摘要:
A full area of a semiconductor integrated circuit is divided into unit areas, a mask data file for use in a beam exposure system or an inspection apparatus is produced based on CAD data of the full area, full-area header information in which a starting address of a mask data of each unit area relates to positional information on said unit area, partial-area header information corresponding to each of partial areas obtained by division of the full area is produced based on the full-area header information and mask data of the partial areas are extracted from a mask data of the full area based on the partial area header information to produce the mask data files corresponding to the partial area header information.
摘要:
In the exposure method which carries out optical proximity correction processing for exposure data having a plurality of exposure patterns and exposes a sample in accordance with such corrected exposure data, the exposure patterns to be corrected are converted, in the optical proximity correction processing, into a minus objective pattern and a minus pattern to be deleted from the minus objective pattern, to form corrected exposure data. And, the minus pattern is deleted from the minus objective pattern of the corrected exposure data to bitmap a corrected exposure pattern, to expose a sample in accordance with such bitmapped corrected exposure pattern.
摘要:
From the region near the target pattern, patterns whose barycenter positions are not changed even if deformation is generated due to proximity effect or coarse-and-fine difference at the time of pattern forming are selected as alignment patterns, and the barycenter positions thereof are set as alignment reference coordinates. Rough alignment is carried out based on the reference position provided in a region other than the device forming region, thereby detecting the alignment pattern in the device forming region. Positioning is carried out such that the alignment reference coordinates of the alignment patterns and the center coordinates of the target pattern coincide with each other, and the target pattern is detected.
摘要:
Provided is a computer 15 for producing corrected pattern data which includes corrected features each obtained by adding auxiliary features (serifs) to the right-angle corners of an original feature to compensate for the photo proximity effect. The computer performs the step of: (S1) inputting an original pattern data; (S2) adding triangle or rectangle serifs to right-angle corners of original features, each serif having a side which is an extension of a first side of a corresponding original feature and another side which is a portion of the side adjacent to the first side; (S3) performing a geometric OR operation on the original feature and the serifs to obtain a synthesized feature; and (S4) decomposing the synthesized feature into basic figures which can be processed in an electron beam exposure apparatus.