Abstract:
A substrate processing apparatus for processing a wafer including a temporary substrate and a semiconductor device. The substrate processing apparatus includes a first half portion, a second half portion and a liquid supply unit. The first half portion includes a working platform. The second half portion includes an upper cover having a first surface and a plurality of second holes. The liquid supply unit provides a liquid. The wafer is placed on the working platform, and a second surface of the semiconductor device and the first surface are spaced by a distance sufficient for allowing the liquid to come into contact with the first surface when the liquid flows at the second surface to generate a suction force on the second surface. As such, a peel force is formed between the temporary substrate and the semiconductor device to cause the two to separate from each other.
Abstract:
A housing is for an electronic device. The housing includes a main body made of thermoplastic, and a transparent layer formed on the main body. The transparent layer is made of transparent thermosetting plastic.
Abstract:
A miniature wafer processing apparatus includes a first half portion, a second half portion, a gas supply unit, a liquid supply unit, a ring sealing member disposed at peripheries of the first half portion and the second half portion, and a liquid recycling member. The first half portion includes a first hole disposed at a work platform. The second half portion includes an upper cover correspondingly covering the work platform to form a processing chamber, and a second hole disposed at the upper cover. The gas supply unit and the liquid supply unit are in communication with the first hole and the second hole. The liquid recycling member includes a recycling tube, a discharging tube and a filtering portion. With the first half portion and the second half portion, the processing chamber and the overall volume can be reduced.
Abstract:
A non-contact wafer transport device for transporting a wafer to be transported includes a base, a moving arm, a tube disposed in the moving arm and a negative pressure device. The moving arm is pivotally connected to the base, moves relatively to the base, and includes an operating end away from the base. The tube includes a channel that accommodates a fluid, and a suction port that is in communication with the channel and formed at the suction port. The negative pressure device, connected to the channel, generates a negative pressure upon the fluid in the channel to cause the suction port to form a suction force. The suction force acts on the wafer to be transported and causes the wafer to be transported to be kept at a distance from the operating end. Thus, without contacting the wafer, the wafer to be transported can be transported.
Abstract:
An apparatus for substrate processing, mainly includes a processing unit and a fluid supply unit. The processing unit includes a platform for laying a substrate. The platform includes a plurality of injection holes defined thereon, the injection holes obliquely and downwardly extend from a top surface of the platform. The fluid supply unit includes a plurality of containers containing fluids for supplying to the processing unit and fluid-connected to the injection holes of the platform. The fluids from the fluid supply unit can be obliquely injected out from the injection holes and slightly floats and moves the substrate over the platform and reacts with the substrate.
Abstract:
A PWM comprises a voltage transformation module, a voltage-sensing module and a timer. The voltage transformation module is configured to transform an input voltage into an output voltage. The voltage-sensing module is coupled to the voltage transformation module and configured to detect a voltage of a first terminal, wherein the voltage of the first terminal is proportional to the output voltage. The timer is configured to measure the time duration for which the voltage of the first terminal is lower than a reference voltage, wherein the timer initiates a short circuit signal when the time duration is greater than a predetermined value.
Abstract:
A feedback signal sensing method includes the steps of: providing a pulse width modulation (PWM) signal having a period; charging a capacitor by a current source during a pulse duration of the period, so as to form an equivalent slope compensation ramp signal; conducting an inductor current flowing from a boost inductor to flow through an equivalent resistor during the pulse duration of the period, so as to form an equivalent inductor current signal; and using a coupling characteristic of the capacitor together with the equivalent slope compensation ramp signal and the equivalent inductor current signal to form a feedback signal.
Abstract:
A substrate processing apparatus for processing a wafer including a temporary substrate and a semiconductor device. The substrate processing apparatus includes a first half portion, a second half portion and a liquid supply unit. The first half portion includes a working platform. The second half portion includes an upper cover having a first surface and a plurality of second holes. The liquid supply unit provides a liquid. The wafer is placed on the working platform, and a second surface of the semiconductor device and the first surface are spaced by a distance sufficient for allowing the liquid to come into contact with the first surface when the liquid flows at the second surface to generate a suction force on the second surface. As such, a peel force is formed between the temporary substrate and the semiconductor device to cause the two to separate from each other.
Abstract:
A MOS circuit arrangement includes a silicon substrate, a semiconductor device, a field oxide layer, and a poly-protective layer. The silicon substrate has a conductive doping incorporated therein, wherein the semiconductor device is electrically connected with the silicon substrate. The field oxide layer is formed on the silicon substrate at a position spaced apart from the terminal of the semiconductor device to form an active region between the field oxide layer and the semiconductor device. The poly-protective layer deposited on the active region to communicate the field oxide layer with the terminal of the semiconductor device, wherein the poly-protective layer provides a junction breakdown path between the semiconductor device and the silicon substrate to increase a junction breakdown voltage of the semiconductor device.
Abstract:
A PWM comprises a voltage transformation module, a voltage-sensing module and a timer. The voltage transformation module is configured to transform an input voltage into an output voltage. The voltage-sensing module is coupled to the voltage transformation module and configured to detect a voltage of a first terminal, wherein the voltage of the first terminal is proportional to the output voltage. The timer is configured to measure the time duration for which the voltage of the first terminal is lower than a reference voltage, wherein the timer initiates a short circuit signal when the time duration is greater than a predetermined value.