公开(公告)号：US5851286A

公开(公告)日：1998-12-22

申请号：US763888

申请日：1996-12-11

申请人： Atsushi Ozaki ,  Masahiko Urano ,  Isamu Harada ,  Tomohiro Kakegawa ,  Hideki Nakano

发明人： Atsushi Ozaki ,  Masahiko Urano ,  Isamu Harada ,  Tomohiro Kakegawa ,  Hideki Nakano

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B35/00

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.

摘要翻译： 公开了采用Czochralski法的晶体拉制装置。 在通过主系统的主控制器控制用于加热坩埚中的材料熔化的加热器的同时操作晶体拉制装置。 当由于某种原因禁用加热状态的维持时，切换信号切换电路的继电器，以便在备用系统的备用控制器的控制下保持加热状态，从而将材料熔体保持在熔融状态。 因此，即使主体系不可能在坩埚内加热材料熔融物，也可以防止材料熔融变得凝固。

公开(公告)号：US5888299A

公开(公告)日：1999-03-30

申请号：US760963

申请日：1996-12-05

申请人： Masahiko Urano ,  Atsushi Ozaki ,  Tomohiro Kakegawa ,  Hideki Nakano

发明人： Masahiko Urano ,  Atsushi Ozaki ,  Tomohiro Kakegawa ,  Hideki Nakano

IPC分类号： C30B15/20 ,  C30B15/26 ,  C30B35/00

CPC分类号： C30B15/20 ,  C30B15/26 ,  Y10T117/1004 ,  Y10T117/1008

摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt These operations are automatically performed.

摘要翻译： 提供一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。 在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，使线退绕以降低 该线材从参考位置到距离WX更高的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单晶体的重量来校正线材的延伸。 此外，将线材保留在熔体上方约十分钟，以由于熔体的热量而提供恒定量的延伸线。这些操作被自动执行。

公开(公告)号：US6010568A

公开(公告)日：2000-01-04

申请号：US226106

申请日：1999-01-07

申请人： Masahiko Urano ,  Atsushi Ozaki ,  Tomohiro Kakegawa ,  Hideki Nakano

发明人： Masahiko Urano ,  Atsushi Ozaki ,  Tomohiro Kakegawa ,  Hideki Nakano

IPC分类号： C30B15/20 ,  C30B15/26

CPC分类号： C30B15/20 ,  C30B15/26 ,  Y10T117/1004 ,  Y10T117/1008

摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.

摘要翻译： 提供一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。 在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，使线退缩以降低 该线材从参考位置到距离WX更高的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单晶体的重量来校正线材的延伸。 此外，将电线留在熔体上方约十分钟，以由于熔体的热量而使电线的延伸量恒定。 自动执行这些操作。

公开(公告)号：US5089239A

公开(公告)日：1992-02-18

申请号：US509846

申请日：1990-04-17

申请人： Koji Mizuishi ,  Isamu Harada ,  Yasushi Nakamura ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Yoshihiro Hirano ,  Masahiko Urano

发明人： Koji Mizuishi ,  Isamu Harada ,  Yasushi Nakamura ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Yoshihiro Hirano ,  Masahiko Urano

IPC分类号： C30B15/20 ,  C30B15/30

CPC分类号： C30B15/30 ,  C30B15/20 ,  Y10T117/1072

摘要： A single crystal pulling apparatus having a wire which is used to pull a crystal is provided with a novel wire vibration prevention mechanism. The wire vibration prevention mechanism includes wire restriction devices which restrict the movement of the wire to movement in the vertical direction. The wire restriction devices may be mechanically driven in the horizontal direction in order to center the pulled crystal. The wire restriction devices are driven by pneumatic air cylinders. Use of the wire vibration prevention mechanism avoids the formation of deformed growth of the pulled crystal and thus reduces the occurrence of dislocations in the pulled crystal.

公开(公告)号：US5370077A

公开(公告)日：1994-12-06

申请号：US933375

申请日：1992-08-24

申请人： Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Urano

发明人： Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Urano

IPC分类号： C30B15/20

CPC分类号： C30B15/20 ,  Y10T117/1004 ,  Y10T117/1032

摘要： The present invention provides control of single crystal growth after the recovery from power failure when controlling crystal growth in an automatic mode. A source voltage is supplied to a controller 70 through a no-break power supply 62. At the time of recovery from power failure, the controller continues the automatic operation mode with the same control output as that stored when power failure is detected (84, 85) if the power failure time t is t .ltoreq.t.sub.1 (for example, 1 second), switches the control mode to the manual control mode with the same control output as that stored when the power failure is detected (86, 87) if t.sub.1 t.sub.3.

