公开(公告)号：US08382903B2

公开(公告)日：2013-02-26

申请号：US11543086

申请日：2006-10-05

Applicant: Tsuneyuki Okabe ,  Shigeyuki Okura ,  Kazuo Ujiie

Inventor： Tsuneyuki Okabe ,  Shigeyuki Okura ,  Kazuo Ujiie

IPC: C23C16/00

CPC classification number: C23C16/4486

Abstract: A vaporizer for generating a process gas from a liquid material includes a container defining a process space of the vaporizer, and an injector having a spray port configured to spray the liquid material in an atomized state downward in the container. A lower block is disposed below the spray port inside the container such that a run-up space for the atomized liquid material is defined between the spray port and the lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the lower block. First and second heaters are respectively provided to the container and the lower block, and configured to heat the atomized liquid material flowing through the annular space to generate the process gas. A gas delivery passage is connected to the container to output the process gas from the annular space.

Abstract translation: 用于从液体材料产生处理气体的蒸发器包括限定蒸发器的处理空间的容器和具有喷射口的喷射器，该喷射口被配置为以雾化状态将容器内的液体材料向下喷射。 下部块设置在容器内的喷雾口下方，使得雾化液体材料的起始空间被限定在喷射口和下部块之间，并且与起动空间连续的环形空间被限定在 容器的内表面和下块。 第一和第二加热器分别设置在容器和下部块体上，并且构造成加热流过环形空间的雾化液体材料以产生处理气体。 气体输送通道连接到容器以从环形空间输出处理气体。

公开(公告)号：US08197600B2

公开(公告)日：2012-06-12

申请号：US12076765

申请日：2008-03-21

Applicant: Ken Nakao ,  Hitoshi Kato ,  Tsuneyuki Okabe ,  Shigeyuki Okura

Inventor： Ken Nakao ,  Hitoshi Kato ,  Tsuneyuki Okabe ,  Shigeyuki Okura

IPC: C23C16/00 ,  C23C16/448

CPC classification number: C23C16/4486

Abstract: A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas.

Abstract translation: 用于从液体材料产生处理气体的蒸发器包括具有中空内部空间并设置在容器内的喷射器的喷雾口下方的热交换下部块。 雾化的液体材料的起始空间被限定在喷射口和热交换下部块之间，并且在容器的内表面和热交换器下部之间限定与起动空间连续的环形空间 块。 内部加热器设置在热交换下部块的内部空间中，并且包括由编织的碳纤维束形成并密封在陶瓷外壳中的碳线。 内部加热器被配置为加热流过环形空间的雾化液体材料以产生处理气体。

公开(公告)号：US07954452B2

公开(公告)日：2011-06-07

申请号：US11878274

申请日：2007-07-23

Applicant: Tsuneyuki Okabe ,  Hitoshi Kato

Inventor： Tsuneyuki Okabe ,  Hitoshi Kato

IPC: C23C16/00 ,  C23C16/52 ,  C23C16/455 ,  H01L21/306

CPC classification number: C23C16/4405 ,  H01L21/3185

Abstract: A method for using a film formation apparatus for a semiconductor process forms a first atmosphere inside an upstream gas passage between a gas supply source of a halogen acidic gas and a flow rate controller. The first atmosphere is set for the halogen acidic gas to have an average molecular weight of 20 or more and 23 or less. Further, the using method supplies the halogen acidic gas from the gas supply source through the upstream gas passage having the first atmosphere thus formed and the flow rate controller, thereby supplying a cleaning gas containing the halogen acidic gas into a reaction chamber of the film formation apparatus. A by-product film deposited on an inner surface of the reaction chamber is etched and removed by use of the cleaning gas thus supplied.

Abstract translation: 使用半导体工艺的成膜装置的方法在卤素酸性气体的气体供给源和流量控制器之间的上游气体通道内部形成第一气氛。 卤素酸性气体的第一个气氛是平均分子量为20以上且23以下。 此外，使用方法通过具有如此形成的第一气氛的上游气体通道和流量控制器从气体供给源供给卤素酸性气体，从而将含有卤素酸性气体的清洗气体供给到膜形成反应室 仪器。 沉积在反应室的内表面上的副产物膜通过使用如此提供的清洁气体被蚀刻除去。

公开(公告)号：US07682843B2

公开(公告)日：2010-03-23

申请号：US11817104

申请日：2006-06-28

Applicant: Shuji Moriya ,  Tsuneyuki Okabe ,  Hiroyuki Ebi ,  Tetsuo Shimizu ,  Hitoshi Kitagawa

Inventor： Shuji Moriya ,  Tsuneyuki Okabe ,  Hiroyuki Ebi ,  Tetsuo Shimizu ,  Hitoshi Kitagawa

IPC: H01L21/66

CPC classification number: G05D7/0658 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/52

Abstract: Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.

