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公开(公告)号：US20240011182A1
公开(公告)日：2024-01-11
申请号：US18253757
申请日：2022-09-20
发明人： Yang LI
摘要： Embodiments of the present disclosure disclose an acquisition equipment and a method for acquiring a nitrogen-doped silicon melt, and a system for manufacturing a nitrogen-doped monocrystalline silicon. The acquisition equipment comprises: a granulation apparatus, which is configured to prepare a plurality of polysilicon particles with uniform particles sizes using polysilicon feedstock blocks; a reaction apparatus, which is configured to enable the plurality of polysilicon particles and nitrogen gas to be subjected to chemical reaction to obtain a plurality of reaction particles, wherein silicon nitride is formed in surface layer of each of the plurality of polysilicon particles by the chemical reaction such that each of the plurality of reaction particles includes a polysilicon core and a silicon nitride coating on the polysilicon core; a melting apparatus, which is configured to melt the plurality of reaction particles to obtain the nitrogen-doped silicon melt comprising silicon atoms and nitrogen atoms.
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2.发明公开公开(公告)号：US20240271318A1
公开(公告)日：2024-08-15
申请号：US18571398
申请日：2022-09-30
发明人： Fan CHEN , Pengju ZHANG , Chaochao GUO
CPC分类号： C30B15/26 , C30B15/002 , C30B15/02 , C30B29/06 , C30B35/005 , C30B35/007
摘要： A silicon material processing apparatus includes a feed assembly, a scanning assembly, a controller, and a loading assembly. The feed assembly is used for conveying a silicon material and includes a feeding area, a scanning area, and a loading area sequentially arranged along the conveying direction. The silicon material to be conveyed is added to the feeding assembly in the feeding area. The scanning assembly is arranged correspondingly to the scanning area and is, used for collecting silicon material information of a silicon material that is located in the scanning area. The silicon material information includes one or more of a shape characteristics and a size characteristics of the silicon material. The controller is connected with the scanning assembly and is, used for generating a loading strategy according to the silicon material information.
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公开(公告)号：US20240337043A1
公开(公告)日：2024-10-10
申请号：US18696822
申请日：2022-09-30
发明人： Qinhu MAO
摘要： A heater assembly is for a single crystal puller. The single crystal puller includes a puller body. A crucible assembly is arranged in the puller body, and a bottom of the crucible assembly is supported by a support structure. The support structure includes a support shaft, and the crucible assembly is driven by the support shaft to rotate. The heater assembly includes a heating part and a conductive part. The heating part covers an outer surface of the crucible assembly, and the heating part is able to rotate synchronously with the crucible assembly. The heating part includes a plurality of connecting electrodes. The conductive part is arranged on the support shaft, and includes a plurality of annular conductive members connected to the plurality of connecting electrodes respectively. External electrodes are connected to the plurality of annular conductive members respectively.
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4.发明公开公开(公告)号：US20240271317A1
公开(公告)日：2024-08-15
申请号：US18568227
申请日：2022-09-30
发明人： Zhenliang SONG , Shaojie SONG
CPC分类号： C30B15/203 , C30B15/10 , C30B29/06
摘要： A crystal puller for pulling a single-crystal silicon ingot includes a cylindrical heating apparatus and a cylindrical cooling apparatus. The heating apparatus is located above a water cooling jacket, and is configured such that a single-crystal silicon ingot enters a heat treatment chamber defined by the heating apparatus to be heat-treated when the single-crystal silicon ingot moves upwardly in a vertical direction. The cooling apparatus is located above the heating apparatus, and is configured such that the heat-treated single-crystal silicon ingot enters a cooling chamber defined by the cooling apparatus to be cool-treated when the single-crystal silicon ingot continues moving upwardly in the vertical direction.
