公开(公告)号：US20110220896A1

公开(公告)日：2011-09-15

申请号：US12891855

申请日：2010-09-28

申请人： Tatsuya MIYAKAWA ,  Youkio Kashio

发明人： Tatsuya MIYAKAWA ,  Youkio Kashio

IPC分类号： H01L33/08 ,  H01L29/786 ,  H01L33/16 ,  H01L21/336

CPC分类号： H01L29/66765 ,  G02F1/1368 ,  G02F2001/136218 ,  H01L27/12 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/78648

摘要： An electric-field blocking film is provided between a BL insulation film and BL insulation film of a transistor, and a blocking film includes those three layers. The electric-field blocking film blocks an electric field produced by a drain electrode, a source electrode, and an n+-Si film. Even if misalignment of the drain electrode, the source electrode, and the n+-Si film in each drive transistor varies to make a portion overlying an i-Si film larger, therefore, the electric field at this portion is blocked by the electric-field blocking film, thereby making a variation in characteristic smaller.

摘要翻译： 在BL绝缘膜和晶体管的BL绝缘膜之间设置电场阻挡膜，并且阻挡膜包括这三层。 电场阻挡膜阻挡由漏电极，源电极和n + -Si膜产生的电场。 即使各驱动晶体管中的漏电极，源电极和n + -Si膜的偏移发生变化，使i-Si膜覆盖的部分变大，因此，该部分的电场被电场 阻挡膜，从而使特性变化更小。

公开(公告)号：US07225986B2

公开(公告)日：2007-06-05

申请号：US10794674

申请日：2004-03-05

申请人： Yasushi Mizutani ,  Tomomi Sawano ,  Yasuo Koshizuka ,  Tatsuya Miyakawa ,  Makoto Sasaki

发明人： Yasushi Mizutani ,  Tomomi Sawano ,  Yasuo Koshizuka ,  Tatsuya Miyakawa ,  Makoto Sasaki

IPC分类号： G06K7/10 ,  G06K7/14

CPC分类号： G06F21/32 ,  G06K9/00006 ,  G09G3/3648 ,  G09G2320/0686

摘要： An image reading system which reads the images of a detectable object comprising an image display device that has an image display area to display images having luminosity corresponding to the display gradation and radiates the display illumination according to this luminosity; a detection surface in which the entire image display area of the image display device is covered with a laminated layer arrangement and a detectable object is placed; an image reading device comprising a first sub-area in the detection surface on which the detectable object is placed and a second sub-area which consists of an area corresponding to at least a portion of the area of the image display area except for the first sub-area; and a plurality of photosensors arranged in a matrix form provided in the first sub-area and second sub-area which has uniform transmittance, wherein at least a portion of the display illumination is permeated and the image of the detectable object is read in the first sub-area. While being able to read a detectable object image adequately, the image display can be performed satisfactorily.

摘要翻译： 一种读取可检测物体的图像的图像读取系统，包括具有图像显示区域的图像显示装置，以显示具有与显示灰度对应的亮度的图像，并根据该亮度照射显示照明; 检测表面，其中图像显示装置的整个图像显示区域被层叠层布置覆盖，并且放置可检测物体; 图像读取装置，包括在其上放置有可检测物体的检测表面中的第一子区域和第二子区域，该第二子区域由对应于图像显示区域的区域的至少一部分的区域组成，除了第一子区域 子区域 以及设置在具有均匀透射率的第一子区域和第二子区域中的矩阵形式的多个光电传感器，其中至少部分显示照明被透过，并且可检测物体的图像在第一子区域中被读取 子区域。 能够充分地读取可检测物体图像，可以令人满意地执行图像显示。

公开(公告)号：US06500701B2

公开(公告)日：2002-12-31

申请号：US09838842

申请日：2001-04-20

申请人： Toshiaki Higashi ,  Tatsuya Miyakawa

发明人： Toshiaki Higashi ,  Tatsuya Miyakawa

IPC分类号： H01L2100

CPC分类号： G02F1/13458 ,  G02F1/1345 ,  G02F1/136227 ,  H01L27/124 ,  H01L27/1288

摘要： A protective film for protecting the channel region of a thin film transistor is formed by a dry etching treatment. Therefore, even if there is a defect in a semiconductor film, pin holes are not formed in a gate insulating film. It follows that the breakdown voltage of the gate insulating film is not lowered even if a scanning signal line, etc., including a gate electrode, are formed of only an Al-based metal film that does not have an anodic oxide film formed on the surface.

