公开(公告)号：US09024299B2

公开(公告)日：2015-05-05

申请号：US12578439

申请日：2009-10-13

申请人： Zilan Li ,  Joshua Tseng ,  Thomas Witters ,  Stefan De Gendt

发明人： Zilan Li ,  Joshua Tseng ,  Thomas Witters ,  Stefan De Gendt

IPC分类号： H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/823842 ,  H01L21/28229 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/785

摘要： A method for manufacturing a dual work function semiconductor device and the device made thereof are disclosed. In one aspect, a method includes providing a gate dielectric layer over a semiconductor substrate. The method further includes forming a metal layer over the gate dielectric layer. The method further includes forming a layer of gate filling material over the metal layer. The method further includes patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first and a second gate stack. The method further includes removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer. The method further includes converting the exposed metal layer into an metal oxide layer. The method further includes reforming the second gate stack with another gate filling material.

摘要翻译： 公开了一种制造双功能半导体器件的方法及其制造的器件。 一方面，一种方法包括在半导体衬底上提供栅介质层。 该方法还包括在栅介电层上形成金属层。 该方法还包括在金属层上形成栅极填充材料层。 该方法还包括图案化栅极介电层，金属层和栅极填充层以形成第一和第二栅极叠层。 该方法还包括仅从第二栅极堆叠去除栅极填充材料，从而暴露下面的金属层。 该方法还包括将暴露的金属层转变成金属氧化物层。 该方法还包括用另一种栅极填充材料重新构造第二栅极堆叠。

公开(公告)号：US20100109095A1

公开(公告)日：2010-05-06

申请号：US12578439

申请日：2009-10-13

申请人： Zilan Li ,  Joshua Tseng ,  Thomas Witters ,  Stefan De Gendt

发明人： Zilan Li ,  Joshua Tseng ,  Thomas Witters ,  Stefan De Gendt

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L21/28

CPC分类号： H01L21/823842 ,  H01L21/28229 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/785

摘要： A method for manufacturing a dual work function semiconductor device and the device made thereof are disclosed. In one aspect, a method includes providing a gate dielectric layer over a semiconductor substrate. The method further includes forming a metal layer over the gate dielectric layer. The method further includes forming a layer of gate filling material over the metal layer. The method further includes patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first and a second gate stack. The method further includes removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer. The method further includes converting the exposed metal layer into an metal oxide layer. The method further includes reforming the second gate stack with another gate filling material.

摘要翻译： 公开了一种制造双功能半导体器件的方法及其制造的器件。 一方面，一种方法包括在半导体衬底上提供栅介质层。 该方法还包括在栅介电层上形成金属层。 该方法还包括在金属层上形成栅极填充材料层。 该方法还包括图案化栅极介电层，金属层和栅极填充层以形成第一和第二栅极叠层。 该方法还包括仅从第二栅极堆叠去除栅极填充材料，从而暴露下面的金属层。 该方法还包括将暴露的金属层转变成金属氧化物层。 该方法还包括用另一种栅极填充材料重新构造第二栅极堆叠。