公开(公告)号：US09966256B2

公开(公告)日：2018-05-08

申请号：US14844193

申请日：2015-09-03

申请人： TOKYO ELECTRON LIMITED

发明人： Satoshi Takagi ,  Kazuya Takahashi ,  Hiroki Murakami ,  Daisuke Suzuki

IPC分类号： C23C16/00 ,  H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C30B1/02 ,  C30B1/04 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52

CPC分类号： H01L21/02532 ,  C23C16/02 ,  C23C16/22 ,  C23C16/24 ,  C30B1/026 ,  C30B1/04 ,  C30B29/08 ,  C30B29/52 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02669

摘要： There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.

公开(公告)号：US09810980B1

公开(公告)日：2017-11-07

申请号：US15426523

申请日：2017-02-07

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  TOKYO ELECTRON LIMITED

发明人： Hongyun Cottle ,  Cheng Chi ,  Chi-Chun Liu ,  Kristin Schmidt

IPC分类号： C03C15/00 ,  G03F7/00 ,  C30B1/04 ,  C30B29/58 ,  H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3105

CPC分类号： G03F7/0002 ,  B81C1/00031 ,  B81C1/00396 ,  B81C1/00531 ,  B81C2201/0149 ,  C09K13/00 ,  C30B1/04 ,  C30B7/005 ,  C30B29/58 ,  C30B33/08 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/302 ,  H01L21/31058 ,  H01L21/31133

摘要： Graphoepitaxy directed self-assembly methods generally include grafting a conformal layer of a polymer brush onto a topographic substrate. A planarization material, which functions as a sacrificial material is coated onto the topographic substrate. The planarization material is etched back to a top surface of the topographic substrate, wherein the etch back removes the polymer brush from the top surfaces of the topographic substrate. The remaining portion of the polymer brush is protected by the remaining planarization material below the top surface of the topographic substrate, which can be removed with a solvent to provide the topographic substrate with a conformal polymer brush below the top surface of the topographic substrate. The substrate is then coated with a block copolymer and annealed to direct self-assembly of the block copolymer. The methods mitigate island and/or hole defect formation.

公开(公告)号：US20170174574A1

公开(公告)日：2017-06-22

申请号：US15447670

申请日：2017-03-02

申请人： NGK INSULATORS, LTD.

发明人： Kiyoshi MATSUSHIMA ,  Morimichi WATANABE ,  Kei SATO ,  Tsutomu NANATAKI

IPC分类号： C04B35/115 ,  C01F7/30 ,  C04B35/634 ,  C04B35/632 ,  C30B1/10 ,  C04B35/638 ,  C04B35/645 ,  C30B1/04 ,  C30B29/20 ,  C01F7/02 ,  C04B35/63

CPC分类号： C04B35/115 ,  C01F7/02 ,  C01F7/30 ,  C01F7/441 ,  C01F7/442 ,  C01P2002/72 ,  C01P2004/20 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2006/80 ,  C04B35/6268 ,  C04B35/6303 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/322 ,  C04B2235/3418 ,  C04B2235/425 ,  C04B2235/445 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/612 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/725 ,  C04B2235/77 ,  C04B2235/787 ,  C04B2235/9653 ,  C04B2235/9692 ,  C30B1/04 ,  C30B1/10 ,  C30B1/12 ,  C30B28/02 ,  C30B29/20 ,  G02B1/00 ,  H01L33/0079 ,  H01L33/28 ,  H01L33/32

摘要： An alumina sintered body according to the present invention has a degree of c-plane orientation of 90% or more as determined by Lotgering's method from an X-ray diffraction profile obtained by irradiating a plate surface with X-rays in a range of 2θ=20° to 70°. The alumina sintered body has no pores when a cross-sectional surface formed in a direction perpendicular to the plate surface is polished using an Ar+ ion beam and a mask and is examined under a scanning electron microscope at a magnification of 5,000 times. The alumina sintered body has a total mass fraction of impurity elements other than Mg and C of 100 ppm or less. This alumina sintered body has a high degree of orientation, high density, and high purity and thus has a higher optical translucency than those known in the art.

