利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.038 秒)

    STEREO IMAGING MINIATURE ENDOSCOPE WITH SINGLE IMAGING CHIP AND CONJUGATED MULTI-BANDPASS FILTERS
    1.
    发明申请
    STEREO IMAGING MINIATURE ENDOSCOPE WITH SINGLE IMAGING CHIP AND CONJUGATED MULTI-BANDPASS FILTERS 有权
    立体成像微型内窥镜与单片成像芯片和并联多通道滤波器

    公开(公告)号：US20110115882A1

    公开(公告)日：2011-05-19

    申请号：US12946839

    申请日：2010-11-15

    申请人： Hrayr Karnig SHAHINIAN ,  Younsam BAE ,  Harish M MANOHARA ,  Victor E. WHITE ,  Kirill V. SHCHEGLOV ,  Robert S. KOWALCZYK

    发明人： Hrayr Karnig SHAHINIAN ,  Younsam BAE ,  Harish M MANOHARA ,  Victor E. WHITE ,  Kirill V. SHCHEGLOV ,  Robert S. KOWALCZYK

    IPC分类号： H04N13/00 ,  A61B1/07 ,  A61B1/055

    CPC分类号： A61B1/00193 ,  A61B1/00183 ,  A61B1/00188 ,  A61B1/045 ,  A61B1/05 ,  A61B1/0607 ,  A61B1/0638 ,  A61B1/0646 ,  A61B1/0684 ,  H04N13/211 ,  H04N13/214 ,  H04N13/254 ,  H04N13/257

    摘要： A dual objective endoscope for insertion into a cavity of a body for providing a stereoscopic image of a region of interest inside of the body including an imaging device at the distal end for obtaining optical images of the region of interest (ROI), and processing the optical images for forming video signals for wired and/or wireless transmission and display of 3D images on a rendering device. The imaging device includes a focal plane detector array (FPA) for obtaining the optical images of the ROI, and processing circuits behind the FPA. The processing circuits convert the optical images into the video signals. The imaging device includes right and left pupil for receiving a right and left images through a right and left conjugated multi-band pass filters. Illuminators illuminate the ROI through a multi-band pass filter having three right and three left pass bands that are matched to the right and left conjugated multi-band pass filters. A full color image is collected after three or six sequential illuminations with the red, green and blue lights.

    摘要翻译： 一种双目标内窥镜，用于插入到身体的空腔中，用于提供身体内部的感兴趣区域的立体图像，包括在远端处的成像装置，以获得感兴趣区域（ROI）的光学图像，并且处理 用于形成用于有线和/或无线传输的视频信号的光学图像，以及在渲染设备上显示3D图像。 成像装置包括用于获得ROI的光学图像的焦平面检测器阵列（FPA）以及FPA后面的处理电路。 处理电路将光学图像转换成视频信号。 成像装置包括用于通过右和左共轭多带通滤波器接收右图像和左图像的左和右光瞳。 照明器通过具有与右和左共轭多带通滤波器匹配的三个右通道和三通道的多通带滤波器照亮ROI。 在红色，绿色和蓝色灯光下三到六次顺序照明后，会收集全彩图像。

    High resolution X-ray lithography using phase shift masks
    2.
    发明授权
    High resolution X-ray lithography using phase shift masks 失效
    使用相移掩模的高分辨率X射线光刻

    公开(公告)号：US5187726A

    公开(公告)日：1993-02-16

    申请号：US767838

    申请日：1991-09-30

    申请人： Victor E. White

    发明人： Victor E. White

    IPC分类号： G03F1/22 ,  G03F1/26 ,  G03F7/20 ,  G21K1/06 ,  H01L21/027

    CPC分类号： G03F1/22 ,  G03F1/26 ,  G03F7/70283 ,  G21K1/06

    摘要： Phase shift masks for X-ray lithography include a carrier with a phase shift feature formed thereon having at least one sharply defined sidewall which is upright with respect to the surface of the carrier. The height of the feature on the phase shift mask is selected such that it provides a phase shift of substantially one-half wavelength of a selected band of the X-rays passed therethrough with respect to the X-rays that are passed through the carrier where there is no phase shift material. The phase shift mask is positioned closely above a target composed of a photoresist on a substrate, and X-rays are then passed therethrough, preferably being provided by synchrotron radiation. The collimated X-rays passed through the mask into the photoresist expose those areas of the photoresist away from the upright sidewalls sufficiently to cause those to be removed by developer, whereas the regions under the upright sidewalls have the X-ray intensity canceled by diffraction effects such that that the region under the sidewall is left in place on the substrate after developing. Very thin walled structures, in the range of 50 nanometers, can be formed in this manner by X-ray lithography.

