公开(公告)号：US20090107834A1

公开(公告)日：2009-04-30

申请号：US11927605

申请日：2007-10-29

申请人： Mengqi Ye ,  Rong Tao ,  Hua Chung ,  Goichi Yoshidome ,  William Rhodes ,  Peijun Ding

发明人： Mengqi Ye ,  Rong Tao ,  Hua Chung ,  Goichi Yoshidome ,  William Rhodes ,  Peijun Ding

IPC分类号： C23C14/06 ,  C23C14/34 ,  C23C14/35

CPC分类号： C23C14/06 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/345 ,  C23C14/351 ,  C23C14/358 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3455

摘要： A sputtering target for a sputtering chamber comprises a sputtering plate composed of a chalcogenide material comprising an average yield strength of from about 40 MPa to about 120 MPa and a thermal conductivity of at least about 2.8 W/(m·K). In one version the sputtering plate is composed of a chalcogenide material with a stoichiometric ratio that varies by less than about 5% throughout the body of the sputtering plate. In another version, the sputtering plate is composed of a chalcogenide material having an average grain size of at least 20 microns, and an oxygen content of less than 600 weight ppm. The sputtering target is sputtered by applying a pulsed DC voltage to the sputtering target.

摘要翻译： 溅射室的溅射靶包括由硫族化物材料构成的溅射板，该溅射板包括约40MPa至约120MPa的平均屈服强度和至少约2.8W /（m.K）的热导率。 在一个版本中，溅射板由化学计量比在溅射板的整个体内变化小于约5％的硫族化物材料组成。 在另一个版本中，溅射板由平均粒度为至少20微米，氧含量小于600重量ppm的硫族化物材料组成。 通过向溅射靶施加脉冲的DC电压来溅射溅射靶。

公开(公告)号：US20120175245A1

公开(公告)日：2012-07-12

申请号：US13422671

申请日：2012-03-16

申请人： Mengqi Ye ,  Hua Chung ,  Goichi Yoshidome ,  Philip Fulmer

发明人： Mengqi Ye ,  Hua Chung ,  Goichi Yoshidome ,  Philip Fulmer

IPC分类号： C23C14/34

CPC分类号： C23C14/358 ,  C23C14/046 ,  C23C14/0623 ,  C23C14/345 ,  C23C14/3485 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/3408 ,  H01J37/347

摘要： Methods and apparatus are provided for depositing phase-change materials. In one embodiment, a method is provided for processing a substrate including positioning a substrate in a processing chamber having a phase change material-based target coupled to a first power source, one or more coils coupled to a second power source, a substrate support coupled to a third power source, providing a processing gas to the processing chamber, biasing the phase change material-based target with continuous DC or pulsed DC power, applying power to the coils to generate an inductively coupled plasma, applying a bias to the substrate support, sputtering material from the target, ionizing the sputtered materials, and depositing the sputtered materials on the substrate surface.

摘要翻译： 提供了用于沉积相变材料的方法和装置。 在一个实施例中，提供了一种用于处理衬底的方法，包括将衬底定位在处理室中，所述处理室具有耦合到第一电源的相变材料基靶，耦合到第二电源的一个或多个线圈， 向处理室提供处理气体，以连续DC或脉冲DC功率偏置基于相变材料的靶，向线圈施加电力以产生电感耦合等离子体，向衬底支撑件施加偏压 ，从目标溅射材料，电离溅射的材料，以及将溅射的材料沉积在衬底表面上。

公开(公告)号：US20100096255A1

公开(公告)日：2010-04-22

申请号：US12255864

申请日：2008-10-22

申请人： MENGQI YE ,  Hua Chung ,  Goichi Yoshidome ,  Philip Fulmer

发明人： MENGQI YE ,  Hua Chung ,  Goichi Yoshidome ,  Philip Fulmer

IPC分类号： C23C14/34

CPC分类号： C23C14/358 ,  C23C14/046 ,  C23C14/0623 ,  C23C14/345 ,  C23C14/3485 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/3408 ,  H01J37/347

摘要： Methods and apparatus are provided for depositing phase-change materials. In one embodiment, a method is provided for processing a substrate including positioning a substrate in a processing chamber having a phase change material-based target coupled to a first power source, one or more coils coupled to a second power source, a substrate support coupled to a third power source, providing a processing gas to the processing chamber, biasing the phase change material-based target with continuous DC or pulsed DC power, applying power to the coils to generate an inductively coupled plasma, applying a bias to the substrate support, sputtering material from the target, ionizing the sputtered materials, and depositing the sputtered materials on the substrate surface.