摘要翻译： 通过干蚀刻处理形成用于保护薄膜晶体管的沟道区域的保护膜。 因此，即使在半导体膜中存在缺陷，也不会在栅极绝缘膜中形成针孔。 因此，即使包括栅极的扫描信号线等仅由Al基金属膜形成，栅极绝缘膜的击穿电压也不会降低，Al基金属膜不形成在阳极氧化膜上 表面。

公开(公告)号：US5328861A

公开(公告)日：1994-07-12

申请号：US968382

申请日：1992-10-29

申请人： Tatsuya Miyakawa

发明人： Tatsuya Miyakawa

IPC分类号： H01L21/318 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/265

CPC分类号： H01L29/66757 ,  H01L29/4908 ,  Y10S148/09 ,  Y10S148/15

摘要： An amorphous semiconductor layer is deposited on an insulating substrate, and an excimer laser is radiated thereon, and thus the amorphous is crystallized. A silicon oxide layer is deposited on the semiconductor layer, and a silicon nitride layer is deposited on the silicon oxide layer to be thicker than the silicon oxide layer. Thereafter, a gate electrode is formed on the silicon nitride layer. Thus, there is provided a method for a thin film transistor having a good mobility of carriers and a good characteristic of a breakdown voltage in that a gate insulating film is formed of a double-layer structure having the silicon oxide and silicon nitride layers.

摘要翻译： 在绝缘基板上沉积非晶半导体层，并在其上辐射准分子激光，从而使非晶体结晶化。 氧化硅层沉积在半导体层上，并且氮化硅层沉积在氧化硅层上比氧化硅层厚。 此后，在氮化硅层上形成栅电极。 因此，提供了一种具有良好的载流子迁移率和良好的击穿电压特性的薄膜晶体管的方法，因为栅绝缘膜由具有氧化硅和氮化硅层的双层结构形成。

公开(公告)号：US08653569B2

公开(公告)日：2014-02-18

申请号：US12891855

申请日：2010-09-28

申请人： Yukio Kashio ,  Tatsuya Miyakawa

发明人： Yukio Kashio ,  Tatsuya Miyakawa

IPC分类号： H01L31/113

CPC分类号： H01L29/66765 ,  G02F1/1368 ,  G02F2001/136218 ,  H01L27/12 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/78648

摘要： An electric-field blocking film is provided between a BL insulation film and BL insulation film of a transistor, and a blocking film includes those three layers. The electric-field blocking film blocks an electric field produced by a drain electrode, a source electrode, and an n+-Si film. Even if misalignment of the drain electrode, the source electrode, and the n+-Si film in each drive transistor varies to make a portion overlying an i-Si film larger, therefore, the electric field at this portion is blocked by the electric-field blocking film, thereby making a variation in characteristic smaller.

摘要翻译： 在BL绝缘膜和晶体管的BL绝缘膜之间设置电场阻挡膜，并且阻挡膜包括这三层。 电场阻挡膜阻挡由漏电极，源电极和n + -Si膜产生的电场。 即使各驱动晶体管中的漏电极，源电极和n + -Si膜的偏移发生变化，使i-Si膜覆盖的部分变大，因此，该部分的电场被电场 阻挡膜，从而使特性变化更小。

公开(公告)号：US07583826B2

公开(公告)日：2009-09-01

申请号：US10632080

申请日：2003-07-30

申请人： Yoshiaki Nakamura ,  Tatsuya Miyakawa ,  Shigeru Morikawa ,  Tomomi Iihama

发明人： Yoshiaki Nakamura ,  Tatsuya Miyakawa ,  Shigeru Morikawa ,  Tomomi Iihama

IPC分类号： G06K9/00

CPC分类号： G06K9/0004 ,  G06K9/00053 ,  G06K9/00899 ,  H04N5/335

摘要： An image reading apparatus for reading an image pattern of a detecting object comprises a detecting surface on which a detecting object is placed, a sensor array having a plurality of sensors arranged to read an image pattern of the detecting object placed on the detecting surface, a first detection electrode, provided on at least an upper portion of the sensor array, having the detecting surface; a second detection electrode provided to be electrically insulated and spaced from the first detection electrode; a counter electrode provided to be opposite to the first detection electrode through an interlayer insulating film; signal voltage applying circuit which applies a signal voltage having a first signal waveform that varies periodically to the counter electrode to excite a second signal waveform to the first detection electrode through the interlayer insulating film, and contact detector which determines whether the detecting object brought into contact with the detecting surface is a specific detecting object based on a third signal waveform excited to the second detection electrode according to contact of the detecting object with both the first detection electrode and the second electrode wherein a reading operation of the image pattern of the detecting object is performed based on the determination result by the contact detector.

摘要翻译： 用于读取检测对象的图像图案的图像读取装置包括：检测对象被放置在其上的检测面;具有布置成读取放置在检测面上的检测对象的图像图案的多个传感器的传感器阵列， 第一检测电极，设置在传感器阵列的至少上部，具有检测表面; 设置成与所述第一检测电极电绝缘并间隔开的第二检测电极; 通过层间绝缘膜与第一检测电极相对设置的对电极; 信号电压施加电路，其施加具有向对置电极周期性变化的第一信号波形的信号电压，以通过层间绝缘膜向第一检测电极激发第二信号波形;以及接触检测器，其确定检测对象是否接触 检测表面是基于根据检测对象与第一检测电极和第二电极两者的接触激励到第二检测电极的第三信号波形的特定检测对象，其中检测对象的图像图案的读取操作 基于接触检测器的判定结果进行。