Abstract translation: 基于处理基板时实际发生的热虹吸效应的零点偏移被准确地检测并适当地校正。 半导体制造系统包括用于将气体供给到热处理单元（110）中的气体供给通道（210），MFC（240），用于将用于检测气体供应通道的气体流量的检测单元的输出电压与 与设定的流量对应的设定电压，将气体供给通路的气体流量控制为设定的流量，以及控制单元（300）。 控制单元通过在基板被处理之前至少用于处理基板的气体来替换MFC中的气体，在设置在上游的阀（230,250）的状态下检测来自MFC的输出电压， 关闭MFC的下游并将检测到的输出电压存储在存储单元中，基于来自存储在存储单元中的MFC的输出电压来校正与用于处理衬底的气体的流量对应的设定电压 处理基板的时间，并将校正的设定电压设置在MFC中。

公开(公告)号：US07510884B2

公开(公告)日：2009-03-31

申请号：US10564558

申请日：2004-07-14

Applicant: Tsuneyuki Okabe ,  Kengo Kaneko

Inventor： Tsuneyuki Okabe ,  Kengo Kaneko

IPC: H01L21/00

CPC classification number: G05D7/0635 ,  G01F1/68 ,  G01F15/024 ,  G01F25/0007

Abstract: A semiconductor manufacturing apparatus according to the present invention comprises: a treating unit that treats a substrate to manufacture thereon a semiconductor device; a fluid supplying channel for supplying a fluid required for a treatment of the substrate to the treating unit; a set voltage outputting unit that outputs a set voltage corresponding to a set flow volume of the fluid; a massflow controller disposed on the fluid supplying channel, that controls a flow volume of the fluid based on the set voltage; a first shut-off valve disposed on the fluid supplying channel on an upstream side of the massflow controller; and a second shut-off valve disposed on the fluid supplying channel on a downstream side of the massflow controller. The massflow controller includes: a detecting unit that detects an actual flow volume of the fluid and outputs a corresponding detected voltage; a comparing unit that compares the set voltage with the detected voltage to output an operation signal; and a flow volume adjusting unit that adjusts the flow volume of the fluid based on the operation signal. A storing unit is provided, that stores the detected voltage outputted from the detecting unit of the massflow controller, when the first and the second shut-off valves are closed. A set voltage correcting unit is provided, that corrects the set voltage based on the detected voltage stored in the storing unit, in such a manner that a drift of the detected voltage is compensated when an actual flow volume of the fluid is zero.

Abstract translation: 根据本发明的半导体制造装置包括：处理单元，其处理衬底以在其上制造半导体器件; 用于将处理基板所需的流体供给到处理单元的流体供给通道; 设定电压输出单元，输出与流体的设定流量对应的设定电压; 设置在流体供给通道上的质量流量控制器，其基于设定电压来控制流体的流量; 第一截止阀，设置在所述质量流量控制器的上游侧的所述流体供给通道上; 以及第二截止阀，其设置在所述质量流量控制器的下游侧的所述流体供给通道上。 质量流量控制器包括：检测单元，其检测流体的实际流量并输出相应的检测电压; 比较单元，其将设定电压与所检测的电压进行比较，以输出操作信号; 以及流量调节单元，其基于操作信号调节流体的流量。 当第一和第二截止阀关闭时，提供存储从质量流量控制器的检测单元输出的检测电压的存储单元。 提供一种设定电压校正单元，其以基于存储在存储单元中的检测电压来校正设定电压，使得当流体的实际流量为零时检测电压的漂移被补偿。

公开(公告)号：US07343926B2

公开(公告)日：2008-03-18

申请号：US11812051

申请日：2007-06-14

Applicant: Tsuneyuki Okabe ,  Shigeyuki Okura ,  Hiroki Doi ,  Minoru Ito ,  Yoji Mori ,  Yasunori Nishimura

