公开(公告)号：US20090195865A1

公开(公告)日：2009-08-06

申请号：US12280151

申请日：2007-02-15

申请人： Gerd Kleideiter ,  Michael Geisler ,  Udo Schreiber ,  Sven Schramm

发明人： Gerd Kleideiter ,  Michael Geisler ,  Udo Schreiber ,  Sven Schramm

IPC分类号： G02B5/26 ,  G02B1/10 ,  C23C14/10 ,  C23C14/14

CPC分类号： C03C17/36 ,  C03C17/3618 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3644 ,  C03C17/3652 ,  C03C17/366 ,  C03C17/3681

摘要： The invention relates to an infrared radiation reflecting layer system for panes of glass and similar, the properties of said layer system being maintained even after heat treatment, for example, for bending or hardening the panes of glass. Silver is used as the infrared radiation reflecting layer. A combination of NiCrOx and Zn(Al)Ox is used as a lower-layer blocker for the silver. Also, a stoichiometric layer is also used as a pre-blocker layer. A specific work point is selected for a first dielectric layer of TiOxNy. Harmonisation of the thickness of the layers and the degrees of oxidation of NiCrOx and ZnAlOx as double lower-layer blockers and the work point of the TiOxNy-base layer are important for the temperability of the coating.

摘要翻译： 本发明涉及一种用于玻璃等的红外线辐射反射层系统，即使在热处理之后，例如用于弯曲或硬化玻璃板也保持所述层系的性质。 银被用作红外线辐射反射层。 使用NiCrOx和Zn（Al）Ox的组合作为银的下层阻滞剂。 此外，化学计量层也用作预阻挡层。 选择TiOxNy的第一介电层的具体工作点。 NiCrOx和ZnAlOx作为双层下层阻滞剂的层厚度和氧化度的协调和TiOxNy基层的工作点对于涂层的回火性是重要的。

公开(公告)号：US08133589B2

公开(公告)日：2012-03-13

申请号：US11769934

申请日：2007-06-28

申请人： Matthias List ,  Gerd Kleideiter ,  Udo Schreiber ,  Sven Schramm

发明人： Matthias List ,  Gerd Kleideiter ,  Udo Schreiber ,  Sven Schramm

IPC分类号： B32B9/00

CPC分类号： C03C17/36 ,  C03C17/3618 ,  C03C17/3626 ,  C03C17/3644 ,  C03C17/3652 ,  C03C17/366 ,  C03C2218/154

摘要： The invention relates to a silver low-E coating for glass which is temperable and can be applied by means of sputter processes onto the glass. The individual layers of the coating are cost-effective standard materials. One embodiment of the invention for example is comprised of a glass substrate, an Si3N4 layer disposed thereon of a thickness of approximately 15 nm, a TiO2 layer of 15 nm thickness on the Si3N4 layer, a 12.5 nm thick Ag layer on the TiO2 layer, a NiCrOx layer of approximately 5 nm thickness on the Ag layer and a terminating 45 nm thick Si3N4 layer.

摘要翻译： 本发明涉及一种用于玻璃的银低-E涂层，其是可回火的并且可以通过溅射工艺施加到玻璃上。 涂层的各个层是具有成本效益的标准材料。 本发明的一个实施例包括玻璃基板，厚度约为15nm的Si 3 N 4层，Si 3 N 4层上的15nm厚的TiO 2层，TiO 2层上的12.5nm厚的Ag层， 在Ag层上具有大约5nm厚度的NiCrOx层和终止的45nm厚的Si 3 N 4层。

公开(公告)号：US20080220261A1

公开(公告)日：2008-09-11

申请号：US11769934

申请日：2007-06-28

申请人： Matthias List ,  Gerd Kleideiter ,  Udo Schreiber ,  Sven Schramm

发明人： Matthias List ,  Gerd Kleideiter ,  Udo Schreiber ,  Sven Schramm

IPC分类号： B32B17/06 ,  C23C14/00

CPC分类号： C03C17/36 ,  C03C17/3618 ,  C03C17/3626 ,  C03C17/3644 ,  C03C17/3652 ,  C03C17/366 ,  C03C2218/154

摘要： The invention relates to a silver low-E coating for glass which is temperable and can be applied by means of sputter processes onto the glass. The individual layers of the coating are cost-effective standard materials. One embodiment of the invention for example is comprised of a glass substrate, an Si3N4 layer disposed thereon of a thickness of approximately 15 nm, a TiO2 layer of 15 nm thickness on the Si3N4 layer, a 12.5 nm thick Ag layer on the TiO2 layer, a NiCrOx layer of approximately 5 nm thickness on the Ag layer and a terminating 45 nm thick Si3N4 layer.

