公开(公告)号：US09887173B2

公开(公告)日：2018-02-06

申请号：US14130362

申请日：2012-06-26

Applicant: Michael Guyenot ,  Michael Guenther ,  Thomas Herboth

Inventor： Michael Guyenot ,  Michael Guenther ,  Thomas Herboth

IPC: H01L23/00 ,  H01L23/373

CPC classification number: H01L24/64 ,  H01L23/3735 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/70 ,  H01L24/83 ,  H01L2224/2732 ,  H01L2224/27418 ,  H01L2224/27848 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29012 ,  H01L2224/29015 ,  H01L2224/29023 ,  H01L2224/29036 ,  H01L2224/29139 ,  H01L2224/29298 ,  H01L2224/3003 ,  H01L2224/30051 ,  H01L2224/3012 ,  H01L2224/30142 ,  H01L2224/3016 ,  H01L2224/30181 ,  H01L2224/32014 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/83048 ,  H01L2224/83203 ,  H01L2224/8384 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/07811 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1517 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method for producing a sinter layer connection between a substrate and a chip resulting in an electric and thermal connection therebetween and in reduced mechanical tensions within the chip. The method produces a sinter layer by applying a multitude of sinter elements of a base material forming the sinter layer in structured manner on a contact area of a main surface of a substrate; placing a chip to be joined to the substrate on the sinter elements; and heating and compressing the sinter elements to produce a structured sinter layer connecting the substrate and chip and extending within the contact area, the surface coverage density of the sinter elements on the substrate in a center region of the contact area being greater than the surface coverage density of the sinter elements in an edge region of the contact area, and at least one through channel, extending laterally as to the substrate's main surface being provided towards the contact area's edge. A large-area sinter element is situated in the contact area's center region, and circular sinter elements is situated in a contact area edge region. The sinter elements may also have notches. Also described is a related device.

公开(公告)号：US20140225274A1

公开(公告)日：2014-08-14

申请号：US14130362

申请日：2012-06-26

Applicant: Michael Guyenot ,  Michael Guenther ,  Thomas Herboth

Inventor： Michael Guyenot ,  Michael Guenther ,  Thomas Herboth

IPC: H01L23/00

CPC classification number: H01L24/64 ,  H01L23/3735 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/70 ,  H01L24/83 ,  H01L2224/2732 ,  H01L2224/27418 ,  H01L2224/27848 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29012 ,  H01L2224/29015 ,  H01L2224/29023 ,  H01L2224/29036 ,  H01L2224/29139 ,  H01L2224/29298 ,  H01L2224/3003 ,  H01L2224/30051 ,  H01L2224/3012 ,  H01L2224/30142 ,  H01L2224/3016 ,  H01L2224/30181 ,  H01L2224/32014 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/83048 ,  H01L2224/83203 ,  H01L2224/8384 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/07811 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1517 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method for producing a sinter layer connection between a substrate and a chip resulting in an electric and thermal connection therebetween and in reduced mechanical tensions within the chip. The method produces a sinter layer by applying a multitude of sinter elements of a base material forming the sinter layer in structured manner on a contact area of a main surface of a substrate; placing a chip to be joined to the substrate on the sinter elements; and heating and compressing the sinter elements to produce a structured sinter layer connecting the substrate and chip and extending within the contact area, the surface coverage density of the sinter elements on the substrate in a center region of the contact area being greater than the surface coverage density of the sinter elements in an edge region of the contact area, and at least one through channel, extending laterally as to the substrate's main surface being provided towards the contact area's edge. A large-area sinter element is situated in the contact area's center region, and circular sinter elements is situated in a contact area edge region. The sinter elements may also have notches. Also described is a related device.

Abstract translation: 一种用于在基板和芯片之间产生烧结层连接的方法，其导致其间的电和热连接以及芯片内的减小的机械张力。 该方法通过将形成烧结层的基体材料的大量烧结元件以结构的方式施加到衬底的主表面的接触区域上来产生烧结层; 将要接合到所述基板上的芯片放置在所述烧结元件上; 并且对所述烧结元件进行加热和压缩以产生连接所述衬底和所述芯片并且在所述接触区域内延伸的结构化烧结层，所述接触区域的中心区域中的所述衬底上的所述烧结元件的表面覆盖密度大于所述表面覆盖度 所述接触区域的边缘区域中的所述烧结元件的密度以及至少一个穿过所述衬底主表面横向延伸的贯穿通道朝向所述接触区域的边缘设置。 大面积烧结体位于接触区域的中心区域，圆形烧结体位于接触区边缘区域。 烧结体也可以具有凹口。 还描述了相关设备。