公开(公告)号：US07732327B2

公开(公告)日：2010-06-08

申请号：US12239046

申请日：2008-09-26

申请人： Sang-Hyeob Lee ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

发明人： Sang-Hyeob Lee ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

IPC分类号： H01L21/4763

CPC分类号： C23C16/42 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.

摘要翻译： 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 该方法利用浸泡方法和气相沉积方法提供具有显着改善的表面均匀性的钨膜，同时提高生产水平的生产量。 在一个实施例中，提供了一种方法，其包括通过将衬底暴露于硅前体的连续流中而在衬底上沉积钨硅化物层，同时将衬底暴露于钨前体的间歇脉冲。 该方法还提供了将硅衬底暴露于硅/钨前体流速比大于1，例如约2，约3或更大的硅和钨前体。 随后，该方法提供在硅化钨层上沉积氮化钨层，在钨氮化物层上沉积钨成核层，并在钨成核层上沉积钨体层。

公开(公告)号：US20080206987A1

公开(公告)日：2008-08-28

申请号：US12021798

申请日：2008-01-29

申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

IPC分类号： H01L21/44

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

摘要： Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.

摘要翻译： 本发明的实施方案提供了诸如金属钨和氮化钨的含钨材料的气相沉积方法。 在一个实施例中，提供了一种用于形成含钨材料的方法，其包括将衬底定位在包含盖板的处理室内，将盖板加热至约120℃至约180℃的温度 在预成核浸泡工艺期间将衬底暴露于还原气体，以及在处理室内的第一原子层沉积工艺期间在衬底上沉积第一钨成核层。 该方法还提供了在气相沉积工艺期间在第一钨成核层上沉积氮化钨层，在处理室内的第二原子层沉积工艺期间在氮化钨层上沉积第二钨成核层，并将衬底暴露于另一个 在后成核浸泡过程中还原气体。

公开(公告)号：US20080202425A1

公开(公告)日：2008-08-28

申请号：US12021825

申请日：2008-01-29

申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

IPC分类号： C23C16/06

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

摘要翻译： 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

公开(公告)号：US08821637B2

公开(公告)日：2014-09-02

申请号：US12021825

申请日：2008-01-29

申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

摘要翻译： 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

公开(公告)号：US20130109172A1

公开(公告)日：2013-05-02

申请号：US13660463

申请日：2012-10-25

申请人： JOSHUA COLLINS ,  Murali K. Narasimhan ,  Jingjing Liu ,  Sang-Hyeob Lee ,  Kai Wu ,  Avgerinos V. Gelatos

发明人： JOSHUA COLLINS ,  Murali K. Narasimhan ,  Jingjing Liu ,  Sang-Hyeob Lee ,  Kai Wu ,  Avgerinos V. Gelatos

IPC分类号： H01L21/768

CPC分类号： H01L21/76876 ,  H01L21/743 ,  H01L21/76814 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53266 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.

摘要翻译： 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 在一个实施例中，在基板上形成含钨材料的方法包括在设置在基板上的电介质层上形成含有氮化钛的粘合层，在粘合层上形成氮化钨中间层，其中氮化钨中间层 含有氮化钨和碳。 该方法还包括在热退火过程中（例如，从约700℃至小于1000℃的温度）通过热分解从氮化钨中间层形成钨阻挡层（例如，钨或钨 - 碳材料） ）。 随后，该方法包括任选地在钨阻挡层上形成成核层，任选地在浸泡过程期间将钨阻挡层和/或成核层暴露于还原剂，以及在钨阻挡层上或之上形成钨体层，以及 /或成核层。

公开(公告)号：US08865594B2

公开(公告)日：2014-10-21

申请号：US13415727

申请日：2012-03-08

申请人： Sang-Hyeob Lee ,  Sang Ho Yu ,  Kai Wu

发明人： Sang-Hyeob Lee ,  Sang Ho Yu ,  Kai Wu

IPC分类号： H01L21/44 ,  C23C16/455 ,  H01L21/285 ,  C23C16/56 ,  H01L21/768 ,  C23C16/02 ,  C23C16/34 ,  H01L27/108

CPC分类号： C23C16/0272 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76846 ,  H01L27/10891

摘要： The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer.

