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公开(公告)号：US20080302652A1
公开(公告)日：2008-12-11
申请号：US12132294
申请日：2008-06-03
申请人： William Robert Entley , Xing Chen , Ali Shajii , Kaveh Bakhtari , Andrew Cowe
发明人： William Robert Entley , Xing Chen , Ali Shajii , Kaveh Bakhtari , Andrew Cowe
IPC分类号： H05H1/24
CPC分类号： H01J37/3299 , H01J37/32357 , H01J37/3244 , H01J37/32449
摘要： A system for producing excited gases for introduction to a semiconductor processing chamber. The system includes a plasma source for generating a plasma. The plasma source includes a plasma chamber and a gas inlet for receiving process gases from a gas source. A gas flow rate controller is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 sccm to about 10,000 sccm over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber.
摘要翻译： 一种用于产生用于引入半导体处理室的激发气体的系统。 该系统包括用于产生等离子体的等离子体源。 等离子体源包括等离子体室和用于从气体源接收工艺气体的气体入口。 气体流量控制器耦合到气体入口，用于经由气体入口控制从气体源到等离子体室的处理气体的入口流量。 该系统包括用于检测从第一处理气体到第二处理气体的转变的控制回路，并且用于在大于约300毫秒的时间段内将第二处理气体的入口流量从约0sccm至约10,000sccm调节 以将等离子体施加的瞬态热通量负载保持在等离子体室的内表面低于等离子体室的汽化温度。
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公开(公告)号：US20090320677A1
公开(公告)日：2009-12-31
申请号：US12147078
申请日：2008-06-26
申请人： Ali Shajii , Xing Chen , Andrew Cowe , David Burtner , William Robert Entley , ShouQian Shao
发明人： Ali Shajii , Xing Chen , Andrew Cowe , David Burtner , William Robert Entley , ShouQian Shao
CPC分类号： H01J37/32357 , H01J37/32871 , Y10S55/15 , Y10T29/4935
摘要： A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel.
摘要翻译： 用于远程等离子体源的颗粒捕集器包括具有用于耦合到远程等离子体源的室的入口和用于耦合到处理室入口的出口的主体结构。 用于远程等离子体源的颗粒捕获器还包括形成在主体结构中并与主体结构入口和主体结构出口流体连通的气体通道。 气体通道可以限定穿过主体结构的路径，其使得从通道的第一部分通过的气体中的颗粒撞击限定气体通道的第二部分的壁，该壁相对于壁的表面成一定角度。 冷却剂构件可以与气体通道热连通。
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公开(公告)号：US07914603B2
公开(公告)日：2011-03-29
申请号：US12147078
申请日：2008-06-26
申请人： Ali Shajii , Xing Chen , Andrew Cowe , David Burtner , William Robert Entley , ShouQian Shao
发明人： Ali Shajii , Xing Chen , Andrew Cowe , David Burtner , William Robert Entley , ShouQian Shao
IPC分类号： B01D46/46
CPC分类号： H01J37/32357 , H01J37/32871 , Y10S55/15 , Y10T29/4935
摘要： A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel.
摘要翻译： 用于远程等离子体源的颗粒捕集器包括具有用于耦合到远程等离子体源的室的入口和用于耦合到处理室入口的出口的主体结构。 用于远程等离子体源的颗粒捕获器还包括形成在主体结构中并与主体结构入口和主体结构出口流体连通的气体通道。 气体通道可以限定穿过主体结构的路径，其使得从通道的第一部分通过的气体中的颗粒撞击限定气体通道的第二部分的壁，该壁相对于壁的表面成一定角度。 冷却剂构件可以与气体通道热连通。
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