Abstract:
An optical proximity correction method is provided. A target pattern is provided, and then the target pattern is decomposed to a first pattern and a second pattern. The first pattern and the second pattern are alternately arranged in a dense region. Then, a compensation pattern is provided and it is determined whether the compensation pattern is added into the first pattern to become a first revised pattern, or into the second pattern to become a second revised pattern. Finally, the first revised pattern is output onto a first mask and the second revised pattern is output onto a second mask.
Abstract:
A connector and a connector assembly are provided by the invention. The connector includes a main body formed by a printed circuit board and a plurality of cables. The printed circuit board has a surface conductive trace layer, an inner insulation layer, a ground layer and a surface insulation layer. The surface conductive trace layer has a conductive trace pattern comprising a plurality of contacting-end pattern portions and a plurality of bonding pad portions. The inner insulation layer is located on the surface conductive trace layer. The ground layer is located on the inner insulation layer. The surface insulation layer overlays the ground layer and exposes out a part of the ground layer. The cables are electrically connected to the bonding pad portions of the conductive trace patterns.
Abstract:
A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.
Abstract:
A method for designing a stressor pattern is described, wherein the stressor pattern is used to form S/D regions of a second-type MOS transistor. A first distance between a boundary of the stressor pattern and a first active area of a first-type MOS transistor is derived. If the first distance is less than a safe distance, the stressor pattern is shrunk to make the first distance at least equal to the safe distance.
Abstract:
An optical proximity correction method is provided. A target pattern is provided, and then the target pattern is decomposed to a first pattern and a second pattern. The first pattern and the second pattern are alternately arranged in a dense region. Then, a compensation pattern is provided and it is determined whether the compensation pattern is added into the first pattern to become a first revised pattern, or into the second pattern to become a second revised pattern. Finally, the first revised pattern is output onto a first mask and the second revised pattern is output onto a second mask.
Abstract:
A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.
Abstract:
A connector and a connector assembly are provided by the invention. The connector includes a main body formed by a printed circuit board and a plurality of cables. The printed circuit board has a surface conductive trace layer, an inner insulation layer, a ground layer and a surface insulation layer. The surface conductive trace layer has a conductive trace pattern comprising a plurality of contacting-end pattern portions and a plurality of bonding pad portions. The inner insulation layer is located on the surface conductive trace layer. The ground layer is located on the inner insulation layer. The surface insulation layer overlays the ground layer and exposes out a part of the ground layer. The cables are electrically connected to the bonding pad portions of the conductive trace patterns.