摘要翻译： 本发明提供了一种在衬底上形成膜堆叠的方法，包括进行含硅气体保温工艺以在衬底上形成含硅层，与含硅层反应以在衬底上形成硅化钨层，沉积 氮化硅层，使用来自远程等离子体的活性氮物质进行氮化处理，并将导电体层直接沉积在氮化钨层上。

公开(公告)号：US07157798B1

公开(公告)日：2007-01-02

申请号：US10984126

申请日：2004-11-08

申请人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

发明人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

IPC分类号： H01L23/48

CPC分类号： H01L21/76856 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76889

摘要： A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.

摘要翻译： 描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。 该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。 还描述了在难熔金属沉积之前减少和清洁铜线的方法。 还描述了使用体积沉积形成较厚难熔金属层的方法。

公开(公告)号：US20130168864A1

公开(公告)日：2013-07-04

申请号：US13633502

申请日：2012-10-02

申请人： Sang-Hyeob Lee ,  Joshua Collins

发明人： Sang-Hyeob Lee ,  Joshua Collins

IPC分类号： H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76876 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/768 ,  H01L21/76877 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.

公开(公告)号：US20050031786A1

公开(公告)日：2005-02-10

申请号：US10649351

申请日：2003-08-26

申请人： Sang-Hyeob Lee ,  Karl Levy ,  Aaron Fellis ,  Panya Wongsenakhum ,  Juwen Gao ,  Joshua Collins ,  Kaihan Ashtiani ,  Junghwan Sung ,  Lana Chan

发明人： Sang-Hyeob Lee ,  Karl Levy ,  Aaron Fellis ,  Panya Wongsenakhum ,  Juwen Gao ,  Joshua Collins ,  Kaihan Ashtiani ,  Junghwan Sung ,  Lana Chan

IPC分类号： H01L21/283 ,  H01L21/285 ,  H01L21/768 ,  C23C16/00

CPC分类号： H01L21/28562 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  Y10S438/902

摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.

摘要翻译： 通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。 该方法的每个循环提供了一个或多个钨膜的单层。 该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。

公开(公告)号：US06358789B2

公开(公告)日：2002-03-19

申请号：US09736416

申请日：2000-12-15

申请人： Sang-Hyeob Lee

发明人： Sang-Hyeob Lee

IPC分类号： H01L218242

CPC分类号： H01L21/02323 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02337 ,  H01L21/28568 ,  H01L21/3143 ,  H01L21/31625 ,  H01L21/31683 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/90

摘要： A semiconductor device for use in a memory cell includes an active matrix, a capacitor structure, formed on top of the active matrix, an intermediate dielectric (IMD) layer formed on the capacitor structure and a barrier layer formed on the IMD layer, wherein the barrier layer includes a TiO2 layer and an Al2O3 layer. Since the Al2O3 layer is obtained by oxidizing the Ti1-xAlxN layer, the Al2O3 layer has a structure very dense. Therefore, the barrier layer prevents a capacitor structure from hydrogen damages caused by the formation of another IMD layer or a passivation layer during the following processes.

摘要翻译： 用于存储单元的半导体器件包括形成在有源矩阵顶部的有源矩阵，电容器结构，形成在电容器结构上的中间介质（IMD）层和形成在IMD层上的势垒层，其中， 阻挡层包括TiO 2层和Al 2 O 3层。 由于通过氧化Ti1-xAlxN层获得Al 2 O 3层，所以Al 2 O 3层具有非常致密的结构。 因此，阻挡层防止电容器结构在后续工艺中由形成另一IMD层或钝化层引起的氢损伤。