摘要翻译： 本发明涉及一种用于玻璃的银低-E涂层，其是可回火的并且可以通过溅射工艺施加到玻璃上。 涂层的各个层是具有成本效益的标准材料。 本发明的一个实施方案例如包括玻璃基板，其上设置有大约15nm的厚度的Si 3 N 4 N 4层，TiO 2 在Si 3 N 4 N层上具有15nm厚度的层，TiO 2层上的12.5nm厚的Ag层， 在Ag层上具有约5nm厚度的NiCrO x层，以及终止的45nm厚的Si 3 N 4 N 4层。

公开(公告)号：US20090199901A1

公开(公告)日：2009-08-13

申请号：US12028457

申请日：2008-02-08

申请人： Roland Trassl ,  Sven Schramm ,  Winfried Wolke ,  Jan Catoir

发明人： Roland Trassl ,  Sven Schramm ,  Winfried Wolke ,  Jan Catoir

IPC分类号： H01L31/00 ,  H01L21/3105

CPC分类号： H01L31/02168 ,  H01L31/18 ,  Y02E10/50

摘要： The present invention refers to a method of producing a photovoltaic device having at least one semiconductor unit comprising the following steps: a cleaning of at least one surface of the semiconductor unit by etching; drying of the at least one surface of the semiconductor unit in a substantially oxygen-free or oxygen-depleted environment; and depositing of a passivation layer on the at least one surface as well as to a device for carrying out such a method and to photovoltaic devices produced by this method.

摘要翻译： 本发明涉及一种制造具有至少一个半导体单元的光伏器件的方法，包括以下步骤：通过蚀刻来清洁半导体单元的至少一个表面; 在基本上无氧或耗氧的环境中干燥半导体单元的至少一个表面; 以及在所述至少一个表面上沉积钝化层以及用于执行这种方法的设备以及通过该方法制造的光伏器件。

公开(公告)号：US08709158B2

公开(公告)日：2014-04-29

申请号：US12860619

申请日：2010-08-20

申请人： Sven Schramm ,  Susanne Schläfer

发明人： Sven Schramm ,  Susanne Schläfer

IPC分类号： C23C16/00

CPC分类号： C23C14/541 ,  C23C14/16 ,  C23C16/463

摘要： Thermal management of film deposition processes. In one aspect, a deposition system includes a vacuum chamber defining an evacuated interior volume, a deposition source disposed within the interior volume, a substrate holder disposed within the interior volume and arranged to hold a substrate with a first surface of the substrate facing the deposition source and a second surface of the substrate disposed facing away from the deposition source, and a heat sink disposed to have a first side of the heat sink in radiative thermal contact with the second surface of the substrate held by the substrate holder, the first side of the heat sink comprising a collection of features having a longitudinal dimension that is four or more times larger than a lateral dimension between the features, the features thereby dimensioned and aligned to reflect, multiple times in succession, radiative thermal emissions of the second surface of the substrate.

摘要翻译： 薄膜沉积工艺的热管理。 在一个方面，沉积系统包括限定抽真空的内部容积的真空室，设置在内部容积内的沉积源，设置在内部空间内的衬底保持器，并且被布置成保持衬底，衬底的第一表面面向沉积物 所述基板和所述基板的第二表面设置为背离所述沉积源，以及散热器，其布置成具有与由所述基板保持器保持的所述基板的所述第二表面辐射热接触的所述散热器的第一侧，所述第一侧 所述散热器包括具有纵向尺寸为所述特征之间的横向尺寸的四倍或更多倍的特征的集合，所述特征由此尺寸和对齐以反复多次连续地反射第二表面的辐射热发射 底物。

公开(公告)号：US20080302653A1

公开(公告)日：2008-12-11

申请号：US12045992

申请日：2008-03-11

申请人： Roland Trassl ,  Sven Schramm ,  Thomas Hegemann

发明人： Roland Trassl ,  Sven Schramm ,  Thomas Hegemann

IPC分类号： C23C14/34 ,  C23C14/56

CPC分类号： C23C14/541 ,  C23C14/0652 ,  C23C14/56 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a method for producing an anti-reflection and/or passivation coating for solar cells. The method may include the steps of providing a silicon wafer in a deposition chamber, pre-heating said silicon wafer to a temperature above 400° C. and deposition of a hydrogen containing anti-reflection and/or passivation coating by a sputter process. A coating apparatus is also provided for producing solar cells, especially anti-reflection and/or passivation coatings on Si wafers, comprising a first vacuum chamber, a second vacuum chamber and conveying means for transporting a substrate through said first and second vacuum chambers. The first vacuum chamber comprising at least one infrared radiation heater with a heater filament that has a temperature between 1800° C. and 3000° C. The second vacuum chamber comprising sputter means for vaporization of a target as well as a gas inlet for introducing a reactive gas including hydrogen.

