公开(公告)号：US08168539B2

公开(公告)日：2012-05-01

申请号：US11994339

申请日：2006-06-23

申请人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

发明人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

IPC分类号： H01L21/44

CPC分类号： C23C16/14 ,  C23C16/45527 ,  H01L21/28562 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76877

摘要： A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed. The tungsten film is formed through a process in which a silicon-containing gas is delivered to a wafer M placed within a processing container 14 and a process executed after the silicon-containing gas supply process, in which a first tungsten film 70 is formed by alternately executing multiple times, a tungsten-containing gas supply step for supplying a tungsten-containing gas and a hydrogen compound gas supply step for supplying a hydrogen compound gas with no silicon content with a purge step in which an inert gas is supplied into the processing container and/or an evacuation step for evacuating the processing container executed between the tungsten-containing gas supply step and the hydrogen compound gas supply step.

摘要翻译： 形成了与通过现有技术中形成的钨膜相比，具有比其阻挡层更低的电阻率和较低的氟浓度的钨膜，其与通过相关技术形成的钨膜相比，以高可靠性粘附到阻挡层。 通过将含硅气体输送到放置在处理容器14内的晶片M和在含硅气体供给工序之后进行的工序，形成钨膜，其中第一钨膜70由 交替执行多次，用于提供含钨气体的含钨气体供给步骤和用于向不加入硅的氢化合物气体供给氢化合物气体的氢化合物气体供给步骤，其中向所述处理中供给惰性气体的净化步骤 容器和/或排气步骤，用于抽空在含钨气体供给步骤和氢气复合气体供给步骤之间执行的处理容器。

公开(公告)号：US20070254101A1

公开(公告)日：2007-11-01

申请号：US11661126

申请日：2005-08-25

申请人： Tatsuya Handa ,  Yasushi Aiba

发明人： Tatsuya Handa ,  Yasushi Aiba

IPC分类号： C23C16/458

CPC分类号： H01L21/67115 ,  C23C16/45521 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/6875

摘要： Film forming equipment (20) is provided with a treatment container (22), a gas supplying system for supplying the container with a treatment gas including a film forming gas, and an exhaust system for exhausting the atmosphere in the container. In the treatment container, a placing table (46) having a placing plane for placing a flat board shaped body to be treated (W) is arranged. The body to be treated on the placing table is heated by a heater (80). A clamping apparatus (56) is provided to abut/separate to and from a surface peripheral part of the body to be treated, so as to press/release the body to be treated on and from the placing table. On the placing plane of the placing table, a suction structure (92) having a recessed part (94) is formed for temporarily sucking the body to be treated by pressure difference, by forming a substantially hermetic space between the placing plane and the rear plane of the body to be treated.

摘要翻译： 成膜设备（20）设置有处理容器（22），用于向容器供应包括成膜气体的处理气体的气体供给系统和用于排出容器中的气氛的排气系统。 在处理容器中设置有具有用于放置待处理的平板状体（W）的放置面的放置台（46）。 在台面上待处理的身体由加热器（80）加热。 夹持装置（56）设置成与要处理的身体的表面周边部分邻接/分离，以便将待处理的身体按压/释放在放置台上。 在放置台的放置面上，形成具有凹部（94）的吸引结构（92），用于通过压力差临时吸取被处理体，通过在放置面和后平面之间形成大致密封的空间 的身体要被治疗。

公开(公告)号：US20090302024A1

公开(公告)日：2009-12-10

申请号：US12085668

申请日：2006-11-28

申请人： Yasushi Aiba

发明人： Yasushi Aiba

IPC分类号： F27B5/16 ,  H05B3/68 ,  G05D7/00

CPC分类号： H01L21/67115 ,  C23C16/24 ,  C23C16/482 ,  H01L21/324

摘要： The present invention is a heat processing method comprising: a placement step in which an object to be processed is placed on a stage disposed in a processing vessel whose inside atmosphere is capable of being discharged; and a heat processing step that is performed after the placement step, in which a temperature of the object to be processed is elevated to a predetermined set temperature and is maintained thereat by a heating unit that is activated by a power supply, and in which a predetermined gas is caused to flow into the processing vessel so as to perform a predetermined heat process to the object to be processed; wherein, immediately before the heat processing step, there is performed at least once a brief large-power supply step, in which a power larger than that to be supplied to the heating unit for maintaining the temperature of the object to be processed in the heat processing step is briefly supplied to the heating unit.

