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公开(公告)号:US20100248427A1
公开(公告)日:2010-09-30
申请号:US12717573
申请日:2010-03-04
申请人: Wing-Jin WU , Ku-Feng YANG , Wen-Chih CHIOU
发明人: Wing-Jin WU , Ku-Feng YANG , Wen-Chih CHIOU
CPC分类号: H01L21/561 , H01L21/6835 , H01L21/76898 , H01L23/3121 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L24/95 , H01L25/50 , H01L29/0657 , H01L2221/68318 , H01L2221/68345 , H01L2224/13009 , H01L2224/13099 , H01L2224/131 , H01L2224/13147 , H01L2224/81001 , H01L2224/81801 , H01L2224/81894 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/0001 , H01L2924/00011 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00 , H01L2224/0401
摘要: A method of handling a thin wafer includes forming a support structure at the edge of a thinned wafer that is encapsulated by a protection layer. The support structure can be an adhesive layer enclosing the protection layer, a dielectric-filled trench embedded in the thinned wafer and surrounding the protection layer, or a housing affixing the edge of the thinned wafer.
摘要翻译: 处理薄晶片的方法包括在由保护层封装的薄化晶片的边缘处形成支撑结构。 支撑结构可以是包围保护层的粘合剂层,嵌入在薄化晶片中并围绕保护层的介电填充沟槽或者固定薄化晶片的边缘的壳体。