公开(公告)号：US20060222182A1

公开(公告)日：2006-10-05

申请号：US11375783

申请日：2006-03-14

申请人： Shinichi Nakaishi ,  Toshihiro Kido

发明人： Shinichi Nakaishi ,  Toshihiro Kido

IPC分类号： H04R5/00

CPC分类号： H04S7/302 ,  H04R2499/13 ,  H04S3/002

摘要： A plurality of speakers are installed at different positions in space and, of multichannel signals, only a center signal component is output from a speaker(s) mounted in at least one seat located within the space. The center signal component is output not only from the speaker(s) mounted in at least one seat, but also from a center speaker installed within the space. Further, the center signal component is reproduced by delaying it and outputting the delayed signal component from the speaker(s) mounted in at least one seat, thereby providing the precedence effect.

摘要翻译： 多个扬声器安装在空间中的不同位置，并且在多声道信号中，仅从安装在位于该空间内的至少一个座中的扬声器输出中心信号分量。 中心信号分量不仅从安装在至少一个座椅中的扬声器输出，而且还从安装在该空间内的中置扬声器输出。 此外，通过延迟中心信号分量并且从安装在至少一个座中的扬声器输出延迟的信号分量来再现，从而提供优先效果。

公开(公告)号：US20070099409A1

公开(公告)日：2007-05-03

申请号：US11610327

申请日：2006-12-13

申请人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

发明人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

IPC分类号： H01L21/44

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

摘要翻译： 半导体器件包括至少一个半导体结构，其具有形成在半导体衬底上的多个外部连接电极。 在半导体结构的一侧设置有绝缘片部件。 上部互连具有连接焊盘部分，其布置在与上部互连件对应并且连接到半导体结构的外部连接电极的绝缘片部件上。

公开(公告)号：US07445964B2

公开(公告)日：2008-11-04

申请号：US11610327

申请日：2006-12-13

申请人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

发明人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

IPC分类号： H01L21/00

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

摘要翻译： 半导体器件包括至少一个半导体结构，其具有形成在半导体衬底上的多个外部连接电极。 在半导体结构的一侧设置有绝缘片部件。 上部互连具有连接焊盘部分，其布置在与上部互连件对应并且连接到半导体结构的外部连接电极的绝缘片部件上。

公开(公告)号：US07183639B2

公开(公告)日：2007-02-27

申请号：US10916917

申请日：2004-08-12

申请人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

发明人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

IPC分类号： H01L23/48

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

摘要翻译： 半导体器件包括至少一个半导体结构，其具有形成在半导体衬底上的多个外部连接电极。 在半导体结构的一侧设置有绝缘片部件。 上部互连具有连接焊盘部分，其布置在与上部互连件对应并且连接到半导体结构的外部连接电极的绝缘片部件上。

公开(公告)号：US20050051886A1

公开(公告)日：2005-03-10

申请号：US10916917

申请日：2004-08-12

申请人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

发明人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

IPC分类号： H01L21/56 ,  H01L23/16 ,  H01L23/31 ,  H01L23/48

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

摘要翻译： 半导体器件包括至少一个半导体结构，其具有形成在半导体衬底上的多个外部连接电极。 在半导体结构的一侧设置有绝缘片部件。 上部互连具有连接焊盘部分，其布置在与上部互连件对应并且连接到半导体结构的外部连接电极的绝缘片部件上。