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    FILM FORMATION APPARATUS FOR SEMICONDUCTOR PROCESS
    1.
    发明申请
    FILM FORMATION APPARATUS FOR SEMICONDUCTOR PROCESS 审中-公开
    薄膜形成装置用于半导体工艺

    公开(公告)号：US20110048326A1

    公开(公告)日：2011-03-03

    申请号：US12871342

    申请日：2010-08-30

    Applicant: Hitoshi KATO ,  Kohichi Orito

    Inventor： Hitoshi KATO ,  Kohichi Orito

    IPC: H01L21/46

    CPC classification number: C23C16/455 ,  C23C16/402 ,  C23C16/4554 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/76224

    Abstract: A film formation apparatus for a semiconductor process for forming a thin film on a target object by use of first and second reactive gases includes a vacuum container, an exhaust system, a rotary table configured to place the target object thereon, a rotating mechanism configured to rotate the rotary table, and a temperature adjusting mechanism configured to set the target object to a temperature at which the first reactive gas is condensed. Inside the vacuum container, a first reactive gas supply section configured to adsorb a condensed substance of the first reactive gas onto the target object, a vaporizing section configured to partly vaporize the condensed substance, and a second reactive gas supply section configured to cause the second reactive gas to react with the condensed substance are disposed in this order in a rotational direction of the rotary table.

    Abstract translation: 用于通过使用第一和第二反应气体在目标物体上形成薄膜的半导体工艺的成膜装置包括真空容器，排气系统，被配置为将目标物体放置在其上的旋转台，旋转机构，其构造成 旋转所述旋转台，以及温度调节机构，其被构造成将所述目标物体设定为所述第一反应气体被冷凝的温度。 在真空容器内部，第一反应气体供给部构造成将第一反应气体的冷凝物质吸附到目标物体上，构成为将冷凝物部分蒸发的蒸发部，以及第二反应气体供给部， 与冷凝物质反应的活性气体按照旋转台的旋转方向依次配置。

    Film deposition apparatus
    2.
    发明授权
    Film deposition apparatus 有权
    膜沉积装置

    公开(公告)号：US08721790B2

    公开(公告)日：2014-05-13

    申请号：US12963673

    申请日：2010-12-09

    Applicant: Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

    Inventor： Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

    IPC: C23C16/453 ,  C23C16/455 ,  C23C16/458 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

    CPC classification number: C23C16/45551 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45578

    Abstract: A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

    Abstract translation: 一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间， 可能流经第二空间而不是第一空间。

    SUBSTRATE PROCESS APPARATUS, SUBSTRATE PROCESS METHOD, AND COMPUTER READABLE STORAGE MEDIUM
    3.
    发明申请
    SUBSTRATE PROCESS APPARATUS, SUBSTRATE PROCESS METHOD, AND COMPUTER READABLE STORAGE MEDIUM 有权
    基板工艺设备，基板工艺方法和计算机可读存储介质

    公开(公告)号：US20110100489A1

    公开(公告)日：2011-05-05

    申请号：US12916667

    申请日：2010-11-01

    Applicant: Kohichi Orito ,  Manabu Honma ,  Tatsuya Tamura

    Inventor： Kohichi Orito ,  Manabu Honma ,  Tatsuya Tamura

    IPC: F17D1/00

    CPC classification number: H01L21/67253 ,  C23C16/45502 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45587 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T137/8376

    Abstract: A vacuum chamber is evacuated through a first evacuation passage provided with a first valve and a second evacuation passage provided with a second valve. An opening degree of the first valve is adjusted so that a pressure in the vacuum chamber becomes substantially equal to a process pressure P; an opening degree of a butterfly valve further provided in the second evacuation passage is adjusted to substantially equal to a set value determined by a table in order to set flow rates of gases to be evacuated through the first evacuation passage and the second evacuation passage to be substantially equal to corresponding set values determined by the recipe; and an opening degree of the second valve is adjusted so that a measurement value of a differential pressure gauge further provided in the second evacuation passage becomes substantially equal to a differential pressure written in the table.

    Abstract translation: 通过设置有第一阀的第一抽空通道和设置有第二阀的第二抽空通道抽真空室。 调节第一阀的开度，使得真空室中的压力基本上等于处理压力P; 进一步设置在第二排气通道中的蝶阀的开度被调整为基本上等于由工作台确定的设定值，以便将通过第一抽空通道和第二抽空通道排出的气体的流量设定为 基本上等于由配方确定的相应设定值; 并且调节第二阀的开度，使得进一步设置在第二排气通道中的差压计的测量值变得基本上等于写在工作台中的压差。

    Substrate process apparatus, substrate process method, and computer readable storage medium
    5.
    发明授权
    Substrate process apparatus, substrate process method, and computer readable storage medium 有权
    基板处理装置，基板处理方法和计算机可读存储介质

