-
公开(公告)号：US20180123063A1
公开(公告)日：2018-05-03
申请号：US15642066
申请日：2017-07-05
申请人： JAMES T. KELLIHER , MONICA P. LILLY , ROBERT S. HOWELL , WAYNE STEPHEN MILLER , PATRICK B. SHEA , MATTHEW J. WALKER , WILLIAM J. SWEET
发明人： JAMES T. KELLIHER , MONICA P. LILLY , ROBERT S. HOWELL , WAYNE STEPHEN MILLER , PATRICK B. SHEA , MATTHEW J. WALKER , WILLIAM J. SWEET
CPC分类号： H01L51/0533 , H01L51/0048 , H01L51/0566
摘要： One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.
-
公开(公告)号：US10027005B2
公开(公告)日：2018-07-17
申请号：US15010987
申请日：2016-01-29
摘要： An apparatus includes a top conductive layer of on an integrated circuit waveguide filter and a bottom conductive layer. The top and bottom conductive layers are coupled via a plurality of couplers that form an outline of the waveguide filter. A dielectric substrate layer is disposed between the top conductive layer and the bottom conductive layer of the integrated circuit waveguide filter. The dielectric substrate layer has a relative permittivity, εr that affects the tuning of the integrated circuit waveguide filter. At least one tunable via includes a tunable material disposed within the dielectric substrate layer and is coupled to a set of electrodes. The set of electrodes enable a voltage to be applied to the tunable material within the tunable via to change the relative permittivity of the dielectric substrate layer and to enable tuning the frequency characteristics of the integrated circuit waveguide filter.
-
公开(公告)号：US20170222292A1
公开(公告)日：2017-08-03
申请号：US15010987
申请日：2016-01-29
CPC分类号： H01P1/2002 , H01P1/2088 , H01P3/02 , H01P11/006 , H01P11/007
摘要： An apparatus includes a top conductive layer of on an integrated circuit waveguide filter and a bottom conductive layer. The top and bottom conductive layers are coupled via a plurality of couplers that form an outline of the waveguide filter. A dielectric substrate layer is disposed between the top conductive layer and the bottom conductive layer of the integrated circuit waveguide filter. The dielectric substrate layer has a relative permittivity, εr that affects the tuning of the integrated circuit waveguide filter. At least one tunable via includes a tunable material disposed within the dielectric substrate layer and is coupled to a set of electrodes. The set of electrodes enable a voltage to be applied to the tunable material within the tunable via to change the relative permittivity of the dielectric substrate layer and to enable tuning the frequency characteristics of the integrated circuit waveguide filter.
-
公开(公告)号：US20180301780A1
公开(公告)日：2018-10-18
申请号：US16008848
申请日：2018-06-14
CPC分类号： H01P1/2002 , H01P1/2088 , H01P3/02 , H01P11/006 , H01P11/007
摘要： An apparatus includes a top conductive layer of on an integrated circuit waveguide filter and a bottom conductive layer. The top and bottom conductive layers are coupled via a plurality of couplers that form an outline of the waveguide filter. A dielectric substrate layer is disposed between the top conductive layer and the bottom conductive layer of the integrated circuit waveguide filter. The dielectric substrate layer has a relative permittivity, εr that affects the tuning of the integrated circuit waveguide filter. At least one tunable via includes a tunable material disposed within the dielectric substrate layer and is coupled to a set of electrodes. The set of electrodes enable a voltage to be applied to the tunable material within the tunable via to change the relative permittivity of the dielectric substrate layer and to enable tuning the frequency characteristics of the integrated circuit waveguide filter.
-
公开(公告)号：US09748506B1
公开(公告)日：2017-08-29
申请号：US15340499
申请日：2016-11-01
申请人： James T. Kelliher , Monica P. Lilly , Robert S. Howell , Wayne Stephen Miller , Patrick B. Shea , Matthew J. Walker , William J. Sweet
发明人： James T. Kelliher , Monica P. Lilly , Robert S. Howell , Wayne Stephen Miller , Patrick B. Shea , Matthew J. Walker , William J. Sweet
CPC分类号： H01L51/0533 , H01L51/0048 , H01L51/0566
摘要： One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.
-
公开(公告)号：US10340568B2
公开(公告)日：2019-07-02
申请号：US16008848
申请日：2018-06-14
摘要： An apparatus includes a top conductive layer of on an integrated circuit waveguide filter and a bottom conductive layer. The top and bottom conductive layers are coupled via a plurality of couplers that form an outline of the waveguide filter. A dielectric substrate layer is disposed between the top conductive layer and the bottom conductive layer of the integrated circuit waveguide filter. The dielectric substrate layer has a relative permittivity, εr that affects the tuning of the integrated circuit waveguide filter. At least one tunable via includes a tunable material disposed within the dielectric substrate layer and is coupled to a set of electrodes. The set of electrodes enable a voltage to be applied to the tunable material within the tunable via to change the relative permittivity of the dielectric substrate layer and to enable tuning the frequency characteristics of the integrated circuit waveguide filter.
-
公开(公告)号：US10069093B2
公开(公告)日：2018-09-04
申请号：US15642066
申请日：2017-07-05
申请人： James T. Kelliher , Monica P. Lilly , Robert S. Howell , Wayne Stephen Miller , Patrick B. Shea , Matthew J. Walker , William J. Sweet
发明人： James T. Kelliher , Monica P. Lilly , Robert S. Howell , Wayne Stephen Miller , Patrick B. Shea , Matthew J. Walker , William J. Sweet
摘要： One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.012 秒)