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5.发明公开公开(公告)号：US20240266198A1
公开(公告)日：2024-08-08
申请号：US18568629
申请日：2022-10-21
发明人： Leilei WANG , Xun LAN , Housheng LI
IPC分类号： H01L21/68 , G01B11/27 , H01L21/683
CPC分类号： H01L21/681 , G01B11/272 , H01L21/6838
摘要： A method is for positioning a center of a V-type notch of a wafer. The method includes: determining, based on collected edge data of a V-type notch of a wafer, a center of a concentric circle corresponding to edges of the V-type notch; and judging, based on a position relation between the center and a set reference scale line, whether the V-type notch is at a preset target center position. The method also includes determining, based on the position relation between the center and the set reference scale line, a rotation direction and rotation angle of the wafer when the V-type notch is out of the preset target center position; and driving, according to the rotation direction and rotation angle of the wafer, the wafer to rotate until the V-type notch is rotated to the preset target center position.
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公开(公告)号：US20240263343A1
公开(公告)日：2024-08-08
申请号：US18570788
申请日：2022-09-21
发明人： Peng HENG
摘要： A quartz crucible and a crystal puller for growing a crystal ingot are provided. The quartz crucible includes: a crucible base made of silicon dioxide material; and a coating plated on a part of an inner surface of the crucible base, the coating is configured to prevent oxygen atoms of a coated part of the crucible base from precipitating during the growing process of the crystal ingot; a plating area of the coating gradually decreases along a direction from an opening of the crucible base to a bottom of the crucible base.
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公开(公告)号：US20240279841A1
公开(公告)日：2024-08-22
申请号：US18567705
申请日：2022-09-30
发明人： Wenwu YANG
摘要： A heater that may be included in a single crystal growing apparatus includes a heating body. The heating body has a bowl shape and has a bottom having an opening. The heating body is divided into a first heating zone and a second heating zone in the circumferential direction. The first heating zone includes a first main heating area and the second heating zone includes a second main heating area. The first main heating area and the second main heating area are located at different position with different heights in the axial direction of the heating body.
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公开(公告)号：US20240263351A1
公开(公告)日：2024-08-08
申请号：US18564904
申请日：2022-10-28
发明人： Zhenliang SONG , Shaojie SONG
摘要： A method for growing a single-crystal silicon ingot and a single-crystal silicon ingot includes, during an initial stage of body growing process of the single-crystal silicon ingot, controlling an initial height of a horizontal magnetic field to be higher than a free surface of silicon melt. The method further includes, during the body growing process of the single-crystal silicon ingot, adjusting the horizontal magnetic field on convection intensity of the silicon melt to make oxygen concentration of the single-crystal silicon ingot to be decreased in an axial direction from a head portion to a tail portion.
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9.发明公开公开(公告)号：US20240035197A1
公开(公告)日：2024-02-01
申请号：US18258769
申请日：2022-09-29
发明人： Wanwan ZHANG , Yonghee MUN
摘要： The present disclosure discloses a crystal puller, a method for manufacturing a monocrystalline silicon ingot and a mono-crystalline silicon ingot. The crystal puller includes a pulling mechanism; a first heat treater which is configured to perform heat treatment on the mono-crystalline silicon ingot with a first heat treatment temperature at which BMD in the mono-crystalline silicon ingot be ablated; and a second heat treater which is configured to perform heat treatment on the monocrystalline silicon ingot with a second heat treatment temperature at which formation of BMD in the mono-crystalline silicon ingot is induced. The pulling mechanism is further configured to move the monocrystalline ingot along the direction of crystal growth to a position where heat treatment is performed on a tail section by the first heat treater and heat treatment is performed on a head section by the second heat treater.
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公开(公告)号：US20240018689A1
公开(公告)日：2024-01-18
申请号：US18256377
申请日：2022-09-28
发明人： Peng Xu , Wanwan Zhang
摘要： Embodiments of the present disclosure disclose a crystal puller for pulling a monocrystalline silicon ingot comprising a heater configured with a heat treatment chamber. The heater is arranged in the crystal puller such that the monocrystalline silicon ingot is accessible to the heat treatment chamber by moving along a direction of crystal growth.
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