公开(公告)号：US20140054542A1

公开(公告)日：2014-02-27

申请号：US13969811

申请日：2013-08-19

Applicant: Young Hun HAN ,  Rak Jun Choi ,  Jeong Tak Oh

Inventor： Young Hun HAN ,  Rak Jun Choi ,  Jeong Tak Oh

IPC: H01L33/12

CPC classification number: H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.

Abstract translation: 发光器件包括第一导电半导体层; 在所述第一导电半导体层上的第二导电半导体层; 以及第一和第二导电半导体层之间的有源层。 有源层包括多个阱层和多个势垒层，其中阱层包括与第一阱层相邻的第一阱层和第二阱层。 阻挡层包括设置在第一阱层和第二阱层之间的第一势垒层，并且第一势垒层包括具有比第一阱层的能带隙宽的能带隙的多个半导体层。 多个半导体层中的至少两层与第一和第二阱层相邻，并且铝含量大于另一层的铝含量。

公开(公告)号：US08912528B2

公开(公告)日：2014-12-16

申请号：US13440321

申请日：2012-04-05

Applicant: Young Hun Han ,  Dong Han Yoo

Inventor： Young Hun Han ,  Dong Han Yoo

IPC: H01L21/02

CPC classification number: H01L21/0245 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/02538 ,  H01L33/0095

Abstract: Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-20)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-20)-plane direction and to form a cleaved facet along a m-plane of the at least one compound semiconductor.

Abstract translation: 实施例公开了一种方法，包括在基板的顶部r面上形成至少一个化合物半导体层，沿着导向线的长度在基板的底部r面上形成用于切割的线，其中引导线延伸在 基板的（11-20）平面方向，其中所述引导线从边缘的一部分延伸到所述边缘的另一部分，并且其中所述边缘设置在所述边缘的顶部r面和底部r面之间 并且向衬底的底部r面施加一个力，沿着（11-20）平面方向上的切割线切割衬底，并沿着至少在（11-20））平面方向上的m平面形成切割面 一种化合物半导体。

公开(公告)号：US20120138994A1

公开(公告)日：2012-06-07

申请号：US13369729

申请日：2012-02-09

Applicant: Dae Sung KANG ,  Rak Jun Choi ,  Sung Hoon Jung ,  Young Hun Han ,  Sung Jin Son

Inventor： Dae Sung KANG ,  Rak Jun Choi ,  Sung Hoon Jung ,  Young Hun Han ,  Sung Jin Son

IPC: H01L33/40

CPC classification number: H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer providing a roughness on a upper surface thereof and including a PEC etching control layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a reflective electrode electrically connected to the second conductive semiconductor layer; and a first electrode electrically connected to the first conductive semiconductor layer.

Abstract translation: 根据本发明实施例的发光器件包括在其上表面上提供粗糙度并包括PEC蚀刻控制层的第一导电半导体层; 在第一导电半导体层下面的有源层; 在有源层下方的第二导电半导体层; 电连接到第二导电半导体层的反射电极; 以及电连接到第一导电半导体层的第一电极。

公开(公告)号：US08871612B2

公开(公告)日：2014-10-28

申请号：US13440640

申请日：2012-04-05

Applicant: Young Hun Han ,  Dong Han Yoo

Inventor： Young Hun Han ,  Dong Han Yoo

IPC: H01L21/301

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/16

Abstract: Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-22)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-22)-plane direction and to form a cleaved facet along a c-plane of the at least one compound semiconductor.

Abstract translation: 实施例公开了一种方法，包括在基板的顶部r面上形成至少一个化合物半导体层，沿着导向线的长度在基板的底部r面上形成用于切割的线，其中引导线延伸在 基板的（11-22）平面方向，其中所述引导线从边缘的一部分延伸到所述边缘的另一部分，并且其中所述边缘设置在所述边缘的顶部r面和底部r面之间 衬底，并且向衬底的底部r面施加一个力以沿着线切割衬底以在（11-22）平面方向上进行切割，并沿着至少在该平面方向的c面上形成一个切割面 一种化合物半导体。

公开(公告)号：US20130217209A1

公开(公告)日：2013-08-22

申请号：US13440640

申请日：2012-04-05

Applicant: Young Hun HAN ,  Dong Han Yoo

Inventor： Young Hun HAN ,  Dong Han Yoo

IPC: H01L21/78

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/16

Abstract: Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-22)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-22)-plane direction and to form a cleaved facet along a c-plane of the at least one compound semiconductor.

Abstract translation: 实施例公开了一种方法，包括在基板的顶部r面上形成至少一个化合物半导体层，沿着导向线的长度在基板的底部r面上形成用于切割的线，其中引导线延伸在 基板的（11-22）平面方向，其中所述引导线从边缘的一部分延伸到所述边缘的另一部分，并且其中所述边缘设置在所述边缘的顶部r面和底部r面之间 衬底，并且向衬底的底部r面施加一个力以沿着线切割衬底以在（11-22）平面方向上进行切割，并沿着至少在该平面方向的c面上形成一个切割面 一种化合物半导体。

公开(公告)号：US20130217162A1

公开(公告)日：2013-08-22

申请号：US13440321

申请日：2012-04-05

Applicant: Young Hun HAN ,  Dong Han Yoo

Inventor： Young Hun HAN ,  Dong Han Yoo

IPC: H01L21/78

CPC classification number: H01L21/0245 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/02538 ,  H01L33/0095

Abstract: Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-20)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-20)-plane direction and to form a cleaved facet along a m-plane of the at least one compound semiconductor.

Abstract translation: 实施例公开了一种方法，包括在基板的顶部r面上形成至少一个化合物半导体层，沿着导向线的长度在基板的底部r面上形成用于切割的线，其中引导线延伸在 基板的（11-20）平面方向，其中所述引导线从边缘的一部分延伸到所述边缘的另一部分，并且其中所述边缘设置在所述边缘的顶部r面和底部r面之间 并且向衬底的底部r面施加一个力，沿着（11-20）平面方向上的切割线切割衬底，并沿着至少在（11-20））平面方向上的m平面形成切割面 一种化合物半导体。