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    INSERTED REFLECTIVE SHIELD TO IMPROVE QUANTUM EFFICIENCY OF IMAGE SENSORS
    2.
    发明申请
    INSERTED REFLECTIVE SHIELD TO IMPROVE QUANTUM EFFICIENCY OF IMAGE SENSORS 有权
    插入反射屏幕，以提高图像传感器的量子效率

    公开(公告)号：US20110254115A1

    公开(公告)日：2011-10-20

    申请号：US12761736

    申请日：2010-04-16

    申请人： Yu-Hao SHIH ,  Szu-Ying CHEN ,  Hsing-Lung CHEN ,  Jen-Cheng LIU ,  Dun-Nian YAUNG ,  Volume CHIEN

    发明人： Yu-Hao SHIH ,  Szu-Ying CHEN ,  Hsing-Lung CHEN ,  Jen-Cheng LIU ,  Dun-Nian YAUNG ,  Volume CHIEN

    IPC分类号： H01L31/0232 ,  H01L21/302

    CPC分类号： H01L27/14685 ,  H01L27/14629 ,  H01L27/1464 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/18

    摘要： The structures of reflective shields and methods of making such structures described enable reflection of light that has not be absorbed by photodiodes in image sensor devices and increase quantum efficiency of the photodiodes. Such structures can be applied (or used) for any image sensors to improve image quality. Such structures are particular useful for image sensors with smaller pixel sizes and for long-wavelength light (or rays), whose absorption length (or depth) could be insufficient, especially for backside illumination (BSI) devices. The reflective shields could double, or more than double, the absorption depth for light passing through the image sensors and getting reflected back to the photodiodes. Concave-shaped reflective shields have the additional advantage of directing reflected light toward the image sensors.

    摘要翻译： 反射屏蔽的结构和制造这样的结构的方法使得能够反射未被图像传感器装置中的光电二极管吸收的光并提高光电二极管的量子效率。 这种结构可以应用于（或用于）任何图像传感器，以提高图像质量。 这种结构对于具有较小像素尺寸的图像传感器和对于其吸收长度（或深度）可能不足的长波长光（或光线）特别有用，尤其对于背面照明（BSI）装置。 反射屏蔽可以使通过图像传感器的光的吸收深度增加一倍或两倍以上，并被反射回到光电二极管。 凹形反射屏蔽具有将反射光引向图像传感器的额外优点。

    IMAGE DEVICE AND METHODS OF FORMING THE SAME
    3.
    发明申请
    IMAGE DEVICE AND METHODS OF FORMING THE SAME 有权
    图像装置及其形成方法

    公开(公告)号：US20130292750A1

    公开(公告)日：2013-11-07

    申请号：US13595494

    申请日：2012-08-27

    申请人： Szu-Ying CHEN ,  Min-Feng KAO ,  Jen-Cheng LIU ,  Feng-Chi HUNG ,  Dun-Nian YAUNG

    发明人： Szu-Ying CHEN ,  Min-Feng KAO ,  Jen-Cheng LIU ,  Feng-Chi HUNG ,  Dun-Nian YAUNG

    IPC分类号： H01L31/02

    CPC分类号： H01L27/1463 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689

    摘要： A method of forming of an image sensor device includes an isolation well formed in a pixel region of a substrate. The isolation well has a first conductivity type. A gate stack is formed over the isolation well on the substrate. A mask layer is formed over the isolation well and covering at least a majority portion of the gate stack. A plurality of dopants is implanted in the pixel region, using the gate stack and the mask layer as masks, to form doped isolation features. The plurality of dopants has the first conductivity type. A source region and a drain region are formed on opposite sides of the gate stack in the substrate. The source region and the drain region have a second conductivity type opposite to the A conductivity.

    摘要翻译： 形成图像传感器装置的方法包括在衬底的像素区域中形成的隔离阱。 隔离阱具有第一导电类型。 栅极堆叠形成在衬底上的隔离阱上。 掩模层形成在隔离阱上并覆盖栅极堆叠的至少大部分部分。 使用栅极堆叠和掩模层作为掩模将多个掺杂剂注入到像素区域中，以形成掺杂的隔离特征。 多个掺杂剂具有第一导电类型。 源极区域和漏极区域形成在衬底中的栅极堆叠的相对侧上。 源极区域和漏极区域具有与A电导率相反的第二导电类型。

    BACK SIDE ILLUMINATED IMAGE SENSOR WITH IMPROVED STRESS IMMUNITY
    4.
    发明申请
    BACK SIDE ILLUMINATED IMAGE SENSOR WITH IMPROVED STRESS IMMUNITY 有权
    具有改进的应力免疫的背面照明图像传感器

    公开(公告)号：US20120280348A1

    公开(公告)日：2012-11-08

    申请号：US13099092

    申请日：2011-05-02

    申请人： Keng-Yu CHOU ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Pao-Tung CHEN ,  Wen-De WANG ,  Chun-Chieh CHUANG ,  Min-Feng KAO

    发明人： Keng-Yu CHOU ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Pao-Tung CHEN ,  Wen-De WANG ,  Chun-Chieh CHUANG ,  Min-Feng KAO

