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公开(公告)号：US5888299A
公开(公告)日：1999-03-30
申请号：US760963
申请日：1996-12-05
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt These operations are automatically performed.
摘要翻译： 提供一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。 在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，使线退绕以降低 该线材从参考位置到距离WX更高的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单晶体的重量来校正线材的延伸。 此外，将线材保留在熔体上方约十分钟，以由于熔体的热量而提供恒定量的延伸线。这些操作被自动执行。
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公开(公告)号：US6010568A
公开(公告)日：2000-01-04
申请号：US226106
申请日：1999-01-07
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.
摘要翻译： 提供一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。 在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，使线退缩以降低 该线材从参考位置到距离WX更高的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单晶体的重量来校正线材的延伸。 此外，将电线留在熔体上方约十分钟，以由于熔体的热量而使电线的延伸量恒定。 自动执行这些操作。
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公开(公告)号：US4926357A
公开(公告)日：1990-05-15
申请号：US249004
申请日：1988-09-23
CPC分类号： G01B11/08
摘要： An apparatus is used in the production of a monocrystalline rod by Czochralski method and is adapted for measuring the diameter of the monocrystalline rod at the melt surface of the melt by processing image signal derived from an image sensor. The measurement of the diameter is conducted by determining the diameter of the monocrystalline rod at the melt surface by processing the output signal from the image sensor, and multiplying the rod image diameter with a function of the difference between the initial melt surface level and a melt surface corrected in accordance with a change in the temperature in the apparatus chamber or a change in the leval of the electrical power supplied to a heater for heating a crucible.
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公开(公告)号：US5851286A
公开(公告)日：1998-12-22
申请号：US763888
申请日：1996-12-11
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1004 , Y10T117/1008
摘要： A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.
摘要翻译： 公开了采用Czochralski法的晶体拉制装置。 在通过主系统的主控制器控制用于加热坩埚中的材料熔化的加热器的同时操作晶体拉制装置。 当由于某种原因禁用加热状态的维持时，切换信号切换电路的继电器，以便在备用系统的备用控制器的控制下保持加热状态，从而将材料熔体保持在熔融状态。 因此，即使主体系不可能在坩埚内加热材料熔融物，也可以防止材料熔融变得凝固。
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