公开(公告)号：US06964790B1

公开(公告)日：2005-11-15

申请号：US10030919

申请日：2000-07-13

申请人： Masayuki Nasu ,  Sakae Nakatsuka

发明人： Masayuki Nasu ,  Sakae Nakatsuka

IPC分类号： H01L21/3205 ,  C23C14/14 ,  C23C16/08 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285

CPC分类号： C23C16/14 ,  H01L21/28568

摘要： A deposition method for supplying process gases into an evacuated processing vessel to deposit a metal tungsten film on the surface of an object to be processed. The processing gases include tungsten hexafluoride gas, hydrogen gas, and a reducing gas which has a richer reducing property than that of the hydrogen gas, the amount of the reducing gas being smaller than that of the hydrogen gas. Thus, it is possible to form a metal tungsten film without increasing stress in the film so much even in a low temperature region of about 400° C. and without decreasing a deposition rate so much.

摘要翻译： 一种用于将处理气体供应到真空处理容器中以在待处理物体的表面上沉积金属钨膜的沉积方法。 处理气体包括六氟化钨气体，氢气和比氢气还原性更强的还原气体，还原气体的量比氢气的还原气体少。 因此，即使在约400℃的低温区域中也可以形成金属钨膜，而不会增加膜中的应力，并且不会降低沉积速率。

公开(公告)号：US06599367B1

公开(公告)日：2003-07-29

申请号：US09623574

申请日：2000-09-06

申请人： Sakae Nakatsuka

发明人： Sakae Nakatsuka

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A vacuum process system having a vacuum process container. Located inside the vacuum process container is a supporting table for supporting thereon an object to be processed, a presser member for pressing the top surface of the peripheral portion of the object onto the supporting table, and a shower head facing the supporting table. The shower head has a large number of gas nozzles in the bottom face thereof. The bottom face of the shower head has a facing portion positioned substantially directly above the inner peripheral edge of the presser member and a non-facing portion. The facing portion has nozzles with larger diameters than the non-facing portion or a higher density of nozzles than the non-facing portion.

摘要翻译： 具有真空处理容器的真空处理系统。 位于真空处理容器内的是用于在其上支撑待处理物体的支撑台，用于将物体的周边部分的顶表面按压到支撑台上的压紧构件和面向支撑台的淋浴头。 淋浴头的底面有大量的气体喷嘴。 淋浴头的底面具有基本上位于压紧构件的内周边缘的正上方的面对部分和不面对部分。 面对部分具有比不面对部分具有更大直径的喷嘴或比不面对部分更高密度的喷嘴。

公开(公告)号：US06454909B1

公开(公告)日：2002-09-24

申请号：US09611665

申请日：2000-07-06

申请人： Kimihiro Matsuse ,  Sakae Nakatsuka ,  Kentaro Oshimo

发明人： Kimihiro Matsuse ,  Sakae Nakatsuka ,  Kentaro Oshimo

IPC分类号： C23C1434

CPC分类号： C23C16/45565 ,  C23C16/45521 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/481 ,  H01L21/67069

摘要： A processing apparatus includes a processing chamber, a support mechanism provided in the processing chamber to support a wafer having an underlying film formed on a major surface and adjacent side face, and a supply member provided at the processing chamber and spaced from the support mechanism, to supply an incoming gas into the processing chamber. A gas carrying mechanism is provided for selectively sending a film forming gas and etching gas to the gas supply member. A main film is formed on a portion of an underlying film formed on the wafer supported on the support mechanism, by using the film forming gas supplied from the gas supply member. A portion of the underlying film, which is exposed, not covered with the main film, is etched away by the etching gas supplied from the gas supplied member.

摘要翻译： 一种处理装置，包括处理室，设置在处理室中以支撑具有形成在主表面和相邻侧面上的下面的膜的晶片的支撑机构，以及设置在处理室处并与支撑机构间隔开的供给构件， 以将进入的气体供应到处理室中。 提供了一种气体输送机构，用于选择性地将成膜气体和蚀刻气体送到气体供应构件。 通过使用从气体供给构件供给的成膜气体，在支撑在支撑机构上的形成在晶片上的下层膜的一部分上形成主膜。 暴露于未被主膜覆盖的底层膜的一部分被从供气部件供给的蚀刻气体蚀刻掉。

公开(公告)号：US20140342030A1

公开(公告)日：2014-11-20

申请号：US14360816

申请日：2012-09-13

申请人： Sakae Nakatsuka

发明人： Sakae Nakatsuka

IPC分类号： B29C59/00

CPC分类号： B29C59/002 ,  B29C33/56 ,  B29L2031/34 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： Provided is a mold for imprint having a leveling agent layer in which a desired uneven pattern is formed on an outermost surface by embedding unevenness on a main surface of a base body by coting this portion with a leveling agent.

