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公开(公告)号：US5888299A
公开(公告)日：1999-03-30
申请号：US760963
申请日：1996-12-05
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt These operations are automatically performed.
摘要翻译： 提供一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。 在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，使线退绕以降低 该线材从参考位置到距离WX更高的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单晶体的重量来校正线材的延伸。 此外，将线材保留在熔体上方约十分钟，以由于熔体的热量而提供恒定量的延伸线。这些操作被自动执行。
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公开(公告)号：US6010568A
公开(公告)日：2000-01-04
申请号：US226106
申请日：1999-01-07
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.
摘要翻译： 提供一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。 在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，使线退缩以降低 该线材从参考位置到距离WX更高的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单晶体的重量来校正线材的延伸。 此外，将电线留在熔体上方约十分钟，以由于熔体的热量而使电线的延伸量恒定。 自动执行这些操作。
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公开(公告)号：US5851286A
公开(公告)日：1998-12-22
申请号：US763888
申请日：1996-12-11
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1004 , Y10T117/1008
摘要： A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.
摘要翻译： 公开了采用Czochralski法的晶体拉制装置。 在通过主系统的主控制器控制用于加热坩埚中的材料熔化的加热器的同时操作晶体拉制装置。 当由于某种原因禁用加热状态的维持时，切换信号切换电路的继电器，以便在备用系统的备用控制器的控制下保持加热状态，从而将材料熔体保持在熔融状态。 因此，即使主体系不可能在坩埚内加热材料熔融物，也可以防止材料熔融变得凝固。
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公开(公告)号：US5370077A
公开(公告)日：1994-12-06
申请号：US933375
申请日：1992-08-24
申请人： Yoshihiro Hirano , Atsushi Ozaki , Masahiko Urano
发明人： Yoshihiro Hirano , Atsushi Ozaki , Masahiko Urano
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , Y10T117/1004 , Y10T117/1032
摘要： The present invention provides control of single crystal growth after the recovery from power failure when controlling crystal growth in an automatic mode. A source voltage is supplied to a controller 70 through a no-break power supply 62. At the time of recovery from power failure, the controller continues the automatic operation mode with the same control output as that stored when power failure is detected (84, 85) if the power failure time t is t .ltoreq.t.sub.1 (for example, 1 second), switches the control mode to the manual control mode with the same control output as that stored when the power failure is detected (86, 87) if t.sub.1 t.sub.3.
摘要翻译： 本发明在控制自动模式下的晶体生长的同时，提供从断电恢复之后对单晶生长的控制。 源电压通过无断开电源62提供给控制器70.在电源故障恢复时，控制器以与检测到电源故障时存储的控制输出相同的控制输出继续自动运行模式（84， 85）如果电源故障时间t为t <= = t1（例如1秒），则以与检测到电源故障时存储的控制输出相同的控制输出将控制模式切换到手动控制模式（86,87） 如果t1
t3则向上移动坩埚16（90），将生长的晶体与熔体22分离。 -
公开(公告)号：US20060174819A1
公开(公告)日：2006-08-10
申请号：US10561865
申请日：2004-05-27
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译： 本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化 拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。 因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上 生长轴可以稳定地生产。
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公开(公告)号：US6027794A
公开(公告)日：2000-02-22
申请号：US999931
申请日：1997-08-08
CPC分类号： C08J5/24 , B29K2301/12 , Y10T428/249927 , Y10T428/249933 , Y10T428/249934 , Y10T428/24994 , Y10T428/249941 , Y10T428/249942 , Y10T428/249949 , Y10T428/24995 , Y10T442/2877 , Y10T442/2885 , Y10T442/2893 , Y10T442/291 , Y10T442/2918 , Y10T442/2951 , Y10T442/659
摘要： Prepregs, comprising the following components [A], [B] and [C], with the component [C] distributed near either or both of the surface layers without being regularly arranged.[A]: Long reinforcing fibers[B]: A matrix resin[C]: Long thermoplastic resin fibersThe prepregs of the present invention are tacky and drapable, and the composite materials obtained by heating and forming the prepregs are high in heat resistance, and very high in impact resistance and inter-layer toughness. Furthermore, the prepregs are easy to produce and high in their latitude in availability of materials.