摘要翻译： 本发明是一种热处理方法，包括：放置步骤，其中待处理物体放置在设置在内部气氛能够排出的处理容器中的台上; 以及在所述放置步骤之后执行的加热步骤，其中待处理物体的温度升高到预定设定温度，并且由通过电源激活的加热单元保持在该加热步骤中，并且其中 使预定气体流入处理容器，以对被处理物体进行预定的热处理; 其中，在热处理步骤之前，进行至少一次短暂的大电力供给步骤，其中比供给加热单元的功率大的功率用于保持待加热物体的温度在热量 将加工步骤简单地供给到加热单元。

公开(公告)号：US06387445B1

公开(公告)日：2002-05-14

申请号：US09646038

申请日：2000-09-13

申请人： Yasushi Aiba ,  Yukio Koike

发明人： Yasushi Aiba ,  Yukio Koike

IPC分类号： C23C1608

CPC分类号： C23C16/0281 ,  C23C16/14 ,  H01L21/28556 ,  H01L21/28568

摘要： A tungsten layer is formed on the surface of an object to be treated (e.g., a semiconductor wafer), supplying a process gas which includes a material gas of a tungsten fluoride (e.g., WF6) gas and a reducing gas (e.g., H2 gas) for reducing the material gas. In this case, an intermediate tungsten film forming step is carried out between a nuclear crystalline film forming step of forming a nuclear crystalline film of tungsten on the surface of the object and a main tungsten film forming step of forming a main tungsten film on the nuclear crystalline film. At the intermediate tungsten film forming step, an intermediate tungsten film is formed while the flow ratio of the material gas to the reducing gas is smaller than that at the main tungsten film forming step. Thus, the incubation time T2 after the deposition of the nuclear crystalline film is removed, so that it is possible to enhance the whole mean deposition rate and to improve the uniformity of the thickness between objects to be processed.

摘要翻译： 在待处理物体的表面（例如，半导体晶片）上形成钨层，供给包括氟化钨（例如WF 6）气体和还原气体（例如，H 2气体）的原料气体的处理气体 ）用于减少原料气体。 在这种情况下，中间钨膜形成步骤是在物体表面上形成钨的核晶体膜的核晶形成步骤和在核上形成主钨膜的主钨膜形成步骤之间进行的 结晶膜。 在中间钨膜形成步骤中，形成中间钨膜，同时原料气体与还原气体的流量比主钨膜形成步骤小。 因此，去除沉积核晶体膜后的孵育时间T2，从而可以提高整个平均沉积速率并提高待处理物体之间厚度的均匀性。

公开(公告)号：US20090045517A1

公开(公告)日：2009-02-19

申请号：US11994339

申请日：2006-06-23

申请人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

发明人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

IPC分类号： H01L23/52 ,  C23C16/44 ,  H01L21/44

CPC分类号： C23C16/14 ,  C23C16/45527 ,  H01L21/28562 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76877

摘要： A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed.The tungsten film is formed through a process in which a silicon-containing gas is delivered to a wafer M placed within a processing container 14 and a process executed after the silicon-containing gas supply process, in which a first tungsten film 70 is formed by alternately executing multiple times, a tungsten-containing gas supply step for supplying a tungsten-containing gas and a hydrogen compound gas supply step for supplying a hydrogen compound gas with no silicon content with a purge step in which an inert gas is supplied into the processing container and/or an evacuation step for evacuating the processing container executed between the tungsten-containing gas supply step and the hydrogen compound gas supply step.