    公开(公告)号：US08746170B2

    公开(公告)日：2014-06-10

    申请号：US12916667

    申请日：2010-11-01

    Applicant: Kohichi Orito ,  Manabu Honma ,  Tatsuya Tamura

    Inventor： Kohichi Orito ,  Manabu Honma ,  Tatsuya Tamura

    IPC: C23C16/52 ,  C23C16/458 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

    CPC classification number: H01L21/67253 ,  C23C16/45502 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45587 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T137/8376

    Abstract: A vacuum chamber is evacuated through a first evacuation passage provided with a first valve and a second evacuation passage provided with a second valve. An opening degree of the first valve is adjusted so that a pressure in the vacuum chamber becomes substantially equal to a process pressure P; an opening degree of a butterfly valve further provided in the second evacuation passage is adjusted to substantially equal to a set value determined by a table in order to set flow rates of gases to be evacuated through the first evacuation passage and the second evacuation passage to be substantially equal to corresponding set values determined by the recipe; and an opening degree of the second valve is adjusted so that a measurement value of a differential pressure gauge further provided in the second evacuation passage becomes substantially equal to a differential pressure written in the table.

    Abstract translation: 通过设置有第一阀的第一抽空通道和设置有第二阀的第二抽空通道抽真空室。 调节第一阀的开度，使得真空室中的压力基本上等于处理压力P; 进一步设置在第二排气通道中的蝶阀的开度被调整为基本上等于由工作台确定的设定值，以便将通过第一抽空通道和第二抽空通道排出的气体的流量设定为 基本上等于由配方确定的相应设定值; 并且调节第二阀的开度，使得进一步设置在第二排气通道中的差压计的测量值变得基本上等于写在工作台中的压差。

    REMOVAL OF METAL CONTAMINANT DEPOSITED ON QUARTZ MEMBER OF VERTICAL HEAT PROCESSING APPARATUS
    6.
    发明申请
    REMOVAL OF METAL CONTAMINANT DEPOSITED ON QUARTZ MEMBER OF VERTICAL HEAT PROCESSING APPARATUS 失效
    在垂直加热装置的QUARTZ成员上去除金属污染物

    公开(公告)号：US20090293908A1

    公开(公告)日：2009-12-03

    申请号：US12431232

    申请日：2009-04-28

    Applicant: Hitoshi KATOH ,  Tsuneyuki Okabe ,  Kohichi Orito ,  Takashi Chiba

    Inventor： Hitoshi KATOH ,  Tsuneyuki Okabe ,  Kohichi Orito ,  Takashi Chiba

    IPC: C03C23/00 ,  B08B3/00

    CPC classification number: C03C23/0075

    Abstract: A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

    Abstract translation: 一种方法用于去除沉积在选自由用于半导体工艺的垂直热处理装置的反应管，晶片舟和隔热圆柱体组成的组中的石英构件上的金属污染物。 该方法包括获得未连接到垂直热处理装置的石英构件; 然后，使用稀释的氢氟酸进行稀释的氢氟酸清洗来清洗石英部件; 然后，使用净化水进行清洗石英部件的第一净化水清洗; 然后用盐酸进行清洗石英部件的盐酸清洗; 然后进行使用净化水清洗石英部件的第二净化水清洗。

    FILM DEPOSITION APPARATUS
    8.
    发明申请
    FILM DEPOSITION APPARATUS 有权
    胶片沉积装置

    公开(公告)号：US20110139074A1

    公开(公告)日：2011-06-16

    申请号：US12963673

    申请日：2010-12-09

    Applicant: HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

    Inventor： HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

    IPC: C23C16/458 ,  C23C16/00

    CPC classification number: C23C16/45551 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45578

    Abstract: A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

    Abstract translation: 一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间， 可能流经第二空间而不是第一空间。

    Removal of metal contaminant deposited on quartz member of vertical heat processing apparatus
    9.
    发明授权
    Removal of metal contaminant deposited on quartz member of vertical heat processing apparatus 失效
    去除沉积在垂直热处理设备的石英构件上的金属污染物

    公开(公告)号：US08298341B2

    公开(公告)日：2012-10-30

    申请号：US12431232

    申请日：2009-04-28

    Applicant: Hitoshi Katoh ,  Tsuneyuki Okabe ,  Kohichi Orito ,  Takashi Chiba

    Inventor： Hitoshi Katoh ,  Tsuneyuki Okabe ,  Kohichi Orito ,  Takashi Chiba

    IPC: C23G1/02

    CPC classification number: C03C23/0075

    Abstract: A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

    Abstract translation: 一种方法用于去除沉积在选自由用于半导体工艺的垂直热处理装置的反应管，晶片舟和隔热圆柱体组成的组中的石英构件上的金属污染物。 该方法包括获得未连接到垂直热处理装置的石英构件; 然后，使用稀释的氢氟酸进行稀释的氢氟酸清洗来清洗石英部件; 然后，使用净化水进行清洗石英部件的第一净化水清洗; 然后用盐酸进行清洗石英部件的盐酸清洗; 然后进行使用净化水清洗石英部件的第二净化水清洗。

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