    摘要翻译： 用于X射线光刻的相移掩模包括其上形成有相移特征的载体，其具有至少一个相对于载体表面直立的限定侧壁。 选择相移掩模上的特征的高度，使得其相对于通过载体的X射线提供通过其中的X射线的选定频带的基本上二分之一波长的相移， 没有相移材料。 相移掩模位于基板上由光致抗蚀剂组成的目标上方，然后X射线通过，优选地由同步加速器辐射提供。 准直的X射线通过掩模进入光致抗蚀剂使得光致抗蚀剂的那些区域远离直立侧壁充分地使其被显影剂除去，而直立侧壁下方的区域具有通过衍射效应消除的X射线强度 使得在显影之后侧壁下方的区域留在基底上。 通过X射线光刻可以以这种方式形成在50纳米范围内的非常薄的壁结构。

    Low stress, ultra-thin, uniform membrane, methods of fabricating same and incorporation into detection devices
    5.
    发明申请
    Low stress, ultra-thin, uniform membrane, methods of fabricating same and incorporation into detection devices 审中-公开
    低应力，超薄，均匀的膜，其制造方法，并入检测装置

    公开(公告)号：US20060144778A1

    公开(公告)日：2006-07-06

    申请号：US11192553

    申请日：2005-07-29

    申请人： Frank J. Grunthaner ,  Victor E. White

    发明人： Frank J. Grunthaner ,  Victor E. White

    IPC分类号： C23F1/00 ,  C02F1/44

    CPC分类号： B01D67/0062 ,  B01D69/122

    摘要： The present disclosure is directed, in part, to a method for fabricating a low-stress, ultra-thin membrane as well as the low-stress, ultra-thin membrane formed by this method. The method includes: layering a first layer on a semiconductor substrate; etching a hole in the first layer; layering a second layer on the membrane of the first layer and over the hole; and etching the substrate beginning from the bottom surface thereof, such that at least a portion of the substrate aligned with the hole in the first layer is removed. The first and second layers are made of substantially the same material, which will usually be silicon nitride, however, it is contemplated that other dielectric materials could be used, but it is preferred that the second layer has an amorphous structure. It is preferred that the second layer be formed with a slightly bubble-shape to help deflect stresses on the second layer. Generally, low pressure chemical vapor deposition will be used to create at least the first and second layers. As a result of this basic method, the second layer has an ultra-thin thickness. Among other devices, the ultra-thin membrane is useful in a device for detecting physical characteristics of a sample bombarded with electrons. In such a device, the ultra-thin, low-stress membrane is positioned adjacent a electron detector. The device may further include an evacuated chamber at least partially bounded by the ultra-thin low-stress membrane.

    摘要翻译： 本公开部分地涉及用于制造低应力超薄膜的方法以及通过该方法形成的低应力超薄膜。 该方法包括：在半导体衬底上分层第一层; 蚀刻第一层中的孔; 在第一层的膜上并在孔上方分层第二层; 并且从底面开始刻蚀基板，使得与第一层中的孔对准的至少一部分基板被去除。 第一层和第二层由基本相同的材料制成，其通常是氮化硅，然而，可以设想可以使用其它介电材料，但优选的是第二层具有非晶结构。 优选地，第二层形成为微小的气泡形状，以帮助偏转第二层上的应力。 通常，将使用低压化学气相沉积来产生至少第一层和第二层。 作为该基本方法的结果，第二层具有超薄的厚度。 在其他装置中，超薄膜可用于检测用电子轰击的样品的物理特性的装置。 在这种装置中，超薄低应力膜位于电子检测器附近。 该装置还可包括至少部分地由超薄低应力膜界定的抽真空室。