公开(公告)号：US20240128228A1

公开(公告)日：2024-04-18

申请号：US17971730

申请日：2022-10-24

申请人： Texas Instruments Incorporated

发明人： Aniceto Rabilas, JR. ,  Ray Fredric De Asis ,  Jason Colte

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L24/48 ,  H01L21/56 ,  H01L23/3107 ,  H01L24/85 ,  H01L24/45 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48175 ,  H01L2224/4846 ,  H01L2224/48465 ,  H01L2224/85986

摘要： An electronic device includes a package structure, a conductive terminal exposed outside the package structure, a semiconductor die in the package structure, and a bond wire having contiguous first and second portions. The first portion has a first end and a second end, the first end connected to the semiconductor die by a first bond and the second end connected to the conductive terminal by a second bond. The second portion has a first end and a second end, the first end of the second portion connected to the second end of the first portion, and the second end of the second portion connected to the conductive terminal by a third bond.

公开(公告)号：US20230154888A1

公开(公告)日：2023-05-18

申请号：US17987708

申请日：2022-11-15

申请人： Kulicke and Soffa Industries, Inc.

发明人： Jon W. Brunner ,  Wei Qin ,  Aashish Shah ,  Hui Xu ,  Jeong Ho Yang

IPC分类号： H01L23/00 ,  B23K20/10

CPC分类号： H01L24/78 ,  H01L24/85 ,  B23K20/10 ,  H01L24/48 ,  H01L2224/48221 ,  H01L2924/386 ,  H01L2224/78001 ,  H01L2224/78343 ,  H01L2224/78901 ,  H01L2224/7892 ,  H01L2224/78925 ,  H01L2224/85986 ,  H01L2224/859 ,  H01L2224/85205 ,  B23K2101/40

摘要： A method of calibrating an ultrasonic characteristic on a wire bonding system is provided. The method includes the steps of: (a) determining a reference ultrasonic characteristic for formation of a wire bond; (b) determining a reference non-stick ultrasonic characteristic that results in a non-stick wire bond condition; (c) determining a calibration non-stick ultrasonic characteristic, on a wire bonding system to be calibrated, that results in a non-stick wire bond condition; and (d) determining a calibration factor for the wire bonding system to be calibrated using the reference non-stick ultrasonic characteristic and the calibration non-stick ultrasonic characteristic.

公开(公告)号：US10062667B2

公开(公告)日：2018-08-28

申请号：US15368158

申请日：2016-12-02

申请人： Micron Technology, Inc.

发明人： Mung Suan Heng ,  Kok Chua Tan ,  Vince Chan Seng Leong ,  Mark S. Johnson

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L23/31

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16148 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/4554 ,  H01L2224/48091 ,  H01L2224/48149 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/4846 ,  H01L2224/48464 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48496 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85051 ,  H01L2224/85951 ,  H01L2224/85986 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  Y10T29/49144 ,  Y10T29/49149 ,  H01L2224/85186 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399

摘要： Stacked microfeature devices and associated methods of manufacture are disclosed. A package in accordance with one embodiment includes first and second microfeature devices having corresponding first and second bond pad surfaces that face toward each other. First bond pads can be positioned at least proximate to the first bond pad surface and second bond pads can be positioned at least proximate to the second bond pad surface. A package connection site can provide electrical communication between the first microfeature device and components external to the package. A wirebond can be coupled between at least one of the first bond pads and the package connection site, and an electrically conductive link can be coupled between the first microfeature device and at least one of the second bond pads of the second microfeature device. Accordingly, the first microfeature device can form a portion of an electrical link to the second microfeature device.

