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19 条记录 (耗时 0.023 秒)

    PARTICLE TRAP FOR A PLASMA SOURCE
    1.
    发明申请
    PARTICLE TRAP FOR A PLASMA SOURCE 失效
    用于等离子体源的颗粒捕获

    公开(公告)号：US20090320677A1

    公开(公告)日：2009-12-31

    申请号：US12147078

    申请日：2008-06-26

    申请人： Ali Shajii ,  Xing Chen ,  Andrew Cowe ,  David Burtner ,  William Robert Entley ,  ShouQian Shao

    发明人： Ali Shajii ,  Xing Chen ,  Andrew Cowe ,  David Burtner ,  William Robert Entley ,  ShouQian Shao

    IPC分类号： B01D53/22 ,  B01J19/08 ,  B01D46/46 ,  B01D45/08 ,  B01D50/00

    CPC分类号： H01J37/32357 ,  H01J37/32871 ,  Y10S55/15 ,  Y10T29/4935

    摘要： A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel.

    摘要翻译： 用于远程等离子体源的颗粒捕集器包括具有用于耦合到远程等离子体源的室的入口和用于耦合到处理室入口的出口的主体结构。 用于远程等离子体源的颗粒捕获器还包括形成在主体结构中并与主体结构入口和主体结构出口流体连通的气体通道。 气体通道可以限定穿过主体结构的路径，其使得从通道的第一部分通过的气体中的颗粒撞击限定气体通道的第二部分的壁，该壁相对于壁的表面成一定角度。 冷却剂构件可以与气体通道热连通。

    Particle trap for a plasma source
    2.
    发明授权
    Particle trap for a plasma source 失效
    用于等离子体源的粒子阱

    公开(公告)号：US07914603B2

    公开(公告)日：2011-03-29

    申请号：US12147078

    申请日：2008-06-26

    申请人： Ali Shajii ,  Xing Chen ,  Andrew Cowe ,  David Burtner ,  William Robert Entley ,  ShouQian Shao

    发明人： Ali Shajii ,  Xing Chen ,  Andrew Cowe ,  David Burtner ,  William Robert Entley ,  ShouQian Shao

    IPC分类号： B01D46/46

    CPC分类号： H01J37/32357 ,  H01J37/32871 ,  Y10S55/15 ,  Y10T29/4935

    摘要： A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel.

    摘要翻译： 用于远程等离子体源的颗粒捕集器包括具有用于耦合到远程等离子体源的室的入口和用于耦合到处理室入口的出口的主体结构。 用于远程等离子体源的颗粒捕获器还包括形成在主体结构中并与主体结构入口和主体结构出口流体连通的气体通道。 气体通道可以限定穿过主体结构的路径，其使得从通道的第一部分通过的气体中的颗粒撞击限定气体通道的第二部分的壁，该壁相对于壁的表面成一定角度。 冷却剂构件可以与气体通道热连通。

    Particle Reduction Through Gas and Plasma Source Control
    3.
    发明申请
    Particle Reduction Through Gas and Plasma Source Control 审中-公开
    通过气体和等离子体源控制减少粒子

    公开(公告)号：US20080302652A1

    公开(公告)日：2008-12-11

    申请号：US12132294

    申请日：2008-06-03

    申请人： William Robert Entley ,  Xing Chen ,  Ali Shajii ,  Kaveh Bakhtari ,  Andrew Cowe

    发明人： William Robert Entley ,  Xing Chen ,  Ali Shajii ,  Kaveh Bakhtari ,  Andrew Cowe

    IPC分类号： H05H1/24

    CPC分类号： H01J37/3299 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

    摘要： A system for producing excited gases for introduction to a semiconductor processing chamber. The system includes a plasma source for generating a plasma. The plasma source includes a plasma chamber and a gas inlet for receiving process gases from a gas source. A gas flow rate controller is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 sccm to about 10,000 sccm over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber.

