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公开(公告)号：US4176443A
公开(公告)日：1979-12-04
申请号：US957331
申请日：1978-11-03
IPC分类号： H01L21/60 , H01L23/532 , B01J17/00
CPC分类号： H01L24/05 , H01L23/53209 , H01L23/53223 , H01L24/11 , H01L2224/0401 , H01L2224/04042 , H01L2224/05083 , H01L2224/05644 , H01L2224/05664 , H01L2224/13099 , H01L2224/48463 , H01L2224/85801 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , Y10T29/49155
摘要： A silicon wafer, having a front surface with disjointed contact areas and a uniform rear surface, is provided at the contact areas of its front surface with respective pads each comprising a base layer of aluminum, a first intermediate layer of chromium or titanium, a second intermediate layer of nickel and an outer layer of gold or palladium. The rear surface is covered with a base layer of gold (or of a gold/arsenic alloy in the case of N-type silicon), a first intermediate layer of chromium, a second intermediate layer of nickel and an outer layer of gold or palladium to which a film of low-melting bonding agent (lead/tin solder) is applied. After testing and elimination of unsatisfactory wafer sections, the remaining sections are separated into dies placed on a conductive substrate; an extremity of a respective terminal lead, encased in a similar bonding agent, is then placed on the outer layer of each contact pad. All soldering operations are simultaneously performed in a furnace.
摘要翻译： 具有具有不连续接触区域和均匀后表面的前表面的硅晶片在其前表面的接触区域处设置有各自的焊盘，每个焊盘包括铝基底层，铬或钛的第一中间层，第二中间层 镍的中间层和金或钯的外层。 后表面覆盖有金（或在N型硅的情况下为金/砷合金）的基底层，铬的第一中间层，镍的第二中间层和金或钯的外层 使用低熔点粘合剂（铅/锡焊料）的薄膜。 在测试和消除不令人满意的晶片部分之后，将剩余的部分分离成放置在导电衬底上的管芯; 然后将封装在相似的粘合剂中的相应端子引线的末端放置在每个接触垫的外层上。 所有焊接操作都在炉子中同时进行。
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