Inventor： Tsuneyuki Okabe ,  Shigeyuki Okura ,  Hiroki Doi ,  Minoru Ito ,  Yoji Mori ,  Yasunori Nishimura

IPC: F16K51/00

CPC classification number: F16K27/003 ,  F16K7/14 ,  F16K31/06 ,  H01L21/31691 ,  Y10T137/4259 ,  Y10T137/87885

Abstract: A liquid raw material supply unit for a vaporizer is adapted to supply a liquid raw material to the vaporizer that vaporizes the liquid raw material. The unit comprises: a manifold internally formed with a flow passage; and a plurality of fluid control valves mounted on the manifold, wherein the plurality of fluid control valves includes: a liquid raw material control valve for controlling supply of the liquid raw material to the flow passage; a cleaning solution control valve for controlling supply of a cleaning solution to the flow passage; a purge gas control valve for controlling supply of a purge gas to the flow passage; and a first introducing control valve connectable to the vaporizer for controlling supply of a fluid from the flow passage to the vaporizer, the purge gas control valve, the cleaning solution control valve, the liquid raw material control valve, and the first introducing control valve being mounted on the manifold in this order from an upstream side of the manifold, wherein the flow passage is connected to valve ports of the plurality of control valves respectively, the valve ports communicating with valve openings of the respective control valves, and the flow passage is configured to allow the purge gas supplied from the purge gas control valve to directly flow in the valve ports of the cleaning solution control valve and the liquid raw material control valve placed downstream from the purge gas control valve.

Abstract translation: 用于蒸发器的液体原料供应单元适于将液体原料供应到蒸发液体原料的蒸发器。 该单元包括：内部形成有流动通道的歧管; 以及安装在所述歧管上的多个流体控制阀，其中，所述多个流体控制阀包括：液体原料控制阀，用于控制所述液体原料供给所述流路; 清洗液控制阀，用于控制向所述流路供给清洗液; 吹扫气体控制阀，用于控制向所述流动通道供应净化气体; 以及可连接到蒸发器的第一引入控制阀，用于控制从流动通道到蒸发器的流体供应，吹扫气体控制阀，清洗溶液控制阀，液体原料控制阀和第一引入控制阀是 从歧管的上游侧依次安装在歧管上，其中流路分别连接到多个控制阀的阀口，与各个控制阀的阀口连通的阀口，流路是 被配置为允许从净化气体控制阀提供的净化气体直接流入清洗液控制阀的阀口和设置在净化气体控制阀下游的液体原料控制阀。

公开(公告)号：US20050087299A1

公开(公告)日：2005-04-28

申请号：US10959575

申请日：2004-10-07

Applicant: Tsuneyuki Okabe ,  Makoto Takadou

Inventor： Tsuneyuki Okabe ,  Makoto Takadou

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/318 ,  C23F1/00

CPC classification number: C23C16/455 ,  C23C16/345 ,  C23C16/4401 ,  H01L21/3185

Abstract: Shutoff valves are placed in parts of the process gas supply lines at positions near the processing vessel. A main purge gas supply line branches into branch purge gas supply lines, each of which is provided with an orifice called sonic nozzle. The branch purge gas supply lines are connected to parts of the process gas supply lines extending between the shutoff valves and the processing vessel. The ratio P1/P2, where P1 is primary pressure on the primary side of the orifice and P2 is secondary pressure on the secondary side of the orifice, is controlled to be not less than a predetermined value, for example, two, thereby, the purge gas can always be supplied at equal flow rates into the process gas supply lines. The total flow rate of the purge gas is controlled by a mass flow controller placed in the main purge gas supply line.

