公开(公告)号：US06771869B2

公开(公告)日：2004-08-03

申请号：US10125169

申请日：2002-04-18

申请人： Yuliya A. Akulova ,  Kenneth G. Glogovsky ,  Mark S. Hybertsen ,  Charles W. Lentz ,  Abdallah Ougazzaden

发明人： Yuliya A. Akulova ,  Kenneth G. Glogovsky ,  Mark S. Hybertsen ,  Charles W. Lentz ,  Abdallah Ougazzaden

IPC分类号： G02B626

CPC分类号： G02B6/132 ,  G02B6/4204 ,  H01S5/02284 ,  H01S5/0261 ,  H01S5/2059 ,  H01S2301/176

摘要： The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

摘要翻译： 本发明提供一种光电子器件及其制造方法以及包括该光电器件的光通信系统。 在一个具体实施例中，光电子器件可以包括位于衬底上的有源器件和位于有源器件附近以及衬底附近的无源器件。 光电子器件还可以包括位于有源和无源器件之上的掺杂覆层，以及位于掺杂覆层和无源器件上的势垒层。

公开(公告)号：US06664605B1

公开(公告)日：2003-12-16

申请号：US09539882

申请日：2000-03-31

申请人： Yuliya A. Akulova ,  Sung-nee G. Chu ,  Michael Geva ,  Mark S. Hybertsen ,  Charles W. Lentz ,  Abdallah Ougazzaden

发明人： Yuliya A. Akulova ,  Sung-nee G. Chu ,  Michael Geva ,  Mark S. Hybertsen ,  Charles W. Lentz ,  Abdallah Ougazzaden

IPC分类号： H01L310232

CPC分类号： H01S5/227 ,  G02F1/025 ,  H01S5/221 ,  H01S5/2213 ,  H01S5/2226 ,  H01S5/3072 ,  H01S5/50

摘要： A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

摘要翻译： 公开了一种用于减少有源区中的掺杂剂原子的扩散以及相邻掺杂区中不同类型的掺杂剂原子在光电器件中的相互扩散的方法。 本发明的方法采用多个InAlAs和/或InGaAlAs层以避免掺杂剂原子与有源区之间以及光电子器件的相邻阻挡结构中的掺杂剂原子之间的直接接触。 还公开了抑制不同类型的掺杂剂原子的相互扩散的半绝缘掩埋隆起结构以及脊结构。