公开(公告)号：US09663871B2

公开(公告)日：2017-05-30

申请号：US13866185

申请日：2013-04-19

申请人： NGK INSULATORS, LTD.

发明人： Nobuyuki Kobayashi ,  Kazuki Maeda ,  Koichi Kondo ,  Tsutomu Nanataki ,  Katsuhiro Imai ,  Jun Yoshikawa

IPC分类号： C30B1/02 ,  C30B1/04 ,  C23C4/12 ,  C23C24/04 ,  C30B1/00 ,  C30B29/40 ,  C23C4/123

CPC分类号： C30B1/04 ,  C23C4/12 ,  C23C4/123 ,  C23C24/04 ,  C30B1/00 ,  C30B29/406

摘要： A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide.

公开(公告)号：US09518336B2

公开(公告)日：2016-12-13

申请号：US14646384

申请日：2013-12-04

申请人： ELEMENT SIX LIMITED ,  PRESIDENT AND FELLOWS OF HARVARD COLLEGE

发明人： Matthew Markham ,  Alastair Stacey ,  Nathalie De Leon ,  Yiwen Chu ,  Brendan John Shields ,  Birgit Judith Maria Hausmann ,  Patrick Maletinsky ,  Ruffin Eley Evans ,  Amir Yacoby ,  Hongkun Park ,  Marko Loncar ,  Mikhail D. Lukin

IPC分类号： C01B31/06 ,  C30B1/04 ,  C30B29/04 ,  C30B33/02 ,  G06N99/00 ,  B82Y10/00 ,  C30B30/00 ,  G01N21/64

CPC分类号： C30B1/04 ,  B82Y10/00 ,  C30B29/04 ,  C30B30/00 ,  C30B33/02 ,  G01N21/64 ,  G01N2021/6497 ,  G06N99/002

摘要： A synthetic diamond material comprising one or more spin defects having a full width half maximum intrinsic inhomogeneous zero phonon line width of no more than 100 MHz. The method for obtain such a material involves a multi-stage annealing process.

摘要翻译： 一种合成金刚石材料，其包含一个或多个具有不超过100MHz的全宽半最大固有不均匀零声子线宽的自旋缺陷。 获得这种材料的方法包括多阶段退火工艺。

公开(公告)号：US20160068990A1

公开(公告)日：2016-03-10

申请号：US14784598

申请日：2014-04-07

申请人： DREXEL UNIVERSITY

发明人： Jonathan E. SPANIER ,  Andrei AKBASHEU

IPC分类号： C30B1/02 ,  C23C16/56 ,  C30B29/30 ,  C30B1/04 ,  C30B29/24 ,  C30B29/32 ,  C23C16/455 ,  C23C16/40

CPC分类号： C30B1/023 ,  C23C16/40 ,  C23C16/409 ,  C23C16/45553 ,  C23C16/45555 ,  C23C16/56 ,  C30B1/026 ,  C30B1/04 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32

摘要： This disclosure provides methods for forming a perovskite film. Exemplary methods can include the steps of forming an amorphous layer on a substrate disposed in a reaction chamber, covering at least a portion of the amorphous layer with a barrier that at least partially prevents the first metal, the second metal, oxygen atoms, or a combination thereof from being released during annealing and annealing the amorphous layer to form a perovskite film. Formation of the amorphous layer on the substrate disposed in a reaction chamber may be effected by introducing a first compound comprising a first metal; introducing an oxidizing agent; and introducing a second compound comprising a second metal.