    摘要翻译： 一种用于产生用于引入半导体处理室的激发气体的系统。 该系统包括用于产生等离子体的等离子体源。 等离子体源包括等离子体室和用于从气体源接收工艺气体的气体入口。 气体流量控制器耦合到气体入口，用于经由气体入口控制从气体源到等离子体室的处理气体的入口流量。 该系统包括用于检测从第一处理气体到第二处理气体的转变的控制回路，并且用于在大于约300毫秒的时间段内将第二处理气体的入口流量从约0sccm至约10,000sccm调节 以将等离子体施加的瞬态热通量负载保持在等离子体室的内表面低于等离子体室的汽化温度。

    Toroidal Low-Field Reactive Gas and Plasma Source Having a Dielectric Vacuum Vessel
    4.
    发明申请
    Toroidal Low-Field Reactive Gas and Plasma Source Having a Dielectric Vacuum Vessel 有权
    具有介质真空容器的环形低场反应气体和等离子体源

    公开(公告)号：US20070145023A1

    公开(公告)日：2007-06-28

    申请号：US11684916

    申请日：2007-03-12

    申请人： William Holber ,  Xing Chen ,  Andrew Cowe ,  Matthew Besen ,  Ronald Collins ,  Susan Trullin ,  Shouqian Shao

    发明人： William Holber ,  Xing Chen ,  Andrew Cowe ,  Matthew Besen ,  Ronald Collins ,  Susan Trullin ,  Shouqian Shao

    IPC分类号： B23K9/00

    CPC分类号： H01J37/32357 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32522

    摘要： Plasma ignition and cooling apparatus and methods for plasma systems are described. An apparatus can include a vessel and at least one ignition electrode adjacent to the vessel. A total length of a dimension of the at least one ignition electrode is greater than 10% of a length of the vessel's channel. The apparatus can include a dielectric toroidal vessel, a heat sink having multiple segments urged toward the vessel by a spring-loaded mechanism, and a thermal interface between the vessel and the heat sink. A method can include providing a gas having a flow rate and a pressure and directing a portion of the flow rate of the gas into a vessel channel. The gas is ignited in the channel while the remaining portion of the flow rate is directed away from the channel.

    摘要翻译： 描述了等离子体点火和冷却装置和等离子体系统的方法。 装置可以包括容器和与容器相邻的至少一个点火电极。 所述至少一个点火电极的尺寸的总长度大于所述容器通道的长度的10％。 该装置可以包括介质环形容器，具有通过弹簧加载机构朝向容器推动的多个部分的散热器以及容器和散热器之间的热界面。 一种方法可以包括提供具有流速和压力的气体并将气体的一部分流量引导到容器通道中。 气体在通道中被点燃，而流量的剩余部分被引导离开通道。

    Methods and Apparatus for Protecting Plasma Chamber Surfaces
    8.
    发明申请
    Methods and Apparatus for Protecting Plasma Chamber Surfaces 审中-公开
    用于保护等离子体腔体表面的方法和装置

    公开(公告)号：US20110005922A1

    公开(公告)日：2011-01-13

    申请号：US12499453

    申请日：2009-07-08

    申请人： Chiu-Ying Tai ,  Xing Chen ,  Chaolin Hu ,  Andrew Cowe ,  Ali Shajii

    发明人： Chiu-Ying Tai ,  Xing Chen ,  Chaolin Hu ,  Andrew Cowe ,  Ali Shajii

    IPC分类号： C23C14/34

    CPC分类号： C25D11/04 ,  C25D11/026 ,  C25D11/18 ,  C25D11/30 ,  H01J37/32477

    摘要： A method for creating a protective layer over a surface of an object comprising aluminum and magnesium for use in a semiconductor processing system, which includes oxidizing the surface of the object using a plasma electrolytic oxidation process. The method also includes generating a halogen-comprising plasma by exciting a gas comprising a halogen. The method also includes exposing the oxidized surface to the halogen-comprising plasma or excited gas.

    摘要翻译： 一种用于在半导体处理系统中使用的用于在包括铝和镁的物体的表面上形成保护层的方法，其包括使用等离子体电解氧化工艺氧化物体的表面。 该方法还包括通过激发包含卤素的气体产生含卤素的等离子体。 该方法还包括将氧化的表面暴露于含卤素等离子体或激发气体。