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    Corrosion-resistant member
    2.
    发明授权
    Corrosion-resistant member 失效
    耐腐蚀构件

    公开(公告)号：US06258741B1

    公开(公告)日：2001-07-10

    申请号：US09201030

    申请日：1998-11-30

    申请人： Shoji Kohsaka ,  Yumiko Itoh ,  Hitoshi Matsunosako ,  Hidemi Matsumoto ,  Masahito Nakanishi

    发明人： Shoji Kohsaka ,  Yumiko Itoh ,  Hitoshi Matsunosako ,  Hidemi Matsumoto ,  Masahito Nakanishi

    IPC分类号： C04B35563

    CPC分类号： C04B35/563

    摘要： This invention relates to a corrosion-resistant member used in a region in which a gas or a plasma of a halogen-containing compound is used, in a process for producing semiconductors, especially a member used as jigs such as a supporter for supporting a material to be treated, or as an inner wall member in an apparatus for producing semiconductors, which has a high corrosion resistance to a fluorine type or a chlorine type corrosive gas, or a fluorine type or a chlorine type plasma. According to this invention, there are provided a corrosion-resistant member to be used ina region in which a gas or plasma of a halogen compound is used in a process of producing a semiconductor, wherein at least surface exposed to the gas or plasma is formed of a boron carbide sintered body having a relative density of at least 96% and containing 300 ppm or below, in a total amount, of an alkali metal, an alkalin earth metal and a transition metal, and a process for producing the same.

    摘要翻译： 本发明涉及在半导体制造方法中使用的含卤素化合物的气体或等离子体的区域中使用的耐腐蚀性构件，特别是用作支撑材料的支撑体等的构件 作为对氟类或氯型腐蚀性气体或氟型或氯型等离子体具有高耐腐蚀性的半导体制造装置中的内壁部件。 根据本发明，提供了在制造半导体的工艺中使用卤素化合物的气体或等离子体的区域中使用的耐腐蚀构件，其中形成至少暴露于气体或等离子体的表面 的碳化硼烧结体及其制造方法，其总量相对于碱金属，碱土金属和过渡金属的相对密度为96％以上且含有300ppm以下。

    Ceramic material resistant to halogen plasma and member utilizing the same
    6.
    发明授权
    Ceramic material resistant to halogen plasma and member utilizing the same 失效
    耐卤素等离子体的陶瓷材料和利用其的构件

    公开(公告)号：US06916559B2

    公开(公告)日：2005-07-12

    申请号：US10198675

    申请日：2002-07-17

    申请人： Shunichi Murakawa ,  Yumiko Itoh ,  Hiroshi Aida ,  Katsumi Nakamura ,  Tetsuzi Hayasaki

    发明人： Shunichi Murakawa ,  Yumiko Itoh ,  Hiroshi Aida ,  Katsumi Nakamura ,  Tetsuzi Hayasaki

    IPC分类号： C04B35/18 ,  C04B35/50 ,  B32B9/00 ,  C04B35/505

    CPC分类号： C04B35/44 ,  C04B35/18 ,  Y10T428/249953 ,  Y10T428/26

    摘要： A member used within a plasma processing apparatus and exposed to a plasma of a halogen gas such as BCl3 or Cl2 is formed from a sintered body of metals of Group IIIa of Periodic Table such as Y, La, Ce, Nd and Dy, and Al and/or Si, for example, 3Y2O3.5Al2O3, 2Y2O3.Al2O3, Y2O3.Al2O3 or disilicate or monosilicate, and in particular, in this sintered body, the content of impurity metals of Group IIa of Periodic Table contained in the sintered body is controlled to be 0.15 wt % or more in total. Specifically, for this member, an yttrium-aluminum-garnet sintered body having a porosity of 3% or less and also having a surface roughness of 1 μm or less in center line average roughness Ra is utilized.

