摘要:
A charge pump circuit includes a first comparator, a PMOS tuner, a first current mirror, a first NMOS transistor, a first PMOS switch, an NMOS tuner, a second current mirror, a first PMOS transistor and a first NMOS switch. The first PMOS switch is coupled between the PMOS tuner and a first output PMOS transistor of the first current mirror, thus the parasitic capacitor formed between the gate and the drain of the first PMOS switch, the parasitic capacitor formed between the gate and the source of the first output PMOS transistor, and the parasitic capacitor formed between the gate and the drain of the first output PMOS transistor are equivalently coupled in series, lowering the capacitance between the PMOS tuner and the charge pump output, and reducing the clock feed through and the charge injection effect in the charge pump circuit.
摘要:
The input and output interface in the present invention can includes following components. A first circuit and a second circuit are placed. Means for switching a coupling between the two circuits is used. Grounding means is employed for setting the first terminal to a ground connection. Triggering means is used for triggering the grounding means and the switching means. The method for interfacing input and output between a first circuit and a second circuit includes the steps as follows. At first, an output disable signal of the first circuit is detected. Then a first terminal is isolated from a second terminal. The first terminal is an input and output terminal of the first circuit and the second terminal is an input and output terminal of the second circuit. Next, the first terminal is grounded. The first terminal is then floated. Finally, the first terminal and the second terminal is coupled for the first circuit to receive an output signal from the second circuit.
摘要:
A capacitor structure has a plurality of stacked conductive patterns, and each conductive pattern has a closed conductive ring, a plurality of major conductive bars arranged in parallel and electrically to the closed conductive ring, and a plurality of minor conductive bars arranged alternately with the major conductive bars and not electrically connected to the closed conductive ring. The major conductive bars and the minor conductive bars of an odd layer conductive pattern are respectively corresponding to the minor conductive bars and the major conductive bars of an even layer conductive pattern.
摘要:
A capacitor structure has a plurality of stacked conductive patterns, and each conductive pattern has a closed conductive ring, a plurality of major conductive bars arranged in parallel and electrically to the closed conductive ring, and a plurality of minor conductive bars arranged alternately with the major conductive bars and not electrically connected to the closed conductive ring. The major conductive bars and the minor conductive bars of an odd layer conductive pattern are respectively corresponding to the minor conductive bars and the major conductive bars of an even layer conductive pattern.
摘要:
An address-translation method is provided for efficiently translating effective addresses into physical addresses in X-86 based computers. In this method and system, when an effective address is generated, a segment base is then generated from a segment-descriptor cache memory in response to a selector address from the microcode. The segment base is added to the effective address to thereby obtain a linear address and a carry from the addition of the low-order portions of the segment base and the effective address. This carry is added to the high-order portion of the effective address to thereby obtain a comparison effective address. The comparison effective address and the segment base are then compared with a set of predetermined address values in a Translation Lookaside Buffer. If there is a match, a corresponding page base will be generated. The page base is then combined with the low-order portion of the linear address to thereby obtain the desired physical address. This address-translation method and system can speed up the access to the main memory since the address-translation and the linear address computation are proceeded in parallel, and also allow an increase in the hit ratio since the comparison process carried out in the Translation Lookaside Buffer involves the segment base from the segment-descriptor cache memory.
摘要:
The present invention provides a method and apparatus for detecting voltage drops on an IC chip. The device operates by using a reference voltage to detect the voltage range of a local voltage. A multiple number of reference voltages are used (or predetermined) between the reference voltage and the ground voltage. The voltage drop detecting device includes a multiple number of inverters having to the local voltage as its input. The inverters each have a trigger voltage corresponding to one of the reference positions. When the local voltage is smaller than the trigger voltage of the inverter, a low to high voltage switching is present at the output. A multiple number of positive-edge triggering devices, coupled to the reference voltage as one of its inputs, are each coupled to one of the inverters. A corresponding inverter presents a low to high switching to make the reference voltage present at the corresponding output terminal. The voltage range of the local voltage is detected at the output terminals.
摘要:
A charge pump circuit includes a first comparator, a PMOS tuner, a first current mirror, a first NMOS transistor, a first PMOS switch, an NMOS tuner, a second current mirror, a first PMOS transistor and a first NMOS switch. The first PMOS switch is coupled between the PMOS tuner and a first output PMOS transistor of the first current mirror, thus the parasitic capacitor formed between the gate and the drain of the first PMOS switch, the parasitic capacitor formed between the gate and the source of the first output PMOS transistor, and the parasitic capacitor formed between the gate and the drain of the first output PMOS transistor are equivalently coupled in series, lowering the capacitance between the PMOS tuner and the charge pump output, and reducing the clock feed through and the charge injection effect in the charge pump circuit.
摘要:
The integrated circuits array with latch up protection includes an active array and a guard array. The active array contains a plurality of integrated circuits devices having operational functions. The guard array abutting an outer peripheral portion of the active array contains a plurality of transistors for protecting the plurality of integrated circuits devices from latch up. In general, the active array can be functional circuits like a memory array or a read only memory (ROM) array. The plurality of transistors in the guard array can be formed simultaneously with transistors in the active array and have same structure with the transistors.
摘要:
An apparatus for branch detecting a loop operation in a microprocessor. The apparatus includes a register, an ALU port, a predetector, an ALU, a flag generator and a branch detector. The register is provided for storing a loop information. Through the ALU port, the loop information is sent to the predetector and is predetected therein whenever the loop operation is about to proceed. A predetected result is then generated by the predetected and is sent to the branch detector to determine whether the loop operation has to be terminated. The ALU processes the loop information and updates new loop the register at the same time the predetection and detection tasks are performed by the predetector and the branch detector, respectively. The flag generator generates a flag which is independent of the detection and termination of the loop operation.