摘要:
The present invention concerns a method for the generation of a transparent conductive oxide display coating (TCO display layer), in particular a transparent conductive oxide display coating as a transparent contact for flat panel displays and the like. The TCO display layer is generated by depositing zinc oxide and additionally aluminium, indium, gallium, boron, nitrogen, phosphorous, chlorine, fluorine or antimony or a combination thereof, with the process atmosphere containing hydrogen. These TCO layers can be realized in a particularly simple and cost-effective way compared to ITO. The properties of the inventive TCO layers are nearly as good as those for ITO, regarding high transmittance and low resistance.
摘要:
A method for forming a thin-film transistor gate insulating layer over a substrate disposed in a processing chamber is provided. The method includes: introducing a processing gas for producing a plasma in the processing chamber; heating the substrate to a substrate processing temperature of between 50 and 350° C.; and depositing silicon oxide, silicon oxynitride, or silicon nitride over the heated substrate by sputtering a target assembly at a medium frequency.
摘要:
The invention relates to an infrared radiation reflecting layer system for panes of glass and similar, the properties of said layer system being maintained even after heat treatment, for example, for bending or hardening the panes of glass. Silver is used as the infrared radiation reflecting layer. A combination of NiCrOx and Zn(Al)Ox is used as a lower-layer blocker for the silver. Also, a stoichiometric layer is also used as a pre-blocker layer. A specific work point is selected for a first dielectric layer of TiOxNy. Harmonisation of the thickness of the layers and the degrees of oxidation of NiCrOx and ZnAlOx as double lower-layer blockers and the work point of the TiOxNy-base layer are important for the temperability of the coating.
摘要:
The invention relates to a silver low-E coating for glass which is temperable and can be applied by means of sputter processes onto the glass. The individual layers of the coating are cost-effective standard materials. One embodiment of the invention for example is comprised of a glass substrate, an Si3N4 layer disposed thereon of a thickness of approximately 15 nm, a TiO2 layer of 15 nm thickness on the Si3N4 layer, a 12.5 nm thick Ag layer on the TiO2 layer, a NiCrOx layer of approximately 5 nm thickness on the Ag layer and a terminating 45 nm thick Si3N4 layer.
摘要翻译:本发明涉及一种用于玻璃的银低-E涂层,其是可回火的并且可以通过溅射工艺施加到玻璃上。 涂层的各个层是具有成本效益的标准材料。 本发明的一个实施例包括玻璃基板,厚度约为15nm的Si 3 N 4层,Si 3 N 4层上的15nm厚的TiO 2层,TiO 2层上的12.5nm厚的Ag层, 在Ag层上具有大约5nm厚度的NiCrOx层和终止的45nm厚的Si 3 N 4层。
摘要:
The present invention concerns a method for the generation of a transparent conductive oxide coating (TCO layer), in particular a transparent conductive oxide coating as a transparent contact for solar cells, flat panel displays and the like. The TCO layer is generated by depositing zinc oxide and additionally aluminium, indium, gallium, boron, nitrogen, phosphorous, chlorine, fluorine or antimony or a combination thereof, with the process atmosphere containing hydrogen. These TCO layers can be realized in a particularly simple and cost-effective way compared to ITO. The properties of the inventive TCO layers are nearly as good as those for ITO, regarding high transmittance and low resistance.
摘要:
The invention relates to a silver low-E coating for glass which is temperable and can be applied by means of sputter processes onto the glass. The individual layers of the coating are cost-effective standard materials. One embodiment of the invention for example is comprised of a glass substrate, an Si3N4 layer disposed thereon of a thickness of approximately 15 nm, a TiO2 layer of 15 nm thickness on the Si3N4 layer, a 12.5 nm thick Ag layer on the TiO2 layer, a NiCrOx layer of approximately 5 nm thickness on the Ag layer and a terminating 45 nm thick Si3N4 layer.
摘要翻译:本发明涉及一种用于玻璃的银低-E涂层,其是可回火的并且可以通过溅射工艺施加到玻璃上。 涂层的各个层是具有成本效益的标准材料。 本发明的一个实施方案例如包括玻璃基板,其上设置有大约15nm的厚度的Si 3 N 4 N 4层,TiO 2 在Si 3 N 4 N层上具有15nm厚度的层,TiO 2层上的12.5nm厚的Ag层, 在Ag层上具有约5nm厚度的NiCrO x层,以及终止的45nm厚的Si 3 N 4 N 4层。