公开(公告)号：US20070292697A1

公开(公告)日：2007-12-20

申请号：US10598967

申请日：2005-03-08

申请人： Kazumi Nakayoshi ,  Katsutoshi Mine ,  Akihiko Kobayashi

发明人： Kazumi Nakayoshi ,  Katsutoshi Mine ,  Akihiko Kobayashi

IPC分类号： H01L33/00

CPC分类号： H05K1/056 ,  H01L33/64 ,  H05K2201/0162 ,  H05K2201/10106

摘要： A metal base circuit substrate for an optical device, which effectively reflects the generated light and radiates heat from the substrate, comprises a metal base substrate made from aluminum or aluminum alloy that supports an electric circuit via an insulation layer, wherein the insulation layer is formed from a transparent cross-linked silicone body, and the electric circuit is formed directly on the insulation layer. And an efficient method for manufacturing the aforementioned substrate comprises the steps of: a) applying a cross-linkable silicone onto the surface of a metal base substrate made from aluminum or aluminum alloy, b) cross-link

摘要翻译： 一种用于光学器件的金属基底电路基板，其有效地反射所产生的光并从基板辐射热量，包括由铝或铝合金制成的金属基底，其通过绝缘层支撑电路，其中形成绝缘层 由透明的交联硅氧烷体构成，电路直接形成在绝缘层上。 并且制造上述基板的有效方法包括以下步骤：a）将可交联的硅氧烷涂覆在由铝或铝合金制成的金属基底的表面上，b）交联

公开(公告)号：US06517632B2

公开(公告)日：2003-02-11

申请号：US09760713

申请日：2001-01-17

申请人： Toshirou Minami ,  Yumiko Hirano ,  Kouki Ikeuchi ,  Takashi Miyahara ,  Takashi Ishikawa ,  Osamu Kubota ,  Akihiko Kobayashi

发明人： Toshirou Minami ,  Yumiko Hirano ,  Kouki Ikeuchi ,  Takashi Miyahara ,  Takashi Ishikawa ,  Osamu Kubota ,  Akihiko Kobayashi

IPC分类号： C30B2504

CPC分类号： C30B29/06 ,  C30B15/04

摘要： A method of fabricating a silicon single crystal ingot and a method of fabricating a silicon wafer using the ingot, characterized in that: the method is structured in such a manner that the silicon single crystal ingot is pulled up from the silicon fused liquid 7 in which nitrogen N and carbon C are doped in polycrystalline silicon, by using the Czochralski method, and its nitrogen density is 1×1013-5×1015 atoms/cm3, and the carbon density is 5×1015-3×1016 atoms/cm3.

摘要翻译： 一种制造硅单晶锭的方法和使用该锭制造硅晶片的方法，其特征在于：该方法的结构是这样一种方式构成：将硅单晶锭从硅熔融液体7中拉出，其中， 通过使用Czochralski法将氮N和碳C掺杂在多晶硅中，其氮密度为1×10 13 -5×10 15原子/ cm 3，碳密度为5×10 15 -3×10 16原子/ cm 3。

公开(公告)号：US06451381B2

公开(公告)日：2002-09-17

申请号：US09765196

申请日：2001-01-18

申请人： Takashi Nakamura ,  Akihiko Kobayashi ,  Kiyotaka Sawa ,  Katsutoshi Mine

发明人： Takashi Nakamura ,  Akihiko Kobayashi ,  Kiyotaka Sawa ,  Katsutoshi Mine

IPC分类号： C08G77455

CPC分类号： H01L21/02126 ,  G03F7/0757 ,  G03F7/0758 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3121 ,  H01L21/3122

摘要： An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for forming a crosslinked thin film therefrom.

摘要翻译： 一种电绝缘交联薄膜形成有机树脂组合物，其包含（A）具有硅原子键合氢原子或硅原子键合的烯基的电绝缘有机树脂和（B）溶剂，以及形成交联薄膜 电影。

公开(公告)号：US06213581B1

公开(公告)日：2001-04-10

申请号：US08183789

申请日：1994-01-21

申请人： Takeshi Hasegawa ,  Akihiko Kobayashi

发明人： Takeshi Hasegawa ,  Akihiko Kobayashi

IPC分类号： B41J2165

CPC分类号： B41J2/16526

摘要： An ink jet apparatus has installed therein a retractable recovery device. The ink jet apparatus has a housing with a space accommodating a carriage for scanning a recording area, an ink jet head removably mounted on the carriage for ejecting ink onto a recording medium as the carriage scans the recording area, and a removable cover member forming a part of the housing covering said space. The recovery device includes a pressing member mounted in the space at a location outside the scanning area for movement between an accommodating position and an operating position. The pressing member extends from the space when moved to the operating position after removal of the cover member, whereby a recovery operation using the pressing member can be performed on the ink jet head by removing the ink jet head from the carriage. The pressing member, when in the accommodating position, is disposed within the space for concealment by the cover member.

