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公开(公告)号：US20090194732A1
公开(公告)日：2009-08-06
申请号：US12023646
申请日：2008-01-31
申请人： Jun Luo , Wesley Hackenberger
发明人： Jun Luo , Wesley Hackenberger
摘要： A ternary single crystal relaxor piezoelectric grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.
摘要翻译： 使用Vertical Bridgeman方法从新型熔体生长的三元单晶弛豫压电体。 三元单晶的特征在于居里温度Tc至少为150℃，菱方相至四方相转变温度Trt为至少约110℃。三元晶体还表现出压电系数d33， 在至少约1200-2000pC / N的范围内。
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公开(公告)号：US07520931B2
公开(公告)日：2009-04-21
申请号：US11509128
申请日：2006-08-23
IPC分类号： C30B1/04
摘要： A method of making a single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material.
摘要翻译： 提供制造单晶材料的方法。 该方法包括提供具有多个晶粒的多晶材料。 该方法还包括向多晶材料中加入晶种以限定多晶材料的生长平面。 此外，具有晶种的多晶材料可以进行热处理，其中热处理不包括熔化多晶材料。
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公开(公告)号：US20070038111A1
公开(公告)日：2007-02-15
申请号：US11202674
申请日：2005-08-12
申请人： Paul Rehrig , Xiaoning Jiang , Wesley Hackenberger , Jian Yuan , Richard Romley
发明人： Paul Rehrig , Xiaoning Jiang , Wesley Hackenberger , Jian Yuan , Richard Romley
IPC分类号： A61B8/14
CPC分类号： B06B1/0629 , A61B8/06 , A61B8/12 , A61B8/14 , A61B8/445 , H01L41/187 , Y10T29/42
摘要： The present invention generally relates to medical devices, and more particularly to an improved medical imaging device. In one embodiment, an imaging device includes a drive shaft having proximal and distal ends received within the lumen; and an imaging transducer assembly coupled to the distal end of the drive shaft and positioned at the distal portion of the elongate member. The imaging transducer assembly includes one or more imaging transducers formed with a piezoelectric composite plate using photolithography based micromachining.
摘要翻译： 本发明一般涉及医疗装置，更具体地涉及一种改进的医学成像装置。 在一个实施例中，成像装置包括驱动轴，其具有容纳在内腔内的近端和远端; 以及耦合到所述驱动轴的远端并且定位在所述细长构件的远端部分处的成像换能器组件。 成像换能器组件包括使用基于光刻的微加工的压电复合板形成的一个或多个成像换能器。
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4.发明授权Method for reduction of sinter temperatures of antiferroelectric, lead-based ceramics by use of lithium compound additions and capacitors made with such ceramics 失效通过使用锂化合物添加剂和由这种陶瓷制成的电容器来降低反铁电，铅基陶瓷的烧结温度的方法
公开(公告)号：US5993895A
公开(公告)日：1999-11-30
申请号：US949168
申请日：1997-10-10
申请人： Sei-Joo Jang , Joseph P. Dougherty , Wesley Hackenberger , MingFang Song , Steven Perini , Beth Jones
发明人： Sei-Joo Jang , Joseph P. Dougherty , Wesley Hackenberger , MingFang Song , Steven Perini , Beth Jones
CPC分类号： H01G4/1245 , C04B35/491 , Y10T29/43 , Y10T29/435
摘要： A method for densifying a dielectric antiferroelectric material includes the steps of adding a compound which includes lithium to the dielectric material to create a mixture thereof. Thereafter, the mixture is heated to a temperature of not greater than about 1100.degree. C. for a predetermined period to densify the mixture. It is preferred that the lithium compound be a lithium salt and that the dielectric material comprise a PLZT composition.
摘要翻译： 一种用于致密化电介质反铁电材料的方法包括以下步骤：将包含锂的化合物添加到电介质材料中以产生其混合物。 此后，将混合物加热至不超过约1100℃的温度一段预定时间以使混合物致密化。 锂化合物优选为锂盐，并且电介质材料包含PLZT组合物。
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公开(公告)号：US08597535B2
公开(公告)日：2013-12-03
申请号：US13108404
申请日：2011-05-16
申请人： Jun Luo , Wesley Hackenberger
发明人： Jun Luo , Wesley Hackenberger
IPC分类号： C04B35/493 , H01L41/187
CPC分类号： C30B11/00 , C04B35/499 , C04B2235/3206 , C04B2235/3255 , C04B2235/3286 , C30B29/22 , C30B29/30 , C30B29/32 , H01L41/1875 , H01L41/41
摘要： A ternary single crystal relaxor piezoelectric of PMN-PZ-PT grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.
摘要翻译： 使用Vertical Bridgeman方法从新型熔体生长的PMN-PZ-PT的三元单晶弛豫压电体。 三元单晶的特征在于居里温度Tc至少为150℃，菱方相至四方相转变温度Trt为至少约110℃。三元晶体还表现出压电系数d33， 在至少约1200-2000pC / N的范围内。
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6.发明申请公开(公告)号：US20080047483A1
公开(公告)日：2008-02-28
申请号：US11509128
申请日：2006-08-23
IPC分类号： C30B29/06
摘要： A method of making a single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material.
摘要翻译： 提供制造单晶材料的方法。 该方法包括提供具有多个晶粒的多晶材料。 该方法还包括向多晶材料中加入晶种以限定多晶材料的生长平面。 此外，具有晶种的多晶材料可以进行热处理，其中热处理不包括熔化多晶材料。
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公开(公告)号：US20110311815A1
公开(公告)日：2011-12-22
申请号：US13108404
申请日：2011-05-16
申请人： Jun LUO , Wesley HACKENBERGER
发明人： Jun LUO , Wesley HACKENBERGER
CPC分类号： C30B11/00 , C04B35/499 , C04B2235/3206 , C04B2235/3255 , C04B2235/3286 , C30B29/22 , C30B29/30 , C30B29/32 , H01L41/1875 , H01L41/41
摘要： A ternary single crystal relaxor piezoelectric of PMN-PZ-PT grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.
摘要翻译： 使用Vertical Bridgeman方法从新型熔体生长的PMN-PZ-PT的三元单晶弛豫压电体。 三元单晶的特征在于居里温度Tc至少为150℃，菱方相至四方相转变温度Trt为至少约110℃。三元晶体还表现出压电系数d33， 在至少约1200-2000pC / N的范围内。
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公开(公告)号：US20100279844A1
公开(公告)日：2010-11-04
申请号：US12837666
申请日：2010-07-16
申请人： Wesley HACKENBERGER , Seongtae Kwon
发明人： Wesley HACKENBERGER , Seongtae Kwon
IPC分类号： C04B35/47 , C04B35/472 , C04B35/468 , C03C14/00
CPC分类号： H01G4/1245 , C04B35/493 , C04B35/6261 , C04B35/6263 , C04B35/6264 , C04B35/632 , C04B35/6455 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3239 , C04B2235/3241 , C04B2235/3267 , C04B2235/3275 , C04B2235/3279 , C04B2235/3293 , C04B2235/3296 , C04B2235/365 , C04B2235/5409 , C04B2235/5445 , C04B2235/6025 , C04B2235/604 , C04B2235/661 , C04B2235/768 , C04B2235/77 , H01G4/30 , Y10T29/435
摘要： An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.
摘要翻译： 公开了可以形成为层叠电容器的反铁电陶瓷材料。 反铁电陶瓷材料选自Pb（Sn，Zr，Ti）O3（PSnZT）组成族。
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