摘要翻译： 本发明提供了一种用于压印的模具，其具有通过用流平剂将该部分嵌入基体的主表面上而在最外表面上形成期望的凹凸图案的流平剂层。

公开(公告)号：US06625862B2

公开(公告)日：2003-09-30

申请号：US09550015

申请日：2000-04-14

申请人： Morio Kajiyama ,  Sakae Nakatsuka ,  Yasushi Aiba

发明人： Morio Kajiyama ,  Sakae Nakatsuka ,  Yasushi Aiba

IPC分类号： C23C1600

CPC分类号： C23C16/4404 ,  Y10T29/49885 ,  Y10T29/49886

摘要： A wafer processing apparatus (14) has a wafer processing vessel (16). A wafer is mounted on a susceptor (22) included in the wafer processing apparatus. Process gases are supplied to the wafer through a shower head (74) disposed in an upper region within the processing vessel to carry out a predetermined process for processing the wafer. The surfaces of aluminum members (16, 74) employed in the wafer processing apparatus are subjected to an organic mechanical chemical polishing process, a blasting process and an aluminum oxide film forming process in that order. It is difficult for unnecessary films to adhere to the thus treated surfaces and it is difficult for unnecessary films deposited on the thus treated surfaces to come off the surfaces. Consequently, intervals between cleaning operations can be extended and production of particles can be suppressed.

摘要翻译： 晶片处理装置（14）具有晶片处理容器（16）。 将晶片安装在晶片处理装置中包括的基座（22）上。 工艺气体通过设置在处理容器内的上部区域中的喷淋头（74）供应到晶片，以执行用于处理晶片的预定处理。 在晶片处理装置中使用的铝构件（16,74）的表面依次进行有机机械化学抛光处理，喷砂处理和氧化铝膜形成处理。 难以将不需要的膜粘附到如此处理的表面上，并且难以将沉积在如此处理的表面上的不需要的膜从表面脱落。 因此，可以延长清洁操作之间的间隔，并且可以抑制颗粒的产生。

公开(公告)号：US20120328728A1

公开(公告)日：2012-12-27

申请号：US13575854

申请日：2011-01-27

申请人： Sakae Nakatsuka ,  Isao Amemiya ,  Ikuru Kimura

发明人： Sakae Nakatsuka ,  Isao Amemiya ,  Ikuru Kimura

IPC分类号： B29C33/42 ,  B29C35/08

CPC分类号： G03F7/0002 ,  B29C33/3842 ,  B82Y10/00 ,  B82Y40/00

摘要： To provide an imprinting mold comprising: a flattening layer provided on a substrate, having a layer made of a flattening agent; and a layer having a fine pattern on the flattening layer.

摘要翻译： 提供一种压印模具，包括：设置在基板上的平坦化层，具有由平坦化剂制成的层; 以及在平坦化层上具有精细图案的层。

公开(公告)号：US20120135353A1

公开(公告)日：2012-05-31

申请号：US13381232

申请日：2010-07-01

申请人： Isao Amemiya ,  Sakae Nakatsuka ,  Kazutake Taniguchi ,  Ikuru Kimura

发明人： Isao Amemiya ,  Sakae Nakatsuka ,  Kazutake Taniguchi ,  Ikuru Kimura

IPC分类号： G03F7/20 ,  G03F7/075 ,  G03F7/004

CPC分类号： G03F7/0042 ,  G03F7/2053

摘要： A functionally gradient inorganic resist that changes in its state by heat, having a main surface irradiated with laser beams and a rear surface opposed to the main surface; the functionally gradient inorganic resist including a single layer resist, wherein at least a composition of the single layer resist is continuously varied from the main surface side to the rear surface side, and anisotropy of an area in which a temperature reaches a fixed temperature when being irradiated with laser beams locally, is continuously increased from the main surface side to the rear surface side in the single layer resist.

摘要翻译： 一种功能梯度无机抗蚀剂，其通过加热使其状态发生变化，具有照射激光束的主表面和与主表面相对的后表面; 功能梯度无机抗蚀剂，其包括单层抗蚀剂，其中至少单层抗蚀剂的组成从主表面侧至后表面侧连续变化，当存在温度达到固定温度的区域的各向异性 局部照射激光束在单层抗蚀剂中从主表面侧到后表面侧连续增加。

公开(公告)号：US6036782A

公开(公告)日：2000-03-14

申请号：US166577

申请日：1998-10-06

申请人： Sumi Tanaka ,  Sakae Nakatsuka ,  Mitsuhiro Tachibana

发明人： Sumi Tanaka ,  Sakae Nakatsuka ,  Mitsuhiro Tachibana

IPC分类号： H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/455 ,  H01L21/687

摘要： A showerhead for use in a process chamber for performing a predetermined process on an object, designed to apply a prescribed gas in the process chamber. The showerhead comprises a main body, a cover, and a support. The main body has a an internal space into which the gas to be supplied into the process chamber is introduced and an opening which opens to the process chamber. The cover closes the opening of the main body and has a plurality of gas-applying holes for applying the gas from the main body. The support supports the cover to the main body and provides a predetermined clearance between the cover and the main body.

摘要翻译： 一种在处理室中使用的用于对物体进行预定处理的喷头，其被设计成在处理室中施加规定的气体。 喷头包括主体，盖和支撑件。 主体具有内部空间，供给到处理室中的气体被引入到该内部空间中，并且开口通向处理室。 盖封闭主体的开口，并具有多个用于从主体施加气体的气体施加孔。 支撑件支撑主体的盖，并且在盖和主体之间提供预定的间隙。