摘要翻译： 一种喷墨设备在其中安装有可伸缩的回收装置。 喷墨装置具有容纳用于扫描记录区域的托架的空间的壳体，可拆卸地安装在托架上的喷墨头，用于当托架扫描记录区域时将墨喷射到记录介质上;以及可移除盖构件， 部分住房覆盖所述空间。 恢复装置包括安装在扫描区域外部的位置处的空间中的按压构件，用于在容纳位置和操作位置之间移动。 按压构件在移除盖构件之后移动到操作位置时从空间延伸，由此通过从喷墨头移除喷墨头，可以在喷墨头上进行使用按压构件的恢复操作。 当按压构件处于容纳位置时，被设置在用于由盖构件隐藏的空间内。

公开(公告)号：US06191183B1

公开(公告)日：2001-02-20

申请号：US09412219

申请日：1999-10-05

申请人： Akihiko Kobayashi ,  Katsutoshi Mine ,  Takashi Nakamura ,  Motoshi Sasaki ,  Kiyotaka Sawa

发明人： Akihiko Kobayashi ,  Katsutoshi Mine ,  Takashi Nakamura ,  Motoshi Sasaki ,  Kiyotaka Sawa

IPC分类号： C08J328

CPC分类号： C09D183/04 ,  C08G77/12 ,  H01L21/316 ,  Y10T428/31663

摘要： The instant invention pertains to a composition that can form silica thin films, wherein said composition performs well as a substrate planarizing coating when applied to a substrate and can be converted by exposure to high-energy radiation into silica thin film with an excellent electrical insulating performance. The composition for the formation of silica thin films comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing the surface of the said substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.

摘要翻译： 本发明涉及可以形成二氧化硅薄膜的组合物，其中所述组合物在施加到基底上时作为基底平面化涂层表现良好，并且可以通过暴露于高能辐射而转化成具有优异电绝缘性能的二氧化硅薄膜 。 用于形成二氧化硅薄膜的组合物包括（A）含有至少45重量％的分子量不超过1500的氢倍半硅氧烷树脂的氢倍半硅氧烷树脂; 和（B）溶剂。 通过蒸发溶剂（B）制备二氧化硅薄膜，然后通过将所述基材的表面暴露于高能辐射而将至少一部分氢倍半硅氧烷树脂（A）转化为二氧化硅。 优选的衬底是具有至少一个导电层的半导体衬底。

公开(公告)号：US6149966A

公开(公告)日：2000-11-21

申请号：US120384

申请日：1998-03-31

申请人： Akihiko Kobayashi ,  Katsutoshi Mine ,  Takashi Nakamura ,  Motoshi Sasaki ,  Kiyotaka Sawa

发明人： Akihiko Kobayashi ,  Katsutoshi Mine ,  Takashi Nakamura ,  Motoshi Sasaki ,  Kiyotaka Sawa

IPC分类号： C09D5/25 ,  C09D7/12 ,  C09D125/02 ,  C09D127/12 ,  C09D129/10 ,  C09D179/08 ,  C09D183/04 ,  C09D183/05 ,  C09D201/00 ,  H01B3/30 ,  H01B3/42 ,  H01B3/46 ,  H01L21/312 ,  H01L21/316 ,  B05D3/02 ,  B05D5/12

CPC分类号： H01L21/312 ,  C09D183/04 ,  H01B3/46

摘要： To provide a composition and process for forming insulating films that can produce insulating films having low dielectric constants. The composition comprises (A) an electrically insulating curable inorganic or organic resin, (B) a solvent, and (C) at least one solvent-soluble substance (excluding the solvent used for component (B)) that upon heating or by interaction with the resin (A) can generate gas or undergo volatilization in the temperature range from 0.degree. C. to 800.degree. C. The insulating films are prepared by coating the surface of a substrate the composition; evaporating the solvent; and subsequently heating the substrate in order to generate gas from component (C) during the course of or after the cure of the said resin (A).

