Abstract:
A method of optical proximity correction (OPC) includes the following steps. At first, a layout pattern is provided to a computer system. Subsequently, the layout pattern is classified into at least a first region and at least a second region. Then, several iterations of OPC calculations are performed to the layout pattern, and a total number of OPC calculations performed in the first region is substantially larger than a total number of OPC calculations performed in the second region. Afterwards, a corrected layout pattern is outputted through the computer system onto a mask.
Abstract:
A wind turbine system that can comprise a wind power machine, a compressor, at least one energy accumulator, a dynamo, a pressurized heating system, and a depressurized cooling system; the wind power machine is driven by a wind power to transform wind energy into mechanical energy and to drive a compressor; the compressor pressurizes and stores gas in the energy accumulator; the energy accumulator stores and output the pressurized gas to drive the dynamo; the dynamo can comprise an air motor and an AC generator motor; wherein the air motor is driven by a gas outputted from the energy accumulator, and wherein the air motor drives the AC generator motor to generate electricity; the pressurized heating system can comprise a liquid/gas energy converter transforming hydraulic pressure into a gas pressure; the depressurized cooling system is connected between the energy accumulator and the dynamo.
Abstract:
A mask pattern and a correcting method thereof are provided. The correcting method includes the following steps. An original pattern having a first original contour and a second original contour is provided. The first original contour has a first original corner. The second original contour has a second original corner, which is near the first original corner. The first and second original corners are cut to form a cut pattern. An optical proximity correction (OPC) process is applied to the cut pattern to form the mask pattern.
Abstract:
A method to determine a process window is disclosed. First, a pattern data is provided. Second, a bias set is determined. Then, a resizing procedure is performed on the pattern data in accordance with the bias set to obtain a usable final resized pattern to be a target pattern of changed area. The final resized pattern is consistent with a minimum spacing rule, a contact to poly rule and a contact to metal rule. Accordingly, the target pattern is output.
Abstract:
A method of optical proximity correction (OPC) includes the following steps. At first, a layout pattern is provided to a computer system. Subsequently, the layout pattern is classified into at least a first region and at least a second region. Then, several iterations of OPC calculations are performed to the layout pattern, and a total number of OPC calculations performed in the first region is substantially larger than a total number of OPC calculations performed in the second region. Afterwards, a corrected layout pattern is outputted through the computer system onto a mask.
Abstract:
A method to determine a process window is disclosed. First, a pattern data is provided. Second, a bias set is determined. Then, a resizing procedure is performed on the pattern data in accordance with the bias set to obtain a usable final resized pattern to be a target pattern of changed area. The final resized pattern is consistent with a minimum spacing rule, a contact to poly rule and a contact to metal rule. Accordingly, the target pattern is output.
Abstract:
A mask pattern and a correcting method thereof are provided. The correcting method includes the following steps. An original pattern having a first original contour and a second original contour is provided. The first original contour has a first original corner. The second original contour has a second original corner, which is near the first original corner. The first and second original corners are cut to form a cut pattern. An optical proximity correction (OPC) process is applied to the cut pattern to form the mask pattern.
Abstract:
A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.
Abstract:
A double patterning mask set includes a first mask having a first set of via patterns, and a second mask having a second set of via patterns. The first set of via patterns includes at least two via patterns arranged along a diagonal direction, each of the at least two via patterns has at least a truncated corner. The first set of via patterns and the second set of via patterns are interlacedly arranged along a horizontal direction and a vertical direction.
Abstract:
A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.