公开(公告)号：US09793179B2

公开(公告)日：2017-10-17

申请号：US15125035

申请日：2015-03-03

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. ,  TECHNISCHE UNIVERSITÄT BERLIN

发明人： Andreas Middendorf ,  Torsten Nowak ,  Sergei Janzen

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L23/00

CPC分类号： H01L22/12 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/4805 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/859 ,  H01L2224/85939 ,  H01L2224/85986 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399

摘要： The application relates to a method for determining a bonding connection (1) in a component arrangement (2), wherein the method has the following steps: producing a bonding connection (1) between a bonding section (3) of a bonding wire (4) and a metallic contact point (5), structuring a top-side surface of the bonding wire (4) in the region of the bonding section (3) and determining the bonding connection (1), wherein in this case a test voltage is applied to the bonding wire (4) and the bonding connection (1) so that the bonding connection (1) heats up owing to the current flow, generating a thermogram for the heated bonding connection (1) and determining whether the bonding connection (1) has been produced correctly by evaluating the thermogram. Furthermore, the application relates to a test apparatus for determining a bonding connection (1) in a component arrangement (2).

公开(公告)号：US09780069B2

公开(公告)日：2017-10-03

申请号：US14664168

申请日：2015-03-20

申请人： ROHM CO., LTD.

发明人： Motoharu Haga ,  Shingo Yoshida ,  Yasumasa Kasuya ,  Toichi Nagahara ,  Akihiro Kimura ,  Kenji Fujii

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  B23K20/00 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56

CPC分类号： H01L24/85 ,  B23K20/005 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78307 ,  H01L2224/78309 ,  H01L2224/83 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2224/85986 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19107 ,  H01L2924/20752 ,  H01L2924/20757 ,  H01L2924/3512 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/207 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/20758 ,  H01L2924/00015

摘要： A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

公开(公告)号：US09773766B2

公开(公告)日：2017-09-26

申请号：US14422152

申请日：2013-01-09

申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. ,  SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.

发明人： Ning Ye ,  Chin-Tien Chiu ,  Suresh Upadhyayula ,  Peng Fu ,  Zhong Lu ,  Cheeman Yu ,  Yuang Zhang ,  Li Wang ,  Pradeep Kumar Rai ,  Weili Wang ,  Enyong Tai ,  King Hoo Ong ,  Kim Lee Bock

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L25/16 ,  H01L25/18 ,  H01L23/14 ,  H01L23/538 ,  H01L23/31

CPC分类号： H01L25/18 ,  H01L23/145 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/5389 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/00 ,  H01L25/165 ,  H01L25/50 ,  H01L2224/05554 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27848 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32265 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/83986 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/143 ,  H01L2924/1438 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2924/19105 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.

公开(公告)号：US09741677B1

公开(公告)日：2017-08-22

申请号：US15057481

申请日：2016-03-01

申请人： Infineon Technologies AG

发明人： Volker Strutz ,  Rainer Markus Schaller ,  Franz-Peter Kalz

IPC分类号： H01L29/82 ,  H01L23/00 ,  H01L27/22

CPC分类号： H01L24/29 ,  G01R33/0052 ,  H01L23/49503 ,  H01L23/49506 ,  H01L23/4951 ,  H01L23/49513 ,  H01L23/49548 ,  H01L23/60 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L27/22 ,  H01L2224/2929 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/29561 ,  H01L2224/2957 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/30101 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/0665

摘要： A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 Ω·cm and 1010 Ω·cm.

公开(公告)号：US09362244B2

公开(公告)日：2016-06-07

申请号：US14375408

申请日：2012-10-22

申请人： SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.

发明人： Chin Tien Chiu ,  Cheeman Yu ,  Hem Takiar

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L21/56 ,  H01L21/82 ,  H01L23/31 ,  H01L25/065 ,  H01L25/00 ,  H01L23/14 ,  H01L23/495 ,  H01L23/538

CPC分类号： H01L24/06 ,  H01L21/561 ,  H01L21/82 ,  H01L23/145 ,  H01L23/3121 ,  H01L23/49575 ,  H01L23/5386 ,  H01L24/03 ,  H01L24/24 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/82 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/03011 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/24145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85001 ,  H01L2224/85947 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06551 ,  H01L2225/06562 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A memory device, and a method of making the memory device, are disclosed. The memory device is fabricated by mounting one or more semiconductor die on a substrate, and wire bonding the die to the substrate. The die and wire bonds are encapsuated, and the encapsulated device is singulated. The wire bonds are severed during the singulation step, and thereafter the severed wire bonds are connected to the substrate by external connectors on one or more surfaces of the molding compound.

