PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION
    1.
    发明申请
    PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION 有权
    图案形成工艺,化学稳定性电阻组合物和电阻修饰组合物

    公开(公告)号:US20110033799A1

    公开(公告)日:2011-02-10

    申请号:US12850266

    申请日:2010-08-04

    摘要: A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.

    摘要翻译: 通过(1)将第一正性抗蚀剂组合物涂布在基材上,烘烤,图案曝光,PEB和显影以形成包括大面积特征的第一正性抗蚀剂图案,(2)涂覆抗蚀剂改性组合物,形成图案,所述抗蚀剂改性组合物包含 碱性含氮化合物和加热以改性第一抗蚀剂图案,和(3)在其上涂覆第二正性抗蚀剂组合物,图案曝光和显影以形成第二抗蚀剂图案。 第一抗蚀剂图案中的大面积特征在第二图案形成之后具有至少50%的膜保持性。

    Lactone-containing compound, polymer, resist composition, and patterning process
    2.
    发明授权
    Lactone-containing compound, polymer, resist composition, and patterning process 有权
    含内酯的化合物,聚合物,抗蚀剂组合物和图案化工艺

    公开(公告)号:US07871752B2

    公开(公告)日:2011-01-18

    申请号:US11878759

    申请日:2007-07-26

    IPC分类号: G03F7/004 G03F7/30

    摘要: Lactone-containing compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic hydrocarbon ring, R4 is H or CO2R5, R5 is a monovalent hydrocarbon group, W is CH2, O or S, and k1 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, pattern edge roughness, pattern density dependency and exposure margin.

    摘要翻译: 具有式(1)的含内酯的化合物是新的,其中R 1是H,F,甲基或三氟甲基,R 2和R 3是一价烃基,或者R 2和R 3可以一起形成脂族烃环,R 4是H或CO 2 R 5,R 5是 一价烃基,W是CH 2,O或S,k 1是0或1.它们可用作产生对辐射透明的聚合物的单体; 500nm。 包含作为基础树脂的聚合物的辐射敏感性抗蚀剂组合物表现出优异的性能,包括分辨率,图案边缘粗糙度,图案密度依赖性和曝光余量。

    Positive resist compositions and patterning process
    3.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号:US07727704B2

    公开(公告)日:2010-06-01

    申请号:US11773706

    申请日:2007-07-05

    摘要: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

    摘要翻译: 在包含(A)在酸的作用下变得可溶于碱性显影剂的树脂组分和(B)光酸产生剂的正型抗蚀剂组合物中,组分(A)是式(1)的聚合物,其中R 1是H, 甲基或三氟甲基,R2和R3是烷基,R4是一价烃基,X1是O,S或CH2CH2,X2是O,S,CH2或CH2CH2,n是1或2,a1,a2,c,d1和d2 各自为0至小于1,b为0.01至小于1,a1 + a2 + b + c + d1 + d2 = 1。 当通过ArF光刻处理时,抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

    Positive resist compositions and patterning process
    4.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号:US07691561B2

    公开(公告)日:2010-04-06

    申请号:US11773656

    申请日:2007-07-05

    摘要: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

    摘要翻译: 在包含(A)在酸的作用下变得可溶于碱性显影剂的树脂组分和(B)光酸产生剂的正型抗蚀剂组合物中,组分(A)是式(1)的聚合物,其中R 1是H, 甲基或三氟甲基,R 2和R 3是烷基,R 4是一价烃基,X 1是O,S或CH 2 CH 2,X 2是O,S,CH 2或CH 2 CH 2,n是1或2,a和b各自为0.01至少 1,c,d1和d2各自为0至小于1,a + b + c + d1 + d2 = 1。 当通过ArF光刻处理时,抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    5.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    积极的组合和绘图过程

    公开(公告)号:US20100062372A1

    公开(公告)日:2010-03-11

    申请号:US12553410

    申请日:2009-09-03

    IPC分类号: G03F7/004 G03F7/20

    摘要: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by at least one of formulae (1-1) to (1-3) wherein R1 is H, methyl or trifluoromethyl, X is a single bond or methylene, Y is hydroxyl or hydroxymethyl, and m is 0, 1 or 2. The composition is improved in resolution when processed by lithography.

    摘要翻译: 正型抗蚀剂组合物包含(A)在酸的作用下变得可溶于碱性显影剂的树脂组分和(B)酸产生剂。 树脂(A)是包含由式(1-1)〜(1-3)中至少一个表示的非离去羟基的重复单元的聚合物,其中R 1是H,甲基或三氟甲基,X是单键 或亚甲基,Y是羟基或羟甲基,m是0,1或2.当通过光刻处理时,组合物的分辨率提高。

    Positive resist composition and patterning process
    10.
    发明申请
    Positive resist composition and patterning process 有权
    正抗蚀剂组成和图案化工艺

    公开(公告)号:US20080124652A1

    公开(公告)日:2008-05-29

    申请号:US11984614

    申请日:2007-11-20

    IPC分类号: G03F7/20 G03C1/73

    摘要: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]-dodecane structure, hydroxyadamantane units, monocyclic lactone units, and carboxylic acid units. The acid generator (B) is a specific sulfonium salt compound.

    摘要翻译: 正型抗蚀剂组合物包含(A)在酸作用下变得可溶于碱性显影剂的树脂组分和(B)酸产生剂。 树脂(A)是包含具有疏水性四环[4.4.0.1 2,5,7,10-] - 十二烷结构的叔烷基保护基单元的聚合物,羟基金刚烷 单体,单环内酯单元和羧酸单元。 酸产生剂(B)是特定的锍盐化合物。