摘要翻译： 本公开提供了形成钙钛矿膜的方法。 示例性方法可以包括以下步骤：在设置在反应室中的基底上形成非晶层，用至少部分地防止第一金属，第二金属，氧原子或至少一部分的屏障覆盖非晶层的至少一部分 其组合在退火和退火期间被释放，以形成非晶层以形成钙钛矿膜。 在设置在反应室中的基板上形成非晶层可以通过引入包含第一金属的第一化合物来实现; 引入氧化剂; 并引入包含第二金属的第二化合物。

公开(公告)号：US09267199B2

公开(公告)日：2016-02-23

申请号：US14187960

申请日：2014-02-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Masashi Oota ,  Yoichi Kurosawa ,  Noritaka Ishihara

IPC分类号： C23C14/08 ,  C01G15/00 ,  B82Y30/00 ,  C23C14/34 ,  H01B1/08

CPC分类号： H01L21/02631 ,  B82Y30/00 ,  C01G15/006 ,  C01P2002/32 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C30B1/04 ,  C30B23/08 ,  C30B28/02 ,  C30B29/22 ,  C30B29/68 ,  H01J37/3429 ,  H01J2237/081 ,  H01J2237/3322 ,  H01J2237/3323 ,  H01L21/02565 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

摘要翻译： 提供一种可以形成具有少量缺陷的氧化物半导体膜的溅射靶的制造方法。 或者，形成具有少量缺陷的氧化物半导体膜。 提供一种制造溅射靶的方法，其包括以下步骤：形成多晶In-M-Zn氧化物（M表示选自铝，钛，镓，钇，锆，镧，铯，钕和铪中的金属 ）粉末，通过混合，烧结和研磨氧化铟，金属氧化物和氧化锌; 通过混合多晶In-M-Zn氧化物粉末和氧化锌粉末形成混合物; 通过压实混合物形成压块; 并烧结成型。

公开(公告)号：US20150197872A1

公开(公告)日：2015-07-16

申请号：US14420209

申请日：2013-07-25

申请人： CSIR

发明人： Kenneth Ikechukwu Ozoemena ,  Charl Jeremy Jafta

IPC分类号： C30B1/04 ,  H01M4/525 ,  H01M4/505 ,  C30B30/02 ,  C30B29/22

CPC分类号： C30B1/04 ,  C01G53/54 ,  C01P2002/32 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2004/03 ,  C30B29/22 ,  C30B30/02 ,  H01M4/505 ,  H01M4/525 ,  H01M2004/028

摘要： A process for producing a lithium-manganese-nickel oxide spinel material includes maintaining a solution comprising a dissolved lithium compound, a dissolved manganese compound, a dissolved nickel compound, a hydroxycarboxylic acid, a polyhydroxy alcohol, and, optionally, an additional metallic compound, at an elevated temperature T1, where T1 is below the boiling point of the solution, until the solution gels. The gel is maintained at an elevated temperature until it ignites and burns to form a Li—Mn—Ni—O powder. The Li—Mn—Ni—O powder is calcined to burn off carbon and/or other impurities present in the powder. The resultant calcined powder is optionally subjected 1 to microwave treatment, to obtain a treated powder, which is annealed to crystallize the powder. The resultant annealed material is optionally subjected to microwave treatment. At least one of the microwave treatments is carried out. The lithium-manganese-nickel oxide spinel material is thereby obtained.

摘要翻译： 一种生产锂锰 - 氧化镍尖晶石材料的方法包括：将包含溶解的锂化合物，溶解的锰化合物，溶解的镍化合物，羟基羧酸，多羟基醇和任选的另外的金属化合物的溶液， 在高温T1，其中T1低于溶液的沸点，直到溶液凝胶化。 将凝胶保持在升高的温度，直到其点燃并燃烧形成Li-Mn-Ni-O粉末。 煅烧Li-Mn-Ni-O粉末以烧掉存在于粉末中的碳和/或其它杂质。 所得煅烧粉末任选进行1微波处理，得到经过退火处理的粉末，使粉末结晶。 任选地对所得的退火材料进行微波处理。 至少进行一次微波处理。 由此得到锂锰 - 氧化镍尖晶石材料。