Abstract translation: 截止阀在处理容器附近的位置放置在工艺气体供应管线的一部分中。 主吹扫气体供应管线分支到分支吹扫气体供应管线，其中每个供应管线设置有称为声波喷嘴的孔口。 分支吹扫气体供应管线连接到在截止阀和处理容器之间延伸的处理气体供应管线的部分。 其中P1是孔口初级侧的一次压力，P2是孔口次级侧上的二次压力的比率P1 / P2被控制为不小于预定值，例如两个， 始终可以以相等的流量将吹扫气体提供给工艺气体供应管线。 净化气体的总流量由置于主吹扫气体供应管线中的质量流量控制器控制。

公开(公告)号：US06382238B2

公开(公告)日：2002-05-07

申请号：US09801896

申请日：2001-03-09

Applicant: Ken Ishii ,  Tsuneyuki Okabe ,  Yuji Kawano ,  Michio Yamaji

Inventor： Ken Ishii ,  Tsuneyuki Okabe ,  Yuji Kawano ,  Michio Yamaji

IPC: F17D106

CPC classification number: F16K27/003 ,  Y10T137/5283 ,  Y10T137/87885

Abstract: Lower members of each of lines A, B, C, D, E, P are mounted on a subbase panel 3 with screws, upper members 11, 12, 13, 14, 15, 16, 17, 18, 19 of each line are mounted on the lower members with screws, and the subbase panels 3 is mounted on a single main base panel 2. Channel connecting element 50 is removable upward.

Abstract translation: 线A，B，C，D，E，P中的每一个的下部构件用螺钉安装在底座面板3上，每条线的上部构件11,12,13,14,15,16,17,18,19 用螺钉安装在下部构件上，底座面板3安装在单个主底板2上。通道连接元件50可向上移动。

公开(公告)号：US20120222751A1

公开(公告)日：2012-09-06

申请号：US13409327

申请日：2012-03-01

Applicant: Tsuneyuki OKABE

Inventor： Tsuneyuki OKABE

IPC: F17D1/04

CPC classification number: H01L21/67253 ,  C23C16/45557 ,  C23C16/45561 ,  H01L21/67017 ,  Y02E60/321 ,  Y02E60/34 ,  Y10T137/0396 ,  Y10T137/2599 ,  Y10T137/7039 ,  Y10T137/7043 ,  Y10T137/776 ,  Y10T137/7761 ,  Y10T137/7762

Abstract: A disclosed gas supplying apparatus includes a pressure controller that reduces a primary pressure thereby providing a secondary pressure greater than a process pressure at which a predetermined process is performed and less than the atmospheric pressure in a secondary pipe; a pressure sensor that measures a pressure in the secondary pipe; a first open/close valve provided in the secondary pipe; an open/close valve controller that opens or closes the first open/close valve; a pressure comparator that compares the pressure measured by the pressure sensor in the secondary pipe with a first set pressure that is greater than the process pressure by a predetermined pressure; and a controller that outputs a signal to the open/close valve controller thereby closing the first open/close valve, when the pressure comparator determines that the pressure in the secondary pipe is less than the first set pressure.

Abstract translation: 所公开的气体供给装置包括压力控制器，该压力控制器降低主压力，从而提供大于进行预定处理的过程压力并且小于次级管道中的大气压力的二次压力; 压力传感器，其测量次级管道中的压力; 设置在副管道中的第一开/关阀; 打开或关闭第一开/关阀的打开/关闭阀控制器; 压力比较器，其将由次级管道中的压力传感器测量的压力与大于过程压力的预定压力的第一设定压力进行比较; 以及控制器，当所述压力比较器确定所述次级管中的压力小于所述第一设定压力时，将所述信号输出到所述开/关阀控制器，从而关闭所述第一开/关阀。

公开(公告)号：US20090293908A1

公开(公告)日：2009-12-03

申请号：US12431232

申请日：2009-04-28

Applicant: Hitoshi KATOH ,  Tsuneyuki Okabe ,  Kohichi Orito ,  Takashi Chiba

Inventor： Hitoshi KATOH ,  Tsuneyuki Okabe ,  Kohichi Orito ,  Takashi Chiba

IPC: C03C23/00 ,  B08B3/00

CPC classification number: C03C23/0075

Abstract: A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

Abstract translation: 一种方法用于去除沉积在选自由用于半导体工艺的垂直热处理装置的反应管，晶片舟和隔热圆柱体组成的组中的石英构件上的金属污染物。 该方法包括获得未连接到垂直热处理装置的石英构件; 然后，使用稀释的氢氟酸进行稀释的氢氟酸清洗来清洗石英部件; 然后，使用净化水进行清洗石英部件的第一净化水清洗; 然后用盐酸进行清洗石英部件的盐酸清洗; 然后进行使用净化水清洗石英部件的第二净化水清洗。