摘要:
A system (100) for characterizing surfaces can include a nanotip microscope (104) in a first pressure envelope (102) at a first pressure with an electrically conductive nanotip (110) mounted thereon for characterizing a sample surface. The system can also include an ion imaging system (122, 124, 128) within a second pressure envelope (120) at a second pressure. The second pressure can less than or equal to the first pressure and the pressure envelopes (102, 120) can be separated by a pressure limiting aperture (PLA) (132). The system can further include gas sources (116, 118) for introducing into the first pressure envelope (102) at least one gas, and a voltage supply (114) coupled to the nanotip (110) for generating an electric field between the nanotip (114) and the PLA (132). In the system, the electric field repels and ionizes molecules or atoms of the gas in proximity to the nanotip (110) and the ion imaging system (122, 124, 128) collects at least a portion the repelled and ionized molecules or atoms traversing the PLA (132) to image the nanotip (110).
摘要:
A system (100) for characterizing surfaces can include a nanotip microscope (104) in a first pressure envelope (102) at a first pressure with an electrically conductive nanotip (110) mounted thereon for characterizing a sample surface. The system can also include an ion imaging system (122, 124, 128) within a second pressure envelope (120) at a second pressure. The second pressure can less than or equal to the first pressure and the pressure envelopes (102, 120) can be separated by a pressure limiting aperture (PLA) (132). The system can further include gas sources (116, 118) for introducing into the first pressure envelope (102) at least one gas, and a voltage supply (114) coupled to the nanotip (110) for generating an electric field between the nanotip (114) and the PLA (132). In the system, the electric field repels and ionizes molecules or atoms of the gas in proximity to the nanotip (110) and the ion imaging system (122, 124, 128) collects at least a portion the repelled and ionized molecules or atoms traversing the PLA (132) to image the nanotip (110).
摘要:
A semiconductor device and a method for fabricating a semiconductor device with reduced line bending is provided. The method can include forming a first layer and depositing a photoresist layer on the first layer. The photoresist layer can be patterned, such that the patterning comprises at least one support feature disposed adjacent to an outside of a corner feature.
摘要:
A method comprising characterizing the dimensions of structures on a semiconductor device having dimensions less than approximately 100 nanometers (nm) using one of scanning probe microscopy (SPM) or profilometry.
摘要:
A method comprising characterizing the dimensions of structures on a semiconductor device having dimensions less than approximately 100 nanometers (nm) using one of scanning probe microscopy (SPM) or profilometry.