公开(公告)号：US20150070875A1

公开(公告)日：2015-03-12

申请号：US14368927

申请日：2013-05-30

申请人： National Institute for Materials Science

发明人： Naoto Hirosaki ,  Takashi Takeda ,  Shiro Funahashi

IPC分类号： C09K11/77 ,  C30B29/34 ,  H01J19/57 ,  G02F1/1335 ,  H01J17/49 ,  C30B1/04 ,  F21K99/00

CPC分类号： C09K11/7792 ,  C09K11/7706 ,  C09K11/7721 ,  C09K11/7734 ,  C09K11/7749 ,  C09K11/7764 ,  C30B1/04 ,  C30B29/34 ,  F21K9/64 ,  G02F1/133603 ,  G02F2001/133614 ,  H01J11/42 ,  H01J17/49 ,  H01J19/57 ,  H01J29/20 ,  H01L33/502 ,  H01L33/504 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A chemically and thermally stable phosphor having unconventional light emitting properties and high light emitting intensity with an LED of 470 nm or less, includes an inorganic compound comprising: a crystal designated by A3(D,E)8X14, a crystal designated by Sr3Si8O4N10 or an inorganic crystal having the identical crystal structure of the Sr3Si8O4N10 crystal, which comprises A element, D element, X element, and optionally E element if necessary (A is one or more kinds selected from Li, Mg, Ca, Sr, and Ba; D is one or more kinds selected from Si, Ge, Sn, Ti, Zr, and Hf; X is one or more kinds selected from O, N, and F; and E is one or more kinds selected from B, Al, Ga, In, Sc, Y, and La.), into which M element is solid-solved (M is one or more kinds selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb.).

摘要翻译： 具有470nm或更小的LED的非常规发光特性和高发光强度的化学和热稳定的荧光体包括无机化合物，其包含：由A3（D，E）8X14表示的晶体，由Sr 3 Si 8 O 4 N 10表示的晶体或 如果需要，包含A元素，D元素，X元素和任选的E元素的Sr 3 Si 8 O 4 N 10晶体的晶体结构相同的无机结晶（A是选自Li，Mg，Ca，Sr和Ba中的一种或多种; D 是选自Si，Ge，Sn，Ti，Zr和Hf中的一种或多种; X是选自O，N和F中的一种或多种; E是选自B，Al，Ga， （M，Mn，Ce，Pr，Nd，Sm，Eu，Tb，Dy和Yb中的一种或多种）固溶于其中的M元素（In，Sc，Y和La））。

公开(公告)号：US08932699B2

公开(公告)日：2015-01-13

申请号：US14002587

申请日：2012-03-02

申请人： Yasushi Ogimoto

发明人： Yasushi Ogimoto

IPC分类号： C30B1/04 ,  C30B29/32 ,  B82Y30/00 ,  C30B33/02 ,  H01L21/02

CPC分类号： C30B1/04 ,  B82Y30/00 ,  C01P2002/34 ,  C04B2235/768 ,  C30B29/32 ,  C30B33/02 ,  H01L21/02197 ,  Y10T428/24355

摘要： The present invention provides a crystalline substance that has an uneven structure extending along the direction of a crystal axis. An aspect of the present invention provides a crystalline substance 1, which has a surface 10L that exposes an oxide crystal thereon and extends in a direction of a crystal axis of the oxide crystal, wherein the surface 10L has an uneven structure that is configured by faces 11L to 14L extending in at least three orientations along the crystal axis.

摘要翻译： 本发明提供了具有沿着晶轴方向延伸的不均匀结构的结晶物质。 本发明的一个方面提供了一种结晶物质1，其具有在其上暴露氧化物晶体并在氧化物晶体的晶轴方向上延伸的表面10L，其中表面10L具有由面部构成的不均匀结构 11L至14L沿着晶轴至少沿三个取向延伸。