-
公开(公告)号：US07512926B2
公开(公告)日：2009-03-31
申请号：US11242165
申请日：2005-09-30
Applicant: Bin Hu , Vivek Singh , Yan Borodovsky
Inventor： Bin Hu , Vivek Singh , Yan Borodovsky
CPC classification number: G03F7/70283 , G03F1/32 , G03F1/36 , G03F7/70433 , G03F7/705
Abstract: The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.
-
公开(公告)号：US07438997B2
公开(公告)日：2008-10-21
申请号：US10846403
申请日：2004-05-14
Applicant: Edita Tejnil , Yan Borodovsky
Inventor： Edita Tejnil , Yan Borodovsky
CPC classification number: G03F1/80 , G03F1/28 , G03F1/32 , G03F7/70283 , G03F7/70291 , G03F7/70433
Abstract: Systems and techniques for lithography. In one aspect, a method includes producing a microelectronic device by modulating an intensity and a phase of the zero diffraction order of a radiation with a device including subwavelength features having a pitch dimension smaller than one wavelength of the radiation.
Abstract translation: 光刻系统和技术。 一方面，一种方法包括通过用包括具有小于辐射的一个波长的间距尺寸的亚波长特征的器件来调制辐射的零衍射级的强度和相位来产生微电子器件。
-
公开(公告)号：US07142282B2
公开(公告)日：2006-11-28
申请号：US10688306
申请日：2003-10-17
Applicant: Yan Borodovsky
Inventor： Yan Borodovsky
CPC classification number: G03F7/70408 , G03F7/0035 , G03F7/20 , G03F7/2022 , G03F7/70433
Abstract: A device that includes contacts. In one implementation, a device includes a substantially arbitrary arrangement of contacts. The contacts in the device are defined with a definition characteristic of interference lithography.
Abstract translation: 包含联系人的设备。 在一个实现中，设备包括基本上任意的触点布置。 设备中的触点用干涉光刻的定义特性定义。
-
4.发明申请Composite optical lithography method for patterning lines of significantly different widths 审中-公开复合光刻方法用于图案线显着不同的宽度公开(公告)号：US20050074698A1
公开(公告)日：2005-04-07
申请号：US10681030
申请日：2003-10-07
Applicant: Yan Borodovsky
Inventor： Yan Borodovsky
CPC classification number: G03F7/70408 , G03F7/7045
Abstract: A composite patterning technique may include three lithography processes. A first lithography process forms a periodic pattern of alternating continuous lines of substantially equal width and spaces on a first photoresist. A second lithography process uses a non-interference lithography technique to break continuity of the patterned lines and form portions of desired integrated circuit features. The first photoresist may be developed. A second photoresist is formed over the first photoresist. A third lithography process uses a non-interference lithography technique to expose a pattern on the second photoresist and form remaining desired features of an integrated circuit pattern.
Abstract translation: 复合图案化技术可以包括三个光刻工艺。 第一光刻工艺在第一光致抗蚀剂上形成基本相同宽度和间隔的交替连续线的周期性图案。 第二光刻工艺使用非干涉光刻技术来破坏图案化线的连续性并形成所需集成电路特征的部分。 可以开发第一光致抗蚀剂。 在第一光致抗蚀剂上形成第二光致抗蚀剂。 第三光刻工艺使用非干涉光刻技术来暴露第二光致抗蚀剂上的图案并形成集成电路图案的剩余期望特征。
-
5.发明授权Method and lens arrangement to improve imaging performance of microlithography exposure tool 失效方法和透镜布置，以提高微光刻曝光工具的成像性能
公开(公告)号：US6069739A
公开(公告)日：2000-05-30
申请号：US109299
申请日：1998-06-30
Applicant: Yan Borodovsky , Christof Krautschik
Inventor： Yan Borodovsky , Christof Krautschik
CPC classification number: G02B3/0056 , G02B27/48 , G02B3/0068 , G02B5/04 , G03F7/70583 , G02B2207/117 , Y10S359/90
Abstract: A technique for introducing variable phase delay across portions of a spatially coherent light beam, such as a laser, without changing the focal length of the portions of the beam. A fly's-eye lens array is utilized to distribute the light for a more uniform illumination, but different length air gaps are introduced in the lens elements to provide a variable delay of portions of the beam. In a second scheme, a set of prisms is positioned in the path of the laser beam, in which the shape of the prism introduces variable phase delay across the cross-section of the beam.