摘要翻译： 本发明涉及一种用于生产用于太阳能电池的抗反射和/或钝化涂层的方法。 该方法可以包括以下步骤：在沉积室中提供硅晶片，将所述硅晶片预热至高于400℃的温度，并通过溅射工艺沉积含氢的抗反射和/或钝化涂层。 还提供一种涂覆设备，用于生产太阳能电池，特别是在Si晶片上的防反射和/或钝化涂层，其包括第一真空室，第二真空室和用于通过所述第一和第二真空室输送衬底的输送装置。 第一真空室包括至少一个红外辐射加热器，该加热器灯丝具有1800℃至3000℃之间的温度。第二真空室包括用于蒸发靶的溅射装置以及用于引入 包括氢的活性气体。

公开(公告)号：US20120040485A1

公开(公告)日：2012-02-16

申请号：US12860619

申请日：2010-08-20

申请人： Sven Schramm ,  Susanne Schläfer

发明人： Sven Schramm ,  Susanne Schläfer

IPC分类号： H01L31/18 ,  C23C14/24 ,  C23C14/00

CPC分类号： C23C14/541 ,  C23C14/16 ,  C23C16/463

摘要： Thermal management of film deposition processes. In one aspect, a deposition system includes a vacuum chamber defining an evacuated interior volume, a deposition source disposed within the interior volume, a substrate holder disposed within the interior volume and arranged to hold a substrate with a first surface of the substrate facing the deposition source and a second surface of the substrate disposed facing away from the deposition source, and a heat sink disposed to have a first side of the heat sink in radiative thermal contact with the second surface of the substrate held by the substrate holder, the first side of the heat sink comprising a collection of features having a longitudinal dimension that is four or more times larger than a lateral dimension between the features, the features thereby dimensioned and aligned to reflect, multiple times in succession, radiative thermal emissions of the second surface of the substrate.

摘要翻译： 薄膜沉积工艺的热管理。 在一个方面，沉积系统包括限定抽真空的内部容积的真空室，设置在内部容积内的沉积源，设置在内部空间内的衬底保持器，并且被布置成保持衬底，衬底的第一表面面向沉积 所述基板和所述基板的第二表面设置为背离所述沉积源，以及散热器，其布置成具有与由所述基板保持器保持的所述基板的所述第二表面辐射热接触的所述散热器的第一侧，所述第一侧 所述散热器包括具有纵向尺寸为所述特征之间的横向尺寸的四倍或更多倍的特征的集合，所述特征由此尺寸和对齐以反复多次连续地反射第二表面的辐射热发射 底物。

公开(公告)号：US20090320755A1

公开(公告)日：2009-12-31

申请号：US12146170

申请日：2008-06-25

申请人： Jian Liu ,  Sven Schramm ,  Roland Trassl

发明人： Jian Liu ,  Sven Schramm ,  Roland Trassl

IPC分类号： C23C16/44

CPC分类号： C23C14/022 ,  C23C14/568 ,  H01L21/67069 ,  H01L31/02168 ,  Y02E10/50

摘要： In the plasma pretreatment a substrate, preferably a silicon solar cell, is transported into a pretreatment chamber (1). In this pretreatment chamber (1) is contained a gas mixture comprising at least NH3 or hydrogen. By means of a cathode (4) a plasma is generated in the pretreatment chamber (1) by means of a glow discharge. The atomic hydrogen in the plasma reacts hereby with the oxygen, which is located on the solar cell (25) in the form of an oxide layer. By modifying or removing the oxide layer, better passivation of the solar cell can be attained and, consequently, higher efficiency.

摘要翻译： 在等离子体预处理中，将衬底，优选硅太阳能电池输送到预处理室（1）中。 在该预处理室（1）中含有至少包含NH 3或氢气的气体混合物。 通过阴极（4），通过辉光放电在预处理室（1）中产生等离子体。 等离子体中的原子氢与氧化物反应，氧气以氧化物层的形式位于太阳能电池（25）上。 通过改变或去除氧化物层，可以获得太阳能电池的更好的钝化，并因此获得更高的效率。