公开(公告)号：US20050253705A1

公开(公告)日：2005-11-17

申请号：US11127119

申请日：2005-05-12

申请人： Toshihiko Yamazaki ,  Tohru Hara

发明人： Toshihiko Yamazaki ,  Tohru Hara

IPC分类号： B60R25/01 ,  B60R25/10 ,  B60R25/104 ,  B60R25/24 ,  G08B1/08

CPC分类号： B60R25/1003

摘要： When an alarm switch of a transmitter is given a long press carried out for one or more seconds in a timer-reset condition, a first alarm reversal signal is transmitted simultaneously with the setting (starting) of the timer. If the alarm switch is pressed within the set time of the timer regardless of a press time period, a second alarm reversal signal is transmitted, and the timer is reset. On a receiver side, the activation and deactivation of the alarm is alternately performed upon receipt of each alarm reversal signal.

摘要翻译： 当在定时器复位状态下给发射机的报警开关进行长时间按压一秒或多秒时，第一个报警反转信号与定时器的设置（启动）同时发送。 如果在定时器的设定时间内按下报警开关，而不管按下时间段，则会发送第二个报警反转信号，定时器复位。 在接收机侧，在接收到每个报警反转信号时交替执行报警的激活和停用。

公开(公告)号：US4088514A

公开(公告)日：1978-05-09

申请号：US675491

申请日：1976-04-09

申请人： Tohru Hara ,  Minoru Mihara ,  Nobuyuki Toyoda

发明人： Tohru Hara ,  Minoru Mihara ,  Nobuyuki Toyoda

IPC分类号： C30B19/06 ,  C30B19/08 ,  C30B19/10 ,  H01L21/208

CPC分类号： C30B19/065 ,  C30B19/08 ,  C30B19/10 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628

摘要： Thin epitaxial layers of Group III-V semiconductor materials are grown from solution with improved thickness reproducibility and surface smoothness by a method including the steps of preparing an ideally saturated solution of the semiconductor material in a metal melt preferably by keeping an undersaturated solution in contact with the crystalline semiconductor material at a predetermined temperature, supercooling the saturated solution and then bringing the supercooled solution into contact with a substrate. A growth boat assembly for this method has at least one set of two boats slidably stacked one upon another, wherein the upper boat has a solution reservoir and the lower boat has two depressions respectively for receiving therein the substrate and the crystalline semiconductor material as the source material at the saturation step, arranged such that a solution contained in the reservoir can selectively be contacted with either of the source material and the substrate and isolated from both.

摘要翻译： III-V族半导体材料的薄外延层由具有改善的厚度再现性和表面平滑度的溶液从具有以下步骤的方法生长，所述方法包括以下步骤：优选通过使不饱和溶液与不饱和溶液接触而在金属熔体中制备理想饱和的半导体材料溶液 晶体半导体材料在预定温度下，使饱和溶液过冷却，然后使过冷溶液与基底接触。 用于该方法的生长舟组件具有至少一组两个可滑动地堆叠在一起的两个船，其中上船具有溶液储存器，并且下船具分别具有两个凹陷，用于在其中接收基底和结晶半导体材料作为源 在饱和步骤中的材料被布置为使得包含在储存器中的溶液可以选择性地与源材料和基底中的任一个接触并且与两者隔离。

公开(公告)号：US07295102B2

公开(公告)日：2007-11-13

申请号：US11127119

申请日：2005-05-12

申请人： Toshihiko Yamazaki ,  Tohru Hara

发明人： Toshihiko Yamazaki ,  Tohru Hara

IPC分类号： B60R25/10

CPC分类号： B60R25/1003

摘要： When an alarm switch of a transmitter is given a long press carried out for one or more seconds in a timer-reset condition, a first alarm reversal signal is transmitted simultaneously with the setting (starting) of the timer. If the alarm switch is pressed within the set time of the timer regardless of a press time period, a second alarm reversal signal is transmitted, and the timer is reset. On a receiver side, the activation and deactivation of the alarm is alternately performed upon receipt of each alarm reversal signal.

摘要翻译： 当在定时器复位状态下给发射机的报警开关进行长时间按压一秒或多秒时，第一个报警反转信号与定时器的设置（启动）同时发送。 如果在定时器的设定时间内按下报警开关，而不管按下时间段，则会发送第二个报警反转信号，定时器复位。 在接收机侧，在接收到每个报警反转信号时交替执行报警的激活和停用。

公开(公告)号：US20040211673A1

公开(公告)日：2004-10-28

申请号：US10850946

申请日：2004-05-21

申请人： Morita Chemical Industries Co., Ltd. ,  Tohru Hara

发明人： Tohru Hara ,  Shoichi Ishida ,  Mitsuo Miyamoto ,  Tetsuo Yonezawa

IPC分类号： C25D005/02

CPC分类号： C25D7/123 ,  C25D3/38

摘要： A plating solution containing 10 to 40 wt % of copper hexafluorosilicate. With the use of this plating solution, a copper thin film which has a low film stress and a low resistivity and which strongly (111)-oriented is plating-deposited on the fine pattern portion a copper seed layer, and film peeling caused by deterioration of an adhesion force between an underlying barrier layer and a copper seed layer even in a heat treatment process and in a chemical mechanical polishing (CMP) process after plating deposition is prevented.

摘要翻译： 含有10〜40重量％的六氟硅酸铜的电镀液。 通过使用该电镀液，将铜薄膜应力低，电阻率低（111）取向的铜薄膜电镀在铜晶种层的微细图案部分上，并由劣化引起的膜剥离 即使在热处理工艺中和在电镀沉积后的化学机械抛光（CMP）工艺中也防止了下面的阻挡层和铜籽晶层之间的粘合力。

公开(公告)号：US06246082B1

公开(公告)日：2001-06-12

申请号：US09176508

申请日：1998-10-21

申请人： Shun Mitarai ,  Shigeo Ohnishi ,  Tohru Hara

发明人： Shun Mitarai ,  Shigeo Ohnishi ,  Tohru Hara

IPC分类号： H01L2976

CPC分类号： H01L21/7687 ,  H01L27/1085 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： There is provided a semiconductor memory device with extremely less deterioration of characteristics of dielectric thin film and with high stability. A TaSiN barrier metal layer 13 is formed on a Pt upper electrode 12. This TaSiN barrier metal layer 13 has electrical conductivity and hydrogen-gas blocking property and besides has an amorphous structure stable in high temperature region without crystallizing even during firing for crystallization of an oxide ferroelectric thin film (SBT thin film) 11. Then, hydrogen gas generated during later formation of a second interlayer insulating film 15 is reliably blocked from invading into the oxide ferroelectric thin film 11, by which characteristic deterioration of the oxide ferroelectric thin film 11 due to hydrogen gas is prevented.

摘要翻译： 提供了具有极低的电介质薄膜劣化和高稳定性的半导体存储器件。 在Pt上部电极12上形成TaSiN阻挡金属层13.该TaSiN阻挡金属层13具有导电性和氢气阻断性，而且即使在焙烧期间也具有稳定的高温区域的非晶结构， 氧化物铁电薄膜（SBT薄膜）11.然后，可靠地阻止在后续形成第二层间绝缘膜15期间产生的氢气侵入氧化物铁电薄膜11，由此氧化物强电介质薄膜11的特性劣化 由于氢气被阻止。