摘要翻译： 形成了与通过现有技术中形成的钨膜相比，具有比其阻挡层更低的电阻率和较低的氟浓度的钨膜，其与通过相关技术形成的钨膜相比，以高可靠性粘附到阻挡层。 通过将含硅气体输送到放置在处理容器14内的晶片M和在含硅气体供给工序之后进行的工序，形成钨膜，其中第一钨膜70由 交替执行多次，用于提供含钨气体的含钨气体供给步骤和用于向不加入硅的氢化合物气体供给氢化合物气体的氢化合物气体供给步骤，其中向所述处理中供给惰性气体的净化步骤 容器和/或排气步骤，用于抽空在含钨气体供给步骤和氢气复合气体供给步骤之间执行的处理容器。

公开(公告)号：US06625862B2

公开(公告)日：2003-09-30

申请号：US09550015

申请日：2000-04-14

申请人： Morio Kajiyama ,  Sakae Nakatsuka ,  Yasushi Aiba

发明人： Morio Kajiyama ,  Sakae Nakatsuka ,  Yasushi Aiba

IPC分类号： C23C1600

CPC分类号： C23C16/4404 ,  Y10T29/49885 ,  Y10T29/49886

摘要： A wafer processing apparatus (14) has a wafer processing vessel (16). A wafer is mounted on a susceptor (22) included in the wafer processing apparatus. Process gases are supplied to the wafer through a shower head (74) disposed in an upper region within the processing vessel to carry out a predetermined process for processing the wafer. The surfaces of aluminum members (16, 74) employed in the wafer processing apparatus are subjected to an organic mechanical chemical polishing process, a blasting process and an aluminum oxide film forming process in that order. It is difficult for unnecessary films to adhere to the thus treated surfaces and it is difficult for unnecessary films deposited on the thus treated surfaces to come off the surfaces. Consequently, intervals between cleaning operations can be extended and production of particles can be suppressed.

摘要翻译： 晶片处理装置（14）具有晶片处理容器（16）。 将晶片安装在晶片处理装置中包括的基座（22）上。 工艺气体通过设置在处理容器内的上部区域中的喷淋头（74）供应到晶片，以执行用于处理晶片的预定处理。 在晶片处理装置中使用的铝构件（16,74）的表面依次进行有机机械化学抛光处理，喷砂处理和氧化铝膜形成处理。 难以将不需要的膜粘附到如此处理的表面上，并且难以将沉积在如此处理的表面上的不需要的膜从表面脱落。 因此，可以延长清洁操作之间的间隔，并且可以抑制颗粒的产生。

公开(公告)号：US07718005B2

公开(公告)日：2010-05-18

申请号：US11661126

申请日：2005-08-25

申请人： Tatsuya Handa ,  Yasushi Aiba

发明人： Tatsuya Handa ,  Yasushi Aiba

IPC分类号： C23C16/00 ,  C23C16/52

CPC分类号： H01L21/67115 ,  C23C16/45521 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/6875

摘要： Film forming equipment (20) is provided with a treatment container (22), a gas supplying system for supplying the container with a treatment gas including a film forming gas, and an exhaust system for exhausting the atmosphere in the container. In the treatment container, a placing table (46) having a placing plane for placing a flat board shaped body to be treated (W) is arranged. The body to be treated on the placing table is heated by a heater (80). A clamping apparatus (56) is provided to abut/separate to and from a surface peripheral part of the body to be treated, so as to press/release the body to be treated on and from the placing table. On the placing plane of the placing table, a suction structure (92) having a recessed part (94) is formed for temporarily sucking the body to be treated by pressure difference, by forming a substantially hermetic space between the placing plane and the rear plane of the body to be treated.

摘要翻译： 成膜设备（20）设置有处理容器（22），用于向容器供应包括成膜气体的处理气体的气体供给系统和用于排出容器中的气氛的排气系统。 在处理容器中设置有具有用于放置待处理的平板状体（W）的放置面的放置台（46）。 在台面上待处理的身体由加热器（80）加热。 夹持装置（56）设置成与要处理的身体的表面周边部分邻接/分离，以便将待处理的身体按压/释放在放置台上。 在放置台的放置面上，形成具有凹部（94）的吸引结构（92），用于通过压力差临时吸取被处理体，通过在放置面和后平面之间形成大致密封的空间 的身体要被治疗。