-
公开(公告)号:US20070107845A1
公开(公告)日:2007-05-17
申请号:US11623573
申请日:2007-01-16
申请人: Shigeru Ishizawa , Hiroaki Saeki , Yoshimitsu Tamura , Shigetoshi Hosaka , Masahide Itoh , Kazushi Tahara , Yasushi Kodashima
发明人: Shigeru Ishizawa , Hiroaki Saeki , Yoshimitsu Tamura , Shigetoshi Hosaka , Masahide Itoh , Kazushi Tahara , Yasushi Kodashima
IPC分类号: C23F1/00 , H01L21/306 , C23C16/00
CPC分类号: H01L21/67751 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/67201
摘要: A semiconductor processing system includes an intermediate structure disposed between an atmospheric pressure entrance transfer chamber and a vacuum common transfer chamber. The intermediate structure includes a transfer passage for a target substrate to pass therein. The transfer passage includes a first buffer chamber a middle transfer chamber and a second buffer chamber detachably connected. An additional processing apparatus is detachably connected to the middle transfer chamber. The intermediate structure is selectively arranged in first or second state. In the first state, the additional processing apparatus performs a vacuum process, while the first buffer chamber is a load-lock chamber. In the second state, the additional processing apparatus performs an atmospheric pressure process, while the second buffer chamber is a load-lock chamber.
摘要翻译: 半导体处理系统包括设置在大气压入口传送室和真空公共传送室之间的中间结构。 中间结构包括用于目标基板的传送通道。 传送通道包括第一缓冲室,中间传送室和可拆卸地连接的第二缓冲室。 附加处理装置可拆卸地连接到中间传送室。 中间结构选择性地布置在第一或第二状态。 在第一状态下,附加处理装置执行真空处理,而第一缓冲室是装载锁定室。 在第二状态下,附加处理装置进行大气压处理,而第二缓冲室是装载锁定室。
-
2.
公开(公告)号:US06852194B2
公开(公告)日:2005-02-08
申请号:US10147990
申请日:2002-05-20
IPC分类号: C23C16/54 , H01L21/00 , H01L21/677 , C23F1/00 , C23C16/00
CPC分类号: H01L21/67745 , C23C16/54 , H01L21/67161 , H01L21/67167 , H01L21/67173 , H01L21/67184 , H01L21/67742 , Y10S414/139
摘要: Processing apparatus is disclosed, that comprises substrate container holding table that can hold substrate container that contains plurality of target substrates, first transferring chamber, disposed adjacent to the substrate container holding table, that maintains the interior at first pressure, first processing unit group, disposed around the first transferring chamber, that processes target substrate at the first pressure, first transferring mechanism, disposed in the first transferring chamber, that transfers target substrate, second transferring chamber, disposed adjacent to the first transferring chamber, that maintains the interior at second pressure, second processing unit group, disposed around the second transferring chamber, that processes target substrate at the second pressure, and second transferring mechanism, disposed in the second transferring chamber, wherein the first transferring mechanism and/or the second transferring mechanism has at least two transferring arms.
摘要翻译: 公开了一种处理装置,其包括可容纳多个目标基板的基板容器的基板容器保持台,第一处理单元组,第一处理单元组,设置在基板容器保持台附近设置的第一传送室 围绕第一传送室,处理设置在第一传送室中的第一压力下的目标基板,第一传送机构,传送目标基板,邻近第一传送室设置的第二传送室,其将内部维持在第二压力 第二处理单元组,设置在第二转印室周围,处理第二压力下的目标基板;以及第二转印机构,设置在第二转印室中,其中第一转印机构和/或第二转印机构具有至少两个 转移武器
-