摘要翻译： 包含以下组分[A]，[B]和[C]的预浸料，组分[C]分布在任何一个或两个表面层附近，而不经常排列。 [A]：长增强纤维[B]：基体树脂[C]：长的热塑性树脂纤维本发明的预浸料是粘性和可悬挂性的，通过加热和形成预浸料获得的复合材料的耐热性高， 并且耐冲击性和层间韧性非常高。 此外，预浸料容易生产，并且在材料可用性方面的纬度高。
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7.发明授权Semiconductor integrated circuit device having selectable operational functions 失效具有可选操作功能的半导体集成电路器件
公开(公告)号：US4985641A
公开(公告)日：1991-01-15
申请号：US315084
申请日：1989-02-24
申请人： Yasuji Nagayama , Atsushi Ozaki
发明人： Yasuji Nagayama , Atsushi Ozaki
IPC分类号： H01L21/822 , G11C11/401 , H01L21/82 , H01L27/04 , H01L27/118 , H03K17/22 , H03K19/173
CPC分类号： H03K17/223 , H01L27/118 , H03K17/22 , H01L2924/0002
摘要： A semiconductor integrated circuit device for setting operational functions dependent on connection of a first bonding pad (20) to a power supply includes switching transistors (Q11, Q40, Q52, Q32) for resetting an input signal line (30) connected to the first bonding pad to a predetermined potential when there is no power supply potential applied to the first bonding pad immediately after turn-on of an operation power supply, at least one inverter (Q3, Q4, Q13, Q14; Q42, Q43; Q50, Q51) responsive to the turn-on of the power supply for the device, for setting and maintaining the potential on the input signal line, and switching transistors (Q12; Q32; Q41; Q52) to be turned on in response to output of the inverter, for cutting off a current path from the power supply through the bonding pad to the input signal line.
摘要翻译： 用于根据第一接合焊盘（20）与电源的连接来设定操作功能的半导体集成电路装置包括用于复位与第一接合（20）连接的输入信号线（30）的开关晶体管（Q11，Q40，Q52，Q32） 至少一个逆变器（Q3，Q4，Q13，Q14; Q42，Q43; Q50，Q51），在操作电源接通后立即施加到第一焊盘上的电源电位， 响应于所述装置的电源的接通，用于设置和维持所述输入信号线上的电位，以及响应于所述逆变器的输出而导通的开关晶体管（Q12; Q32; Q41; Q52） 用于切断从电源通过接合焊盘到输入信号线的电流路径。
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公开(公告)号：US07384477B2
公开(公告)日：2008-06-10
申请号：US10560581
申请日：2004-05-28
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering a pulling rate V, and thus the single crystal including a desired defect region can be produced effectively for a short time.
摘要翻译： 本发明是一种通过CZ法从室内的原料熔融物中拉出单晶的单晶的制造方法，其中，当生长单晶时，拉伸速度定义为V，晶体的温度梯度 在生长单晶时被定义为G，晶体的温度梯度G通过改变至少两个或更多个拉伸条件来控制。 因此，提供了一种单晶的制造方法，其中当通过CZ法生长单晶时，可以在不降低拉伸速度V的情况下控制V / G，从而可以产生包括所需缺陷区的单晶 有效地在短时间内。
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公开(公告)号：US06888236B2
公开(公告)日：2005-05-03
申请号：US09926464
申请日：2001-03-07
申请人： Yasuji Hiramatsu , Yasutaka Ito , Atsushi Ozaki
发明人： Yasuji Hiramatsu , Yasutaka Ito , Atsushi Ozaki
IPC分类号： C04B35/581 , C04B35/64 , H01L23/15 , H01L23/053 , C22C29/02 , H01B3/12 , H01L29/40
CPC分类号： H01L21/6831 , C04B35/581 , C04B35/64 , H01L23/15 , H01L2924/0002 , Y10T279/23 , H01L2924/00
摘要： A ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, can be used as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside or on the surface thereof has been sintered such that a fractured section thereof exhibits intergranular fracture.
摘要翻译： 可以使用具有高断裂韧性值，优异的热冲击电阻率，高导热性和优异的升温和降温特性的半导体制造/检查装置的陶瓷基板作为热板，静电卡盘，晶片探针和 类似。 用于半导体制造/检查装置的陶瓷基板，其内部或表面上形成有导体，其断裂部分呈现晶间断裂。
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公开(公告)号：US5584930A
公开(公告)日：1996-12-17
申请号：US487507
申请日：1995-06-07
申请人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
发明人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
CPC分类号： G01G9/00 , C30B15/28 , G01B11/105 , Y10T117/1004
摘要： A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising: calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wall from the calculated pulled-up weight of the grown single crystal, and then either correcting the value of the ingot diameter actually measured by the optical sensor in response to the descent amount of the melt surface level or raising the crucible by an amount equal to the descent amount of the surface level.
摘要翻译： 一种用于测量在单晶拉制装置中拉起的单晶锭的直径的方法，包括：计算上拉单晶的重量，从计算的拉伸单元计算熔融表面相对于坩埚壁的下降量， 生长的单晶的重量，然后响应于熔体表面水平的下降量或者将坩埚升高等于表面下降量的量来校正由光学传感器实际测量的锭直径的值 水平。
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