摘要翻译： 提供了用于沉积相变材料的方法和装置。 在一个实施例中，提供了一种用于处理衬底的方法，包括将衬底定位在处理室中，所述处理室具有耦合到第一电源的相变材料基靶，耦合到第二电源的一个或多个线圈， 向处理室提供处理气体，以连续DC或脉冲DC功率偏置基于相变材料的靶，向线圈施加电力以产生电感耦合等离子体，向衬底支撑件施加偏压 ，从目标溅射材料，电离溅射的材料，以及将溅射的材料沉积在衬底表面上。

公开(公告)号：US08293647B2

公开(公告)日：2012-10-23

申请号：US12620818

申请日：2009-11-18

申请人： Jenn-Yue Wang ,  Hua Chung ,  Rong Tao ,  Hong Zhang

发明人： Jenn-Yue Wang ,  Hua Chung ,  Rong Tao ,  Hong Zhang

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  C25D5/022 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/321 ,  H01L2221/1063

摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.

摘要翻译： 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 一个实施例提供了一种提供用于处理衬底的方法的方法，包括在其上形成有沟槽或通孔结构的衬底上形成晶种层，用有机钝化膜涂覆种子层的一部分，以及将沟槽或通孔结构浸入 电镀溶液以在未被有机钝化膜覆盖的种子层上沉积导电材料。

公开(公告)号：US20100130007A1

公开(公告)日：2010-05-27

申请号：US12620818

申请日：2009-11-18

申请人： JENN-YUE WANG ,  Hua Chung ,  Rong Tao ,  Hong Zhang

发明人： JENN-YUE WANG ,  Hua Chung ,  Rong Tao ,  Hong Zhang

IPC分类号： H01L21/3205

CPC分类号： H01L21/76877 ,  C25D5/022 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/321 ,  H01L2221/1063

摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.

摘要翻译： 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 一个实施例提供了一种提供用于处理衬底的方法的方法，包括在其上形成有沟槽或通孔结构的衬底上形成晶种层，用有机钝化膜涂覆种子层的一部分，以及将沟槽或通孔结构浸入 电镀溶液以在未被有机钝化膜覆盖的种子层上沉积导电材料。

公开(公告)号：US08324095B2

公开(公告)日：2012-12-04

申请号：US12627977

申请日：2009-11-30

申请人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Craig Mosely ,  Mei Chang

发明人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Craig Mosely ,  Mei Chang

IPC分类号： H01L21/768

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/02063 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871

摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

摘要翻译： 提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。 通过原子层沉积来沉积氮化钽。 从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。 任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。 可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

公开(公告)号：US07892602B2

公开(公告)日：2011-02-22

申请号：US11422826

申请日：2006-06-07

申请人： Hua Chung ,  Ling Chen ,  Barry L. Chin

发明人： Hua Chung ,  Ling Chen ,  Barry L. Chin

IPC分类号： C23C16/34

CPC分类号： C23C16/45531 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843

摘要： Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.

摘要翻译： 在原子层沉积（ALD）工艺中在衬底上沉积金属氮化硅层的方法。 该方法提供了将处理室中的衬底定位在处理室内，该处理室包含集中的扩展通道，该通道朝向并基本上覆盖衬底呈锥形锥形，将工艺气体流入集中扩展通道以形成圆形流动图案，将衬底暴露于具有 圆形流动图案，并且在ALD工艺期间将衬底依次暴露于化学前体以形成金属氮化硅材料。 在一个实例中，ALD工艺顺序地将金属前体，氮前体和硅前体顺序地引入到具有圆形流动图案的工艺气体中。 金属氮化硅材料可以包含钽或钛。 在其它实例中，工艺气体或衬底可以暴露于等离子体。

公开(公告)号：US20100099270A1

公开(公告)日：2010-04-22

申请号：US12646706

申请日：2009-12-23

申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

IPC分类号： H01L21/302 ,  G06F17/00 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US20100096273A1

公开(公告)日：2010-04-22

申请号：US12256418

申请日：2008-10-22

申请人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

发明人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

IPC分类号： H01L21/288

CPC分类号： H01L21/76873 ,  C25D5/02 ,  C25D21/12 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.

摘要翻译： 一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。 在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。 衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。 在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。 掺杂剂主要并入到场区域上的导电种子层中。 导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成 在开口。

公开(公告)号：US07699023B2

公开(公告)日：2010-04-20

申请号：US11925667

申请日：2007-10-26

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima ,  Mei Chang

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima ,  Mei Chang

IPC分类号： C23C16/455 ,  C23C16/448 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/34 ,  C23C16/4404 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  Y10T137/0396

摘要： Embodiments as described herein provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid, and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is a gas box assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.

摘要翻译： 本文所述的实施例提供了用于执行原子层沉积工艺的装置和方法。 在一个实施例中，沉积室组件包含具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖，以及从通道延伸到外部部分的底部表面 室盖，底表面的形状和尺寸以基本上覆盖基板接收表面。 该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。 在一个示例中，气体源是气体箱组件，其通过至少一个分离配件附接到沉积室，并且包含远离气体出口的入口管。