公开(公告)号：US06916717B2

公开(公告)日：2005-07-12

申请号：US10137383

申请日：2002-05-03

申请人： Hao Li ,  Ravindranath Droopad ,  Daniel S. Marshall ,  Yi Wei ,  Xiao M. Hu ,  Yong Liang

发明人： Hao Li ,  Ravindranath Droopad ,  Daniel S. Marshall ,  Yi Wei ,  Xiao M. Hu ,  Yong Liang

IPC分类号： H01L33/00 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L21/316 ,  H01L31/10 ,  H01S5/026 ,  H01L21/336

CPC分类号： C30B25/18 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31604 ,  H01L21/31691

摘要： High quality monocrystalline metal oxide layers are grown on a monocrystalline substrate such as a silicon wafer. The monocrystalline metal oxide is grown on the silicon substrate at a temperature low enough to prevent deleterious and simultaneous oxidation of the silicon substrate. After a layer of 1-3 monolayers of the monocrystalline oxide is grown, the growth is stopped and the crystal quality of that layer is improved by a higher temperature anneal. Following the anneal, the thickness of the layer can be increased by restarting the low temperature growth. An amorphous silicon oxide layer can be grown at the interface between the monocrystalline metal oxide layer and the silicon substrate after the thickness of the monocrystalline oxide reaches a few monolayers.

摘要翻译： 高品质单晶金属氧化物层生长在诸如硅晶片的单晶衬底上。 在硅衬底上生长单晶金属氧化物，其温度足够低以防止硅衬底的有害和同时的氧化。 在生长单层氧化物的1-3层单层之后，停止生长，并且通过较高温度退火来改善该层的晶体质量。 退火后，通过重新开始低温生长可以提高层的厚度。 在单晶氧化物的厚度达到几个单层之后，可以在单晶金属氧化物层和硅衬底之间的界面处生长非晶氧化硅层。