公开(公告)号：US08476149B2

公开(公告)日：2013-07-02

申请号：US12512492

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

IPC分类号： H01L29/36

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

摘要翻译： 将通过切克劳斯基法生长的硅单晶锭制成的硅晶片在氧化气体气氛中在1300℃以上但小于1380℃的最高温度（T1）下进行快速加热/冷却热处理 氧分压为20％以上但小于100％。 根据本发明的硅晶片在至少包括硅晶片的器件有源区的无缺陷区（DZ层）中具有0.7×10 18原子/ cm 3的氧固溶体浓度的高氧浓度区域 以上，同时无缺陷区域含有过饱和状态的间隙硅。

公开(公告)号：US5992711A

公开(公告)日：1999-11-30

申请号：US64009

申请日：1998-04-22

申请人： Yoichiro Mochizuki ,  Tetsuro Fushimi ,  Etsuhiro Hasebe ,  Moriki Hashio ,  Toshihiko Murakami ,  Sei Hiraki

发明人： Yoichiro Mochizuki ,  Tetsuro Fushimi ,  Etsuhiro Hasebe ,  Moriki Hashio ,  Toshihiko Murakami ,  Sei Hiraki

IPC分类号： B22D41/50 ,  B22D41/52 ,  B22D41/08

CPC分类号： B22D41/50 ,  B22D41/52

摘要： An integrated submerged entry nozzle for thin slab continuous casting has a plate member 12 corresponding to the lower plate of a slide gate and a nozzle member 11 having a flat molten steel passage section in the part to be submerged into molten steel of at least the tip, the both 11. 12 being integrated together by the use of an organic adhesive. The plate member 12 and the nozzle member 11 are separately formed followed by baking or firing, the both 11, 12 are adhered together by the use of an organic adhesive, the adhesive is dried, the outside is covered with a shell, and refractory mortar is filled in the space. Thereafter, a refractory ring 28 is adhered in such a manner as to cover the inside of the adhesive joint part followed by drying.

摘要翻译： 用于薄板连续铸造的集成浸入式喷嘴具有对应于滑动门的下板的板构件12和在该部分中具有平坦的钢水通道部的喷嘴构件11，该部分将被浸入至少尖端的钢水中 ，这两个11.12通过使用有机粘合剂整合在一起。 板构件12和喷嘴构件11分开形成，然后烘烤或烧制，两者11,12通过使用有机粘合剂粘合在一起，粘合剂被干燥，外面被壳覆盖，并且耐火砂浆 充满了空间。 此后，以覆盖粘合剂接合部的内部然后干燥的方式粘合耐火环28。

公开(公告)号：US5961874A

公开(公告)日：1999-10-05

申请号：US45869

申请日：1998-03-23

申请人： Etsuhiro Hasebe ,  Tetsuro Fushimi ,  Tatsuya Shimoda ,  Yoichiro Mochizuki ,  Tadasu Takigawa ,  Toshihiko Murakami ,  Sei Hiraki

发明人： Etsuhiro Hasebe ,  Tetsuro Fushimi ,  Tatsuya Shimoda ,  Yoichiro Mochizuki ,  Tadasu Takigawa ,  Toshihiko Murakami ,  Sei Hiraki

IPC分类号： B22D11/10 ,  B22D41/50

CPC分类号： B22D41/50

摘要： In a flat casting nozzle 10 having a taper 13, the position of the terminal end 14 of the taper 13 formed on the long edge side and the position of the terminal end 17 of a taper 16 formed on the short edge side are mutually shifted.

摘要翻译： 在具有锥形13的扁平铸造喷嘴10中，形成在长边缘的锥形13的终端14的位置和形成在短边侧的锥形16的终端17的位置相互偏移。

公开(公告)号：US5683950A

公开(公告)日：1997-11-04

申请号：US643590

申请日：1996-05-06

申请人： Tadasu Takigawa ,  Etsuhiro Hasebe ,  Yoichiro Mochizuki

发明人： Tadasu Takigawa ,  Etsuhiro Hasebe ,  Yoichiro Mochizuki

IPC分类号： C04B35/103 ,  C04B35/106 ,  C04B35/48 ,  C04B35/66 ,  C04B35/532 ,  C04B35/482

CPC分类号： C04B35/6303 ,  C04B35/103 ,  C04B35/106 ,  C04B35/481 ,  C04B35/66 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/3418 ,  C04B2235/3463 ,  C04B2235/3826 ,  C04B2235/422

摘要： Provided is a refractory for casting which contains clinker having a mineral crystal phase consisting essentially of mullite and baddeleyite. The refractory for casting has excellent in a thermal-shock resistance, corrosion resistance and strength. The refractory for casting is manufactured from a raw material containing a refractory composition and an organic binder, wherein the refractory composition comprises (a) 3 to 60 wt % of clinker having a mineral crystal phase consisting essentially of mullite and baddeleyite, and containing 5 to 22 wt % of alumina (Al.sub.2 O.sub.3), 38 to 68 wt % of zirconia (ZrO.sub.2) and 27 to 40 wt % of silica; (b) 5 to 40 wt % of at least one carbon-based material selected from the group consisting of graphite and carbon; and (c) at least one refractory element as a balance, selected from the group consisting of alumina, fused silica, zirconia, silicon carbide, mullite and a metal silicon.

摘要翻译： 提供一种用于铸造的耐火材料，其包含具有基本上由莫来石和菱镁矿组成的矿物结晶相的熟料。 铸造耐火材料具有优异的耐热冲击性，耐腐蚀性和强度。 用于铸造的耐火材料由含有耐火材料组合物和有机粘合剂的原料制成，其中耐火材料组合物包含（a）3至60重量％的具有基本上由莫来石和铁矿石组成的矿物结晶相的熟料，并且含有5至 22重量％的氧化铝（Al 2 O 3），38〜68重量％的氧化锆（ZrO 2）和27〜40重量％的二氧化硅; （b）5〜40重量％的选自石墨和碳的至少一种碳基材料; 和（c）余量的至少一种难熔元素，选自氧化铝，熔融石英，氧化锆，碳化硅，莫来石和金属硅。

公开(公告)号：US20100038757A1

公开(公告)日：2010-02-18

申请号：US12512492

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

IPC分类号： H01L29/36 ,  H01L21/26 ,  H01L21/322

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

摘要翻译： 将通过切克劳斯基法生长的硅单晶锭制成的硅晶片在氧化气体气氛中在1300℃以上但小于1380℃的最高温度（T1）下进行快速加热/冷却热处理 氧分压为20％以上但小于100％。 根据本发明的硅晶片在至少包括硅晶片的器件有源区的无缺陷区（DZ层）中具有0.7×10 18原子/ cm 3的氧固溶体浓度的高氧浓度区域 以上，同时无缺陷区域含有过饱和状态的间隙硅。