    IPC分类号： H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14636

    摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

    摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有与第一侧相对的前侧和后侧的基板。 基板具有像素区域和外围区域。 图像传感器装置包括设置在基板的像素区域中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括设置在周边区域中的参考像素。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层。 图像传感器装置包括在基板的背面上形成的膜。 该膜导致基材经受拉伸应力。 图像传感器装置包括设置在膜上的辐射阻挡装置。

    DUAL SHALLOW TRENCH ISOLATION AND RELATED APPLICATIONS
    6.
    发明申请
    DUAL SHALLOW TRENCH ISOLATION AND RELATED APPLICATIONS 有权
    双壁分离和相关应用

    公开(公告)号：US20100252870A1

    公开(公告)日：2010-10-07

    申请号：US12751126

    申请日：2010-03-31

    申请人： Jeng-Shyan LIN ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Chun-Chieh CHUANG ,  Volume CHIEN

    发明人： Jeng-Shyan LIN ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Chun-Chieh CHUANG ,  Volume CHIEN

    IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L21/76

    CPC分类号： H01L27/1463 ,  H01L21/76229 ,  H01L21/823878 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14689

    摘要： Embodiments of the invention relate to dual shallow trench isolations (STI). In various embodiments related to CMOS Image Sensor (CIS) technologies, the dual STI refers to one STI structure in the pixel region and another STI structure in the periphery or logic region. The depth of each STI structure depends on the need and/or isolation tolerance of devices in each region. In an embodiment, the pixel region uses NMOS devices and the STI in this region is shallower than that of in the periphery region that includes both NMOS and PMOS device having different P- and N-wells and that desire more protective isolation (i.e., deeper STI). Depending on implementations, different numbers of masks (e.g., two, three) are used to generate the dual STI, and are disclosed in various method embodiments.

    摘要翻译： 本发明的实施例涉及双重浅沟槽隔离（STI）。 在涉及CMOS图像传感器（CIS）技术的各种实施例中，双STI是指像素区域中的一个STI结构和外围或逻辑区域中的另一个STI结构。 每个STI结构的深度取决于每个区域中器件的需要和/或隔离容差。 在一个实施例中，像素区域使用NMOS器件，并且该区域中的STI比包括具有不同P阱和N阱的NMOS和PMOS器件的外围区域中的STI浅，并且需要更多的保护隔离（即，更深的 STI）。 根据实施方案，使用不同数量的掩模（例如，两个，三个）来产生双STI，并且在各种方法实施例中公开。

    METHOD OF FABRICATING A BACKSIDE ILLUMINATED IMAGE SENSOR
    8.
    发明申请
    METHOD OF FABRICATING A BACKSIDE ILLUMINATED IMAGE SENSOR 有权
    制造背面照明图像传感器的方法

    公开(公告)号：US20100273289A1

    公开(公告)日：2010-10-28

    申请号：US12762442

    申请日：2010-04-19

    申请人： Jhy-Ming HUNG ,  Jen-Cheng LIU ,  Dun-Nian YAUNG

    发明人： Jhy-Ming HUNG ,  Jen-Cheng LIU ,  Dun-Nian YAUNG

    IPC分类号： H01L21/768

    CPC分类号： H01L27/14689 ,  H01L27/1462 ,  H01L27/1464

    摘要： A method of forming a backside illuminated image sensor using an SOI substrate including a handle substrate, an insulator formed on the handle substrate, and a semiconductor layer formed on the insulator. A sensor element is formed on the semiconductor layer, a dielectric layer is formed overlying the semiconductor layer and the sensor element; and an interconnection structure is formed in the dielectric layer to electrically connect the sensor element. A carrier substrate is forming the dielectric layer. After flipping, the handle substrate is removed to expose the insulator layer.

    摘要翻译： 使用包括手柄基板的SOI基板，形成在手柄基板上的绝缘体和形成在绝缘体上的半导体层形成背面照明图像传感器的方法。 传感器元件形成在半导体层上，形成在半导体层和传感器元件之上的电介质层; 并且在电介质层中形成互连结构以电连接传感器元件。 载体衬底正在形成电介质层。 翻转后，去除手柄基板以露出绝缘体层。

    Method for Making Multi-Step Photodiode Junction Structure for Backside Illuminated Sensor
    10.
    发明申请
    Method for Making Multi-Step Photodiode Junction Structure for Backside Illuminated Sensor 有权
    制造背光照明传感器多步光电二极管结结构的方法

    公开(公告)号：US20080079030A1

    公开(公告)日：2008-04-03

    申请号：US11537265

    申请日：2006-09-29

    申请人： Tzu-Hsuan HSU ,  Dun-Nian YAUNG

    发明人： Tzu-Hsuan HSU ,  Dun-Nian YAUNG

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14645 ,  H01L27/1464

    摘要： A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel.

    摘要翻译： 提供制造背面照明传感器的方法。 提供衬底并且在衬底上执行高能离子注入以注入第一掺杂区域。 在衬底上形成层，并在衬底上执行自对准高能离子注入，以在第一掺杂区域上注入第二掺杂区域。 第一和第二掺杂区域的组合厚度大于衬底的厚度的50％，并且衬底的背表面与第一和第二掺杂区域之间的距离小于衬底厚度的50％。 以这种方式，形成放大的光感测区域，通过该放大的光感测区域从表面的后表面产生的电子可以容易地到达像素。