摘要翻译： 提供一种用于形成可制造具有低介电常数的绝缘膜的绝缘膜的组合物和工艺。 组合物包含（A）电绝缘的可固化无机或有机树脂，（B）溶剂和（C）至少一种溶剂可溶物质（不包括用于组分（B）的溶剂）），其在加热时或通过与 树脂（A）可以在0℃至800℃的温度范围内产生气体或挥发。绝缘膜通过将基材的表面涂布在该组合物上而制备; 蒸发溶剂; 然后在所述树脂（A）的固化过程中或之后加热所述基材以便从组分（C）产生气体。

公开(公告)号：US6074695A

公开(公告)日：2000-06-13

申请号：US52379

申请日：1998-03-31

申请人： Akihiko Kobayashi ,  Katsutoshi Mine ,  Takashi Nakamura ,  Motoshi Sasaki ,  Kiyotaka Sawa

发明人： Akihiko Kobayashi ,  Katsutoshi Mine ,  Takashi Nakamura ,  Motoshi Sasaki ,  Kiyotaka Sawa

IPC分类号： C09D5/25 ,  C09D7/12 ,  C09D125/02 ,  C09D127/12 ,  C09D129/10 ,  C09D179/08 ,  C09D183/04 ,  C09D183/05 ,  C09D201/00 ,  H01B3/30 ,  H01B3/42 ,  H01B3/46 ,  H01L21/312 ,  H01L21/316 ,  B05D5/00

CPC分类号： H01L21/312 ,  C09D183/04 ,  H01B3/46

摘要： To provide a composition for the formation of insulating films that can form an insulating film having a low dielectric constant. The composition comprises (A) an electrically insulating curable resin selected from the group consisting of electrically insulating curable organic resins and electrically insulating curable inorganic resins; and (B) at least two solvents: (B)(i) a solvent capable of dissolving resin (A) and (B)(ii) a solvent whose boiling point or vapor pressure curve differs from that of solvent (B)(i) or whose affinity for resin (A) differs from that of solvent (B)(i). Also claimed is a method for forming a insulating films that have a dielectric constant of less than 2.7.

摘要翻译： 提供用于形成可以形成具有低介电常数的绝缘膜的绝缘膜的组合物。 该组合物包含（A）选自电绝缘性可固化有机树脂和电绝缘可固化无机树脂的电绝缘可固化树脂; 和（B）至少两种溶剂：（B）（i）能够溶解树脂（A）和（B）的溶剂（ii）沸点或蒸气压曲线不同于溶剂（B）（i ）或其对树脂（A）的亲和力与溶剂（B）（i）的亲和性不同。 还要求保护的是形成介电常数小于2.7的绝缘膜的方法。

公开(公告)号：US5427706A

公开(公告)日：1995-06-27

申请号：US113455

申请日：1993-08-27

申请人： Akihiko Kobayashi ,  Takashi Nakamura

发明人： Akihiko Kobayashi ,  Takashi Nakamura

IPC分类号： C10M171/00 ,  C10M169/04

CPC分类号： C10M171/001

摘要： The present invention relates to an electroviscous fluid comprising the dispersion in an electrical insulating fluid of an organopolysiloxane having at least one metal sulfonate group in its molecule. The electroviscous fluid of the present invention can further comprise a polyether. The electroviscous fluid of the present invention does not wear or abrade surrounding equipment, is thermally stable, and that has a large electroviscous effect (yield value) and an excellent dispersion stability.

摘要翻译： 本发明涉及一种电粘性流体，其包含在其分子中具有至少一个金属磺酸盐基团的有机聚硅氧烷的电绝缘流体中的分散体。 本发明的电粘液还可以包含聚醚。 本发明的电粘性流体不会磨损或磨损周围的设备，是热稳定的，并且具有大的电粘效应（屈服值）和优异的分散稳定性。

公开(公告)号：USD298546S

公开(公告)日：1988-11-15

申请号：US852492

申请日：1986-04-15

申请人： Eiichi Yoshioka ,  Keiko Takemata ,  Akihiko Kobayashi ,  Takeshi Hasegawa

设计人： Eiichi Yoshioka ,  Keiko Takemata ,  Akihiko Kobayashi ,  Takeshi Hasegawa

公开(公告)号：US08476149B2

公开(公告)日：2013-07-02

申请号：US12512492

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

IPC分类号： H01L29/36

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

摘要翻译： 将通过切克劳斯基法生长的硅单晶锭制成的硅晶片在氧化气体气氛中在1300℃以上但小于1380℃的最高温度（T1）下进行快速加热/冷却热处理 氧分压为20％以上但小于100％。 根据本发明的硅晶片在至少包括硅晶片的器件有源区的无缺陷区（DZ层）中具有0.7×10 18原子/ cm 3的氧固溶体浓度的高氧浓度区域 以上，同时无缺陷区域含有过饱和状态的间隙硅。