公开(公告)号：US20140178659A1

公开(公告)日：2014-06-26

申请号：US14138427

申请日：2013-12-23

Applicant: Shanghua WU ,  Ying LONG ,  Qimin WANG ,  Chengyong WANG

Inventor： Shanghua WU ,  Ying LONG ,  Qimin WANG ,  Chengyong WANG

IPC: B23B27/14

CPC classification number: C23C28/42 ,  C04B35/584 ,  C04B35/587 ,  C04B35/593 ,  C04B41/009 ,  C04B41/5031 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2235/3225 ,  C04B2235/3886 ,  C23C14/081 ,  C23C28/04 ,  C23C28/042 ,  C23C28/044 ,  Y10T428/24975 ,  Y10T428/265 ,  C04B41/4529 ,  C04B41/5063 ,  C04B41/5068 ,  C04B41/53 ,  C04B41/5346

Abstract: The present invention provides an Al2O3 coated Si3N4 cutting tool comprising a Si3N4 based substrate body and a coating layer on the substrate body, wherein the coating layer has at least one Al2O3 coating layer consisting of amorphous Al2O3 or nanocrystalline α-, γ-, or κ-Al2O3. The hard and wear resistant refractory coating is deposited onto the Si3N4-based substrate body by reactive sputtering using bipolar pulsed DMS technique or dual magnetron sputtering method at substrate temperatures of 300-700° C. During the deposition, preferably, the substrate temperature is controlled to achieve the desired crystal structure of the coating. To form amorphous Al2O3 coating on the surface of the substrates, the deposition temperature can be controlled from 300 to 500° C.; on the other hand, to form nanocrystalline α-, γ-, or κ-Al2O3, the deposition temperature can be controlled in the range of 500-700° C. The coated cutting tools of the present invention are suitable for high-speed machining of metals by turning, milling, drilling or by other similar chip-forming machining methods.

Abstract translation: 本发明提供了一种Al 2 O 3涂覆的Si 3 N 4切削工具，其包括基于Si 3 N 4的基底主体和在基底主体上的涂层，其中该涂层具有至少一个由无定形Al 2 O 3或纳米晶体α-，γ-或γ- ; -Al2O3。 通过使用双极脉冲DMS技术或双重磁控溅射法在300-700℃的基板温度下，通过反应溅射将耐磨耐磨涂层沉积到基于Si 3 N 4的基板主体上。在沉积期间，优选地，控制基板温度 以实现涂层的所需晶体结构。 为了在基板的表面上形成非晶Al2O3涂层，可以将沉积温度控制在300-500℃; 另一方面，为了形成α-，γ-，或-Al 2 O 3的纳米晶体，淀积温度可以控制在500-700℃的范围内。本发明的涂层切割工具适用于高速 通过车削，铣削，钻孔或其他类似的切屑加工方法来加工金属。

公开(公告)号：US07978829B2

公开(公告)日：2011-07-12

申请号：US11637784

申请日：2006-12-13

Applicant: Ying-Long Mao

Inventor： Ying-Long Mao

IPC: H04M11/00

CPC classification number: G10L13/00

Abstract: A voice file retrieval method comprising the steps of: inputting a word; determining if voicing of the word is needed or not; obtaining a storage home address of a voice file corresponding to the word from a voice field of the word if the voice of the word is needed; and retrieving the voice file from the storage home address. By providing a voice field of the word, the storage home address of the voice file can be directly obtained. Hence, the retrieval speed can be increased, and the time to wait for an articulation of the word can be shortened.

Abstract translation: 一种语音文件检索方法，包括以下步骤：输入单词; 确定是否需要发音; 如果需要该单词的语音，则从单词的语音字段获得对应于该单词的语音文件的存储家庭地址; 并从存储家庭地址中检索语音文件。 通过提供单词的语音字段，可以直接获得语音文件的存储家庭地址。 因此，可以提高检索速度，并且可以缩短等待单词的发音的时间。

公开(公告)号：US20070280440A1

公开(公告)日：2007-12-06

申请号：US11637784

申请日：2006-12-13

Applicant: Ying-Long Mao

Inventor： Ying-Long Mao

IPC: H04M1/64

CPC classification number: G10L13/00

Abstract: A voice file retrieval method comprising the steps of: inputting a word; determining if voicing of the word is needed or not; obtaining a storage home address of a voice file corresponding to the word from a voice field of the word if the voice of the word is needed; and retrieving the voice file from the storage home address. By providing a voice field of the word, the storage home address of the voice file can be directly obtained. Hence, the retrieval speed can be increased, and the time to wait for an articulation of the word can be shortened.

Abstract translation: 一种语音文件检索方法，包括以下步骤：输入单词; 确定是否需要发音; 如果需要该单词的语音，则从单词的语音字段获得对应于该单词的语音文件的存储家庭地址; 并从存储家庭地址中检索语音文件。 通过提供单词的语音字段，可以直接获得语音文件的存储家庭地址。 因此，可以提高检索速度，并且可以缩短等待单词的发音的时间。

公开(公告)号：US06602560B2

公开(公告)日：2003-08-05

申请号：US10196850

申请日：2002-07-16

Applicant: Yi-Lung Cheng ,  Wen-Kung Cheng ,  Ming-Hwa Yoo ,  Szu-An Wu ,  Ying-Long Wang ,  Pei-Fen Chou

Inventor： Yi-Lung Cheng ,  Wen-Kung Cheng ,  Ming-Hwa Yoo ,  Szu-An Wu ,  Ying-Long Wang ,  Pei-Fen Chou

IPC: C23C1640

CPC classification number: C23C16/4405 ,  B08B7/0035

Abstract: A method of removing residual fluorine present in a HDP-CVD chamber which includes a high pressure seasoning process, a dry-cleaning process, and a low-pressure deposition process.

Abstract translation: 一种除去存在于HDP-CVD室中的残余氟的方法，其包括高压调味处理，干洗处理和低压沉积工艺。