公开(公告)号：US08698254B2

公开(公告)日：2014-04-15

申请号：US13499333

申请日：2010-09-29

申请人： Katsuhiro Tomioka ,  Takashi Fukui ,  Tomotaka Tanaka

发明人： Katsuhiro Tomioka ,  Takashi Fukui ,  Tomotaka Tanaka

IPC分类号： H01L27/088

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/303 ,  C23C16/45525 ,  C30B25/005 ,  C30B25/186 ,  C30B29/40 ,  H01L21/02373 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/267 ,  H01L29/66356 ,  H01L29/7391

摘要： A tunnel field effect transistor is capable of operating at a low subthreshold and is able to be manufactured easily. The tunnel field effect transistor includes a group IV semiconductor substrate having a (111) surface and doped so as to have a first conductivity type, a group III-V compound semiconductor nanowire arranged on the (111) surface and containing a first region connected to the (111) surface and a second region doped so as to have a second conductivity type, a source electrode connected to the group IV semiconductor substrate; a drain electrode connected to the second region, and a gate electrode for applying an electric field to an interface between the (111) surface and the group III-V compound semiconductor nanowire, or an interface between the first region and the second region.

摘要翻译： 隧道场效应晶体管能够以低亚阈值运行，并且能够容易地制造。 隧道场效应晶体管包括具有（111）表面并掺杂以具有第一导电类型的IV族半导体衬底，布置在（111）表面上的III-V族化合物半导体纳米线，并且包含连接到 （111）表面和掺杂以具有第二导电类型的第二区域，连接到IV族半导体衬底的源电极; 连接到第二区域的漏电极和用于向（111）表面和III-V族化合物半导体纳米线之间的界面或第一区域和第二区域之间的界面施加电场的栅电极。

公开(公告)号：US20120187376A1

公开(公告)日：2012-07-26

申请号：US13499333

申请日：2010-09-29

申请人： Katsuhiro Tomioka ,  Takashi Fukui ,  Tomotaka Tanaka

发明人： Katsuhiro Tomioka ,  Takashi Fukui ,  Tomotaka Tanaka

IPC分类号： H01L29/775 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/303 ,  C23C16/45525 ,  C30B25/005 ,  C30B25/186 ,  C30B29/40 ,  H01L21/02373 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/267 ,  H01L29/66356 ,  H01L29/7391

摘要： A tunnel field effect transistor is capable of operating at a low subthreshold and is able to be manufactured easily. The tunnel field effect transistor includes a group IV semiconductor substrate having a (111) surface and doped so as to have a first conductivity type, a group III-V compound semiconductor nanowire arranged on the (111) surface and containing a first region connected to the (111) surface and a second region doped so as to have a second conductivity type, a source electrode connected to the group IV semiconductor substrate; a drain electrode connected to the second region, and a gate electrode for applying an electric field to an interface between the (111) surface and the group III-V compound semiconductor nanowire, or an interface between the first region and the second region.

摘要翻译： 隧道场效应晶体管能够以低亚阈值运行，并且能够容易地制造。 隧道场效应晶体管包括具有（111）表面并掺杂以具有第一导电类型的IV族半导体衬底，布置在（111）表面上的III-V族化合物半导体纳米线，并且包含连接到 （111）表面和掺杂以具有第二导电类型的第二区域，连接到IV族半导体衬底的源电极; 连接到第二区域的漏电极和用于向（111）表面和III-V族化合物半导体纳米线之间的界面或第一区域和第二区域之间的界面施加电场的栅电极。