公开(公告)号：US07732327B2

公开(公告)日：2010-06-08

申请号：US12239046

申请日：2008-09-26

申请人： Sang-Hyeob Lee ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

发明人： Sang-Hyeob Lee ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

IPC分类号： H01L21/4763

CPC分类号： C23C16/42 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.

摘要翻译： 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 该方法利用浸泡方法和气相沉积方法提供具有显着改善的表面均匀性的钨膜，同时提高生产水平的生产量。 在一个实施例中，提供了一种方法，其包括通过将衬底暴露于硅前体的连续流中而在衬底上沉积钨硅化物层，同时将衬底暴露于钨前体的间歇脉冲。 该方法还提供了将硅衬底暴露于硅/钨前体流速比大于1，例如约2，约3或更大的硅和钨前体。 随后，该方法提供在硅化钨层上沉积氮化钨层，在钨氮化物层上沉积钨成核层，并在钨成核层上沉积钨体层。

公开(公告)号：US20090081866A1

公开(公告)日：2009-03-26

申请号：US12239046

申请日：2008-09-26

申请人： SANG-HYEOB LEE ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

发明人： SANG-HYEOB LEE ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

IPC分类号： H01L21/44

CPC分类号： C23C16/42 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.

摘要翻译： 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 该方法利用浸泡方法和气相沉积方法提供具有显着改善的表面均匀性的钨膜，同时提高生产水平的生产量。 在一个实施例中，提供了一种方法，其包括通过将衬底暴露于硅前体的连续流中而在衬底上沉积钨硅化物层，同时将衬底暴露于钨前体的间歇脉冲。 该方法还提供了将硅衬底暴露于硅/钨前体流速比大于1，例如约2，约3或更大的硅和钨前体。 随后，该方法提供在硅化钨层上沉积氮化钨层，在钨氮化物层上沉积钨成核层，并在钨成核层上沉积钨体层。

公开(公告)号：US07276795B2

公开(公告)日：2007-10-02

申请号：US10899736

申请日：2004-07-27

申请人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

发明人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

IPC分类号： H01L23/48

CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877

摘要： A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

摘要翻译： 第一层氮化钛（TiN）形成在诸如互连通孔的半导体结构上。 然后，在第一TiN层上形成第二TiN层。 第一层TiN是无定形的。 第二层TiN是多晶的，具有混晶粒取向。 最后，在第二层氮化钛上形成铝膜。 可选地，在形成第一层氮化钛的步骤之前，在半导体结构上形成硅化钛层。 根据本发明形成的互连件具有晶粒尺寸大约小于0.25微米的多晶铝膜。

公开(公告)号：US07217661B2

公开(公告)日：2007-05-15

申请号：US11230773

申请日：2005-09-20

申请人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

发明人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

IPC分类号： H01L21/44

CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877

摘要： A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

公开(公告)号：US06774487B2

公开(公告)日：2004-08-10

申请号：US09782498

申请日：2001-02-13

申请人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

发明人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

IPC分类号： H01L2348

CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877

摘要： A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

摘要翻译： 第一层氮化钛（TiN）形成在诸如互连通孔的半导体结构上。 然后，在第一TiN层上形成第二TiN层。 第一层TiN是无定形的。 第二层TiN是多晶的，具有混晶粒取向。 最后，在第二层氮化钛上形成铝膜。 可选地，在形成第一层氮化钛的步骤之前，在半导体结构上形成硅化钛层。 根据本发明形成的互连件具有晶粒尺寸大约小于0.25微米的多晶铝膜。

公开(公告)号：US07737024B2

公开(公告)日：2010-06-15

申请号：US11380622

申请日：2006-04-27

申请人： Wing-Cheong Gilbert Lai ,  Gurtei Singh Sandhu

发明人： Wing-Cheong Gilbert Lai ,  Gurtei Singh Sandhu

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877

摘要： A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

摘要翻译： 第一层氮化钛（TiN）形成在诸如互连通孔的半导体结构上。 然后，在第一TiN层上形成第二TiN层。 第一层TiN是无定形的。 第二层TiN是多晶的，具有混晶粒取向。 最后，在第二层氮化钛上形成铝膜。 可选地，在形成第一层氮化钛的步骤之前，在半导体结构上形成硅化钛层。 根据本发明形成的互连件具有晶粒尺寸大约小于0.25微米的多晶铝膜。

公开(公告)号：US07560816B2

公开(公告)日：2009-07-14

申请号：US11897842

申请日：2007-08-31

申请人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

发明人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

IPC分类号： H01L23/58 ,  H01L29/40

CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877

摘要： A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

摘要翻译： 第一层氮化钛（TiN）形成在诸如互连通孔的半导体结构上。 然后，在第一TiN层上形成第二TiN层。 第一层TiN是无定形的。 第二层TiN是多晶的，具有混晶粒取向。 最后，在第二层氮化钛上形成铝膜。 可选地，在形成第一层氮化钛的步骤之前，在半导体结构上形成硅化钛层。 根据本发明形成的互连件具有晶粒尺寸大约小于0.25微米的多晶铝膜。

公开(公告)号：US06946393B2

公开(公告)日：2005-09-20

申请号：US09782441

申请日：2001-02-13

申请人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

发明人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877

摘要： A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

公开(公告)号：US5866205A

公开(公告)日：1999-02-02

申请号：US764858

申请日：1996-12-13

申请人： Brian A. Vaartstra ,  Wing-Cheong Gilbert Lai

发明人： Brian A. Vaartstra ,  Wing-Cheong Gilbert Lai

IPC分类号： C23C16/34

CPC分类号： C23C16/34

摘要： A method is provided for forming films comprising TiN or Ti--Si--N employing the techniques of chemical vapor deposition to decompose a vapor comprising a compound of the formula Ti�N(R.sup.1)(R.sup.2)!.sub.x �(R.sup.3)N--C(R.sup.4)(R.sup.5)--C(R.sup.6)(R.sup.7)--N(R.sup.8)(R.sup.9)!.sub.y wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.8 and R.sup.9 are (C.sub.1 -C.sub.4) alkyl, each of R.sup.4, R.sup.5, R.sup.6, and R.sup.7 are each H or (C.sub.1 -C.sub.4) alkyl and x and y are 1-3; so as to deposit a film comprising titanium on the surface of a substrate.

摘要翻译： 提供了一种使用化学气相沉积技术形成包含TiN或Ti-Si-N的膜以分解包含式Ti [N（R1）（R2）] x [（R3）NC（R4 ）（R 5）-C（R 6）（R 7）-N（R 8）（R 9）] y其中R 1，R 2，R 3，R 8和R 9各自为（C 1 -C 4）烷基， 和R 7各自为H或（C 1 -C 4）烷基，x和y为1-3; 以便在衬底的表面上沉积包含钛的膜。

公开(公告)号：US20050006774A1

公开(公告)日：2005-01-13

申请号：US10899736

申请日：2004-07-27

申请人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

发明人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877

摘要： A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

摘要翻译： 第一层氮化钛（TiN）形成在诸如互连通孔的半导体结构上。 然后，在第一TiN层上形成第二TiN层。 第一层TiN是无定形的。 第二层TiN是多晶的，具有混晶粒取向。 最后，在第二层氮化钛上形成铝膜。 可选地，在形成第一层氮化钛的步骤之前，在半导体结构上形成硅化钛层。 根据本发明形成的互连件具有晶粒尺寸大约小于0.25微米的多晶铝膜。