摘要翻译： 本发明在控制自动模式下的晶体生长的同时，提供从断电恢复之后对单晶生长的控制。 源电压通过无断开电源62提供给控制器70.在电源故障恢复时，控制器以与检测到电源故障时存储的控制输出相同的控制输出继续自动运行模式（84， 85）如果电源故障时间t为t <= = t1（例如1秒），则以与检测到电源故障时存储的控制输出相同的控制输出将控制模式切换到手动控制模式（86,87） 如果t1 t3则向上移动坩埚16（90），将生长的晶体与熔体22分离。

公开(公告)号：US09260796B2

公开(公告)日：2016-02-16

申请号：US12448845

申请日：2008-01-10

申请人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

发明人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

IPC分类号： C30B15/00 ,  C30B15/26 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

CPC分类号： C30B15/26 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

摘要： A method for measuring a distance between a lower end surface of a heat insulating member and a surface of a raw material melt with a reference reflector provided at a lower end of the heat insulating member which is located above the surface of the raw material melt when a silicon single crystal is pulled up by a Czochralski method while a magnetic field is applied to the raw material melt in a crucible is disclosed. The method comprises the steps of contacting a projection made of quartz, silicon or carbon with the surface of the raw material melt, the projection being longer that the reference reflector and having a length corresponding to an initial distance; electrically detecting the contact between the projection and the melt surface, and observing an initial location of a mirror image of the reference reflector by a camera when the distance between the lower end surface of the heat insulating member and the surface of the raw material melt has been adjusted so as to be the initial distance, the mirror image being reflected on the surface of the raw material melt; and while pulling the silicon single crystal, measuring a travel distance of the mirror image from the initial location by the camera and calculating the distance between the lower end surface of the heat insulating member and the surface of the raw material melt from the initial travel distance of the mirror image.

摘要翻译： 一种用于测量绝热构件的下端表面与原料熔体表面之间的距离的方法，所述参考反射器设置在位于原料熔体表面上方的绝热构件的下端， 公开了在坩埚中对原料熔体施加磁场的情况下，利用切克劳斯基法（Czochralski method）将硅单晶拉伸。 该方法包括以下步骤：将由石英，硅或碳制成的突起与原料熔体的表面接触，突起比参考反射体更长，并具有与初始距离相对应的长度; 电检测突起和熔体表面之间的接触，并且当绝热构件的下端表面与原料熔体表面之间的距离具有相机时，通过相机观察参考反射体的镜像的初始位置 被调整为初始距离，镜像在原料熔体的表面上反射; 并且在拉动硅单晶的同时，通过照相机测量镜像与初始位置的移动距离，并从初始行进距离计算绝热构件的下端表面与原料熔体的表面之间的距离 的镜像。

公开(公告)号：US08885915B2

公开(公告)日：2014-11-11

申请号：US13696772

申请日：2011-04-28

申请人： Kosei Sugawara ,  Masahiko Urano ,  Ryoji Hoshi

发明人： Kosei Sugawara ,  Masahiko Urano ,  Ryoji Hoshi

IPC分类号： G06K9/00 ,  C03B29/06 ,  C30B15/26

CPC分类号： C03B29/06 ,  C30B15/26 ,  C30B29/06

摘要： A method for measuring a distance between a lower end surface of a heat shielding member including a criterion reflector inside a concavity on the lower end surface and a surface of a raw material melt includes: a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the raw material melt in a crucible, measuring the distance between the lower end surface of the heat shielding member and the surface of the raw material melt and observing a position of a mirror image of the criterion reflector with a fixed point observation apparatus; and measuring a movement distance of the mirror image with the apparatus and calculating the distance between the lower end surface of the heat shielding member and the surface of the raw material melt from the movement distance of the image and the measured distance.

摘要翻译： 一种用于测量在下端表面的凹部内的标准反射器和原料熔融物的表面之间的包含标准反射镜的下端面之间的距离的方法包括：通过切克劳斯基法以硅单晶拉伸， 将磁场施加到坩埚中的原料熔体，测量隔热构件的下端面与原料熔融物的表面之间的距离，并用固定点观察标准反射体的镜像位置 观察装置; 并测量该镜像与该设备的运动距离，并根据该图像的移动距离和测量距离计算该热屏蔽构件的下端表面与该原料熔体的表面之间的距离。

公开(公告)号：US08085985B2

公开(公告)日：2011-12-27

申请号：US12225918

申请日：2007-01-31

申请人： Masahiko Urano ,  Izumi Fusegawa

发明人： Masahiko Urano ,  Izumi Fusegawa

IPC分类号： G06K9/00

CPC分类号： C30B15/305 ,  C30B15/26 ,  C30B30/04

摘要： The present invention is a method for determining a relative distance between a reference member placed above a melt surface and the melt surface upon pulling a silicon single crystal out of a raw material melt in a crucible by a CZ method characterized by at least: pulling the silicon single crystal applying a magnetic field; taking a picture of a real image of the reference member and a mirror image of the reference member reflected on the melt surface with a detector; processing the picture taken of the real image and the mirror image of the reference member as different pictures by separating the picture taken; and calculating the relative distance between the real image and the mirror image of the reference member from the processed pictures to determine the relative distance between the reference member and the melt surface.

