括加热单元，用于将热量加热到工件内的第一点或工件的表面上，并将热量传播到工件内或工件的表面上的第二点。 测量装置还包括测量单元，用于测量在传播热量的第二点处的工件表面的位移;以及分析单元，用于基于由测量单元测量的位移来分析工件的结构 考虑到第一点和第二点之间的距离。

公开(公告)号：US07508201B2

公开(公告)日：2009-03-24

申请号：US10573593

申请日：2004-10-18

申请人： Mitsuo Tada ,  Yasunari Suto

发明人： Mitsuo Tada ,  Yasunari Suto

IPC分类号： G01B7/06 ,  G01R33/12 ,  G01N27/72

CPC分类号： G01B7/105

摘要： An eddy current sensor (10) has a sensor coil (100) disposed near a conductive film (6) formed on a semiconductor wafer (W) and a signal source (124) configured to supply an AC signal to the sensor coil (100) to produce an eddy current in the conductive film (6). The eddy current sensor (10) includes a detection circuit operable to detect the eddy current produced in the conductive film (6). The detection circuit is connected to the sensor coil (100). The eddy current sensor (10) also includes a housing (200) made of a material having a high magnetic permeability. The housing (200) accommodates the sensor coil (100) therein. The housing (200) is configured so that the sensor coil (100) forms a path of a magnetic flux (MF) so as to effectively produce an eddy current in the conductive film (6).

摘要翻译： 涡电流传感器（10）具有设置在形成在半导体晶片（W）上的导电膜（6）附近的传感器线圈（100）和被配置为向传感器线圈（100）提供AC信号的信号源（124） 以在导电膜（6）中产生涡流。 涡流传感器（10）包括可操作以检测在导电膜（6）中产生的涡流的检测电路。 检测电路连接到传感器线圈（100）。 涡流传感器（10）还包括由具有高磁导率的材料制成的壳体（200）。 壳体（200）容纳传感器线圈（100）。 壳体（200）构造成使得传感器线圈（100）形成磁通（MF）的路径，以便有效地在导电膜（6）中产生涡流。

公开(公告)号：US20070103150A1

公开(公告)日：2007-05-10

申请号：US10573593

申请日：2004-10-18

申请人： Mitsuo Tada ,  Yasunari Suto

发明人： Mitsuo Tada ,  Yasunari Suto

IPC分类号： G01B7/06

CPC分类号： G01B7/105

摘要： An eddy current sensor (10) has a sensor coil (100) disposed near a conductive film (6) formed on a semiconductor wafer (W) and a signal source (124) configured to supply an AC signal to the sensor coil (100) to produce an eddy current in the conductive film (6). The eddy current sensor (10) includes a detection circuit operable to detect the eddy current produced in the conductive film (6). The detection circuit is connected to the sensor coil (100). The eddy current sensor (10) also includes a housing (200) made of a material having a high magnetic permeability. The housing (200) accommodates the sensor coil (100) therein. The housing (200) is configured so that the sensor coil (100) forms a path of a magnetic flux (MF) so as to effectively produce an eddy current in the conductive film (6).

摘要翻译： 涡电流传感器（10）具有设置在形成在半导体晶片（W）上的导电膜（6）附近的传感器线圈（100）和被配置为向传感器线圈（100）提供AC信号的信号源（124） 以在导电膜（6）中产生涡流。 涡流传感器（10）包括可操作以检测在导电膜（6）中产生的涡流的检测电路。 检测电路连接到传感器线圈（100）。 涡流传感器（10）还包括由具有高磁导率的材料制成的壳体（200）。 壳体（200）容纳传感器线圈（100）。 壳体（200）构造成使得传感器线圈（100）形成磁通（MF）的路径，以便有效地在导电膜（6）中产生涡流。

公开(公告)号：US06746319B2

公开(公告)日：2004-06-08

申请号：US10213109

申请日：2002-08-07

申请人： Mitsuo Tada ,  Yasunari Suto

发明人： Mitsuo Tada ,  Yasunari Suto

IPC分类号： B24B4900

CPC分类号： B24B37/015 ,  B24B49/003 ,  B24B49/04 ,  B24B49/10 ,  G01B11/0666

摘要： A measuring apparatus includes a heating unit for applying heat to a first point within a workpiece or on a surface of a workpiece and propagating the heat to a second point within the workpiece or on the surface of the workpiece. The measuring apparatus further includes a measuring unit for measuring a displacement of the surface of the workpiece at the second point to which the heat has been propagated, and an analyzing unit for analyzing a structure of the workpiece based on the displacement measured by the measuring unit in consideration of a distance between the first point and the second point.

摘要翻译： 测量装置包括加热单元，用于将热量加热到工件内的第一点或工件的表面上，并将热量传播到工件内或工件的表面上的第二点。 测量装置还包括测量单元，用于测量在传播热量的第二点处的工件表面的位移;以及分析单元，用于基于由测量单元测量的位移来分析工件的结构 考虑到第一点和第二点之间的距离。

公开(公告)号：US07714572B2

公开(公告)日：2010-05-11

申请号：US11442274

申请日：2006-05-30

申请人： Mitsuo Tada ,  Hironobu Yamasaki ,  Yasunari Suto

发明人： Mitsuo Tada ,  Hironobu Yamasaki ,  Yasunari Suto

IPC分类号： G01B7/06 ,  G01R33/12

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/10 ,  B24B49/105 ,  G01B7/105 ,  G01D5/202 ,  G01R23/10

摘要： A method of detecting a characteristic (such as thickness) of first and second films formed on a substrate includes supplying a sensor coil with a first alternating current having a first frequency when detecting the first film, and a second alternating current having a second frequency when detecting the second film. An eddy current is thereby generated in the first film or the second film. An impedance across the sensor coil is measured, and the characteristic of any one of the first film and the second film is detected based on the impedance.

摘要翻译： 检测形成在基板上的第一和第二膜的特性（例如厚度）的方法包括在检测第一膜时向传感器线圈供给具有第一频率的第一交流电流;以及第二交流电流， 检测第二片。 由此在第一膜或第二膜中产生涡流。 测量传感器线圈两端的阻抗，并且基于阻抗检测第一膜和第二膜中的任何一个的特性。