Aqueous coating composition and coating method using same
    1.
    发明授权
    Aqueous coating composition and coating method using same 失效
    水性涂​​料组合物及其涂布方法

    公开(公告)号:US4948829A

    公开(公告)日:1990-08-14

    申请号:US347645

    申请日:1989-05-05

    摘要: Disclosed are (1) an aqueous coating composition which is characterized in that the composition comprises:(A) an acrylic resin-type emulsion,(B) a urethane resin-type emulsion and(C) a crosslinking agentthe component (B) being a self-emulsifiable urethane emulsion prepard by subjecting a urethane prepolymer to reaction for chain extension by water and to emulsification after or during neutralization of the urethane prepolymer with a tertiary amine, the urethane prepolymer consisting essentially of (i) an aliphatic and/or alicyclic diisocyanate, (ii) a polyether diol and/or polyester diol both having a number-average molecular weight of about 500 to about 5000, (iii) a low-molecular weight polyhydroxyl compound and (iv) a dimethylolalkanoic acid in an NCO/OH ratio by equivalent of 1.1-1.9/1; and (2) a two-coat one-bake coating method characterized by use of said aqueous coating composition as the base-coat composition.

    摘要翻译: 公开了(1)一种水性涂料组合物,其特征在于组合物包含:(A)丙烯酸树脂型乳液,(B)聚氨酯树脂型乳液和(C)交联剂,组分(B)为 一种可自乳化的聚氨酯乳液,其通过在氨基甲酸酯预聚物与叔胺中和之后使氨基甲酸酯预聚物进行水反应扩链和乳化,氨基甲酸酯预聚物基本上由(i)脂族和/或脂环族 二异氰酸酯,(ii)数均分子量为约500至约5000的聚醚二醇和/或聚酯二醇,(iii)低分子量多羟基化合物和(ⅳ)NCO / OH中的二羟甲基链烷酸 比例相当于1.1-1.9 / 1; 和(2)双层单烘烤涂布方法,其特征在于使用所述水性涂料组合物作为底涂层组合物。

    Method for manufacturing semiconductor devices having oxide films and
the semiconductor devices manufactured thereby
    3.
    发明授权
    Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby 失效
    用于制造具有氧化物膜的半导体器件及其制造的半导体器件的方法

    公开(公告)号:US3999282A

    公开(公告)日:1976-12-28

    申请号:US71810

    申请日:1970-09-14

    摘要: A silicon crystal body having a major surface lying parallel to a {110} or {100} crystal plane is prepared. A silicon oxide film is formed on the major surface by heating the body in an atmosphere containing steam. Then, an aluminum layer is formed on the oxide film. Thereby the amount of surface donors induced in the major surface of the body by the existence of the oxide film is smaller than the amount of induced surface donors to be obtained in a crystal plane of a like silicon body but lying parallel to a {111} plane covered with a like oxide film. The amount of induced surface donors is further reduced by subjecting said body to a heat treatment under application across said oxide film of such a voltage as that which renders the aluminum layer provided on the oxide film negative polarity. This invention is applied to the manufacture of, for example, MOS field effect transistors, MOS diodes and so-called planar transistors.

    摘要翻译: 制备具有平行于{110}或{100}晶面平行的主表面的硅晶体。 通过在包含蒸汽的气氛中加热身体,在主表面上形成氧化硅膜。 然后,在氧化膜上形成铝层。 因此,通过氧化膜的存在,在主体表面诱发的表面供体的量小于在类似硅体的晶面中获得的诱导表面供体的数量,但平行于{111} 平面被类似氧化膜覆盖。 通过在所述氧化膜上施加使得在氧化膜上设置的铝层为负极的电压的电压使所述体进行热处理,进一步降低了诱导表面供体的量。 本发明适用于例如MOS场效应晶体管,MOS二极管和所谓的平面晶体管的制造。