摘要翻译： 本发明是一种确定在熔融表面上方的参考构件与熔融物表面之间的相对距离的方法，该参考构件通过CZ方法从坩埚中的原料熔体拉出硅单晶，其特征在于至少：拉动 硅单晶施加磁场; 用检测器拍摄参考构件的真实图像和在熔体表面上反射的参考构件的镜像; 通过分离所拍摄的图片来处理作为不同图像的实际图像和参考构件的镜像; 以及从经处理的图像计算参考构件的实像和镜像之间的相对距离，以确定参考构件和熔体表面之间的相对距离。

公开(公告)号：US08764900B2

公开(公告)日：2014-07-01

申请号：US12310776

申请日：2007-08-20

申请人： Kiyotaka Takano ,  Masahiko Urano ,  Ryoji Hoshi

发明人： Kiyotaka Takano ,  Masahiko Urano ,  Ryoji Hoshi

IPC分类号： C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B29/06

摘要： The present invention provides an apparatus for producing single crystals according to the Czochralski method, the apparatus including a chamber that can be divided into a plurality of chambers; at least one of the plurality of divided chambers having a circulating coolant passage in which a circulating coolant for cooling the chamber circulates; and measuring means that respectively measure an inlet temperature, an outlet temperature, and a circulating coolant flow rate of the circulating coolant in the circulating coolant passage; the apparatus further including a calculating means that calculates a quantity of heat removed from the chamber and/or a proportion of the quantity of removed heat, from the measured values of the inlet temperature, outlet temperature, and circulating coolant flow rate; and a pulling rate control means that controls a pulling rate of the single crystal based on the resulting quantity of removed heat and/or the resulting proportion of the quantity of removed heat. The invention also provides a method for producing single crystals using the apparatus. Thus, an apparatus and a method for producing single crystals are provided for producing single crystals while easily stabilizing the crystal quality.

摘要翻译： 本发明提供了一种根据切克劳斯基法生产单晶的装置，该装置包括可分为多个室的腔室; 所述多个分隔室中的至少一个具有循环冷却剂通道，其中用于冷却所述室的循环冷却剂循环; 以及测量装置，分别测量循环冷却剂通道中循环冷却剂的入口温度，出口温度和循环冷却剂流量; 该装置还包括从入口温度，出口温度和循环冷却剂流量的测量值计算从室除去的热量和/或去除热量的一部分的计算装置; 以及牵引速度控制装置，其基于所得到的去除热量和/或所得到的除热量的比例来控制单晶的拉伸速率。 本发明还提供使用该装置制备单晶的方法。 因此，提供用于制造单晶的装置和方法，以便容易地稳定晶体质量。

公开(公告)号：US20090249995A1

公开(公告)日：2009-10-08

申请号：US12310776

申请日：2007-08-20

申请人： Kiyotaka Takano ,  Masahiko Urano ,  Ryoji Hoshi

发明人： Kiyotaka Takano ,  Masahiko Urano ,  Ryoji Hoshi

IPC分类号： C30B15/20 ,  C30B15/12

CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B29/06

摘要： The present invention provides an apparatus for producing single crystals according to the Czochralski method, the apparatus including a chamber that can be divided into a plurality of chambers; at least one of the plurality of divided chambers having a circulating coolant passage in which a circulating coolant for cooling the chamber circulates; and measuring means that respectively measure an inlet temperature, an outlet temperature, and a circulating coolant flow rate of the circulating coolant in the circulating coolant passage; the apparatus further including a calculating means that calculates a quantity of heat removed from the chamber and/or a proportion of the quantity of removed heat, from the measured values of the inlet temperature, outlet temperature, and circulating coolant flow rate; and a pulling rate control means that controls a pulling rate of the single crystal based on the resulting quantity of removed heat and/or the resulting proportion of the quantity of removed heat. The invention also provides a method for producing single crystals using the apparatus. Thus, an apparatus and a method for producing single crystals are provided for producing single crystals while easily stabilizing the crystal quality.

摘要翻译： 本发明提供了一种根据切克劳斯基法生产单晶的装置，该装置包括可分为多个室的腔室; 所述多个分隔室中的至少一个具有循环冷却剂通道，其中用于冷却所述室的循环冷却剂循环; 以及测量装置，分别测量循环冷却剂通道中循环冷却剂的入口温度，出口温度和循环冷却剂流量; 该装置还包括从入口温度，出口温度和循环冷却剂流量的测量值计算从室除去的热量和/或去除热量的一部分的计算装置; 以及牵引速度控制装置，其基于所得到的去除热量和/或所得到的除热量的比例来控制单晶的拉伸速率。 本发明还提供使用该装置制备单晶的方法。 因此，提供用于制造单晶的装置和方法，以便容易地稳定晶体质量。