Abstract translation: 用于在空间相干光束（例如激光器）的部分上引入可变相位延迟而不改变光束部分的焦距的技术。 利用蝇眼透镜阵列来分配光以获得更均匀的照明，但是在透镜元件中引入不同长度的气隙以提供光束的部分的可变延迟。 在第二方案中，一组棱镜位于激光束的路径中，其中棱镜的形状在横梁的横截面上引入可变相位延迟。
-
Patent Agency Ranking6.发明授权Phase shifting mask having a phase shift that minimizes critical dimension sensitivity to manufacturing and process variance 失效相移掩模具有使关键尺寸对制造和工艺方差的敏感性最小化的相移
公开(公告)号：US5840448A
公开(公告)日：1998-11-24
申请号：US777599
申请日：1996-12-31
Applicant: Yan Borodovsky , Vivek Singh
Inventor： Yan Borodovsky , Vivek Singh
Abstract: A reticle having only one phase delay value for a given wavelength of incident radiation. The reticle includes a first and second region, both transparent to incident radiation. The second region being adjacent to said first region. The incident radiation transmitted by the second region has a phase delay of other than an integer multiple of 90 degrees relative to said incident radiation transmitted by the first region.
Abstract translation: 对于给定波长的入射辐射仅具有一个相位延迟值的光罩。 掩模版包括对入射辐射透明的第一和第二区域。 第二区域与所述第一区域相邻。 由第二区域发射的入射辐射具有相对于由第一区域发射的入射辐射的90度的整数倍的相位延迟。
-
公开(公告)号：US20090148779A1
公开(公告)日：2009-06-11
申请号：US12317196
申请日：2008-12-19
Applicant: Bikram Baidya , Vivek Singh , Yan Borodovsky
Inventor： Bikram Baidya , Vivek Singh , Yan Borodovsky
CPC classification number: G03F1/36
Abstract: The present invention discloses a mask including: a first region near a corner of a feature, the first region including a first element, the first element being transparent to a light, the first element having a side that is smaller than a wavelength of said light; a second region near the corner of the feature, the second region including a second element, the second element being transparent to the light, the second element having a side that is smaller than the wavelength of the light; and a third region near the corner of the feature, the third region including a third element, the third element being opaque to the light, the third element having a side that is smaller than the wavelength of the light.
-
公开(公告)号：US07245352B2
公开(公告)日：2007-07-17
申请号：US10895651
申请日：2004-07-20
Applicant: Yan Borodovsky , Ilya Grodnensky
Inventor： Yan Borodovsky , Ilya Grodnensky
CPC classification number: G03F7/70633 , G03F9/7084
Abstract: Systems and techniques for alignment with latent images. In one implementation, a method includes detecting a location of a latent image on a substrate, repositioning the substrate based on the detected location of the latent image, and patterning the substrate.
Abstract translation: 与潜像对齐的系统和技术。 在一个实施方案中，一种方法包括检测底物上的潜像的位置，基于检测到的潜像的位置重新定位衬底，以及图案化衬底。
-
公开(公告)号：US20050255388A1
公开(公告)日：2005-11-17
申请号：US10846403
申请日：2004-05-14
Applicant: Edita Tejnil , Yan Borodovsky
Inventor： Edita Tejnil , Yan Borodovsky
CPC classification number: G03F1/80 , G03F1/28 , G03F1/32 , G03F7/70283 , G03F7/70291 , G03F7/70433
Abstract: Systems and techniques for lithography. In one aspect, a method includes producing a microelectronic device by modulating an intensity and a phase of the zero diffraction order of a radiation with a device including subwavelength features having a pitch dimension smaller than one wavelength of the radiation.
Abstract translation: 光刻系统和技术。 一方面，一种方法包括通过用包括具有小于辐射的一个波长的间距尺寸的亚波长特征的器件来调制辐射的零衍射级的强度和相位来产生微电子器件。
-
10.发明申请Composite optical lithography method for patterning lines of substantially equal width 审中-公开用于构图基本上相等宽度的线的复合光刻法公开(公告)号：US20050073671A1
公开(公告)日：2005-04-07
申请号：US10681031
申请日：2003-10-07
Applicant: Yan Borodovsky
Inventor： Yan Borodovsky
CPC classification number: G03F7/2022 , G03F7/203 , G03F7/70408
Abstract: A composite patterning technique may include two lithography processes. A first lithography process may use interference lithography to form a continuous pattern of lines of substantially equal width on a photoresist. A second lithography process may use one or more non-interference lithography techniques, such as optical lithography, imprint lithography and electron-beam lithography, to break continuity of the patterned lines and form desired integrated circuit features.
Abstract translation: 复合图案化技术可以包括两个光刻工艺。 第一光刻工艺可以使用干涉光刻在光致抗蚀剂上形成基本相等宽度的线的连续图案。 第二光刻工艺可以使用一种或多种非干涉光刻技术，例如光刻，压印光刻和电子束光刻，以破坏图案化线的连续性并形成所需的集成电路特征。
-
-
-
-
-
-
-
-
-
Search Results
35
records
(took 0.015 seconds)