摘要翻译： 公开了一种存储器件及其制造方法。 存储器件通过将一个或多个半导体管芯安装在衬底上并将管芯接合到衬底来制造。 管芯和引线键合被封装，并且封装的器件被分割。 在分割步骤期间，线接合被切断，此后，切断的线接合通过模塑料的一个或多个表面上的外部连接器连接到基底。

公开(公告)号：US20160056124A1

公开(公告)日：2016-02-25

申请号：US14929326

申请日：2015-10-31

申请人： Renesas Electronics Corporation

发明人： Nobuyasu Muto

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L23/04 ,  H01L23/498

CPC分类号： H01L25/0652 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/04 ,  H01L23/3142 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/27 ,  H01L24/29 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2224/04042 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/4911 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/49429 ,  H01L2224/73265 ,  H01L2224/75743 ,  H01L2224/78 ,  H01L2224/78301 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/85001 ,  H01L2224/85051 ,  H01L2224/85148 ,  H01L2224/85205 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30105 ,  H01L2224/85186 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/32225 ,  H01L2224/4554

摘要： Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.

摘要翻译： 进行使用叶片的切割步骤进行以获得半导体晶片的厚度减小的半导体芯片时发生的切屑破裂。 当在半导体晶片的切割步骤中切割半导体晶片时，刀片如下进行：沿着第一直线在第一方向（图12中的Y方向）的切割中，刀片从第一直线 指向第二点。 第一点位于第一部分中，第二点与第一点相对，第二点与穿过其间的半导体晶片的中心点的第二直线相对。

公开(公告)号：US20150340398A1

公开(公告)日：2015-11-26

申请号：US14760258

申请日：2013-09-24

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Shin-ichiro TAKAGI ,  Shingo ISHIHARA ,  Masaharu MURAMATSU

IPC分类号： H01L27/146 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L27/14636 ,  H01L23/49838 ,  H01L23/4985 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L27/14618 ,  H01L27/14634 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48997 ,  H01L2224/4911 ,  H01L2224/49175 ,  H01L2224/49429 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85207 ,  H01L2224/85951 ,  H01L2224/85986 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15787 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599 ,  H01L2224/48455

摘要： An electronic component device includes a first electronic component on which a first electrode pad is disposed, a second electronic component on which a second electrode pad having a first pad portion and a second pad portion is disposed, a first bonding wire having one end connected to the first electrode pad and the other end connected to the first pad portion, and a second bonding wire having one end connected to a connection portion between the first pad portion and the first bonding wire and the other end connected to the second pad portion. The second electrode pad is disposed on the second electronic component so that the first pad portion and the second pad portion are laid along a direction intersecting with an extending direction of the first bonding wire. The extending direction of the first bonding wire intersects with an extending direction of the second bonding wire.

摘要翻译： 电子部件装置包括：第一电子部件，配置有第一电极焊盘;第二电子部件，具有第一焊盘部和第二焊盘部的第二电极焊盘，第一焊接线的一端连接到 第一电极焊盘和另一端连接到第一焊盘部分，以及第二接合线，其一端连接到第一焊盘部分和第一焊接线之间的连接部分，而另一端连接到第二焊盘部分。 第二电极焊盘设置在第二电子部件上，使得第一焊盘部分和第二焊盘部分沿着与第一焊接线的延伸方向交叉的方向放置。 第一接合线的延伸方向与第二接合线的延伸方向相交。