    摘要翻译： 在等离子体处理装置中使用并暴露于诸如BCl 3或Cl 2 2等卤素气体的等离子体的构件由IIIa族金属的烧结体形成 诸如Y，La，Ce，Nd和Dy的周期表，以及Al和/或Si，例如3Y 2 O 3，5 Al 2， 2个O 3，3个，3个，3个，3个，3个，3个，3个，3个，3个， Y 2 O 3 3 N 3 O 3或二硅酸盐或单硅酸盐，特别是在该烧结体 烧结体中含有的元素周期表IIa族杂质金属的总量控制在0.15重量％以上。 具体地说，对于该部件，使用孔径在3％以下，中心线平均粗糙度Ra的表面粗糙度为1μm以下的钇 - 铝 - 石榴石烧结体。

    Ceramic materials resistant to halogen plasma and components using the same
    7.
    发明授权
    Ceramic materials resistant to halogen plasma and components using the same 失效
    耐卤素等离子体的陶瓷材料和使用其的组分

    公开(公告)号：US06447937B1

    公开(公告)日：2002-09-10

    申请号：US09031401

    申请日：1998-02-26

    申请人： Shunichi Murakawa ,  Yumiko Itoh ,  Hiroshi Aida ,  Katsumi Nakamura ,  Tetsuzi Hayasaki

    发明人： Shunichi Murakawa ,  Yumiko Itoh ,  Hiroshi Aida ,  Katsumi Nakamura ,  Tetsuzi Hayasaki

    IPC分类号： C04B3510

    CPC分类号： C04B35/44 ,  C04B35/18 ,  Y10T428/249953 ,  Y10T428/26

    摘要： A member used within a plasma processing apparatus and exposed to a plasma of a halogen gas such as BCl3 or Cl2 is formed from a sintered body of metals of Group IIIa of Periodic Table such as Y, La, Ce, Nd and Dy, and Al and/or Si, for example, 3Y2O3·5Al2O3, 2Y2O3·Al2O3, Y2O3·Al2O3 or disilicate or monosilicate, and in particular, in this sintered body, the content of impurity metals of Group IIa of Periodic Table contained in the sintered body is controlled to be 0.15 wt % or more in total. Specifically, for this member, an yttrium-aluminum-garnet sintered body having a porosity of 3% or less and also having a surface roughness of 1 &mgr;m or less in center line average roughness Ra is utilized.

    摘要翻译： 在等离子体处理装置中使用并暴露于诸如BCl 3或Cl 2等卤素气体的等离子体的构件由周期表IIIa族金属的烧结体形成，例如Y，La，Ce，Nd和Dy，Al 和/或Si，例如3Y2O3.5Al2O3，2Y2O3Al2O3，Y2O3.Al2O3或二硅酸盐或单硅酸盐，特别是在该烧结体中，烧结体中所含的周期表IIa族杂质金属的含量为 总共控制在0.15重量％以上。 具体地说，对于该部件，使用孔径在3％以下，中心线平均粗糙度Ra的表面粗糙度为1μm以下的钇 - 铝 - 石榴石烧结体。

    Ceramic member resistant to halogen-plasma corrosion
    8.
    发明授权
    Ceramic member resistant to halogen-plasma corrosion 失效
    陶瓷构件耐卤素等离子体腐蚀

    公开(公告)号：US06383964B1

    公开(公告)日：2002-05-07

    申请号：US09450162

    申请日：1999-11-29

    申请人： Masahiro Nakahara ,  Yumiko Itoh

    发明人： Masahiro Nakahara ,  Yumiko Itoh

    IPC分类号： C04B35505

    CPC分类号： C04B35/18 ,  C04B35/117

    摘要： The present invention is to provide ceramic members for being used as members constituting a processing chamber for etching or cleaning semiconductor substrates or wafers by halogen plasma. A ceramic member includes at least 10% by volume of a compound of yttrium-aluminum-garnet (YAG) phase and not more than 90% by volume of at least an oxide phase selected from aluminum oxide, yttrium oxide and aluminum nitride. Particularly, the ceramic member contains yttrium within a range of 35 to 80 mole % in terms of yttrium oxide Y2O3 and aluminum within a range of 20 to 65 mole % in terms of aluminum oxide Al2O3 to form a mixture of YAG phase with yttria phase, producing ceramic material having high corrosion resistance to halogenous gas and its plasma. Such ceramic material may be well applicable to members to be exposed by the halogen plasma, for example, a chamber wall, a wafer stage, a clamp ring, a shower head, which are used in systems for etching and cleaning semiconductor wafers. A ceramic member of the invention can also be composed of YAG and alumina or aluminum nitride, showing high thermal conductivity enough to prevent a deposit of the reaction products of halide over the whole members in the chamber by external heating.

    摘要翻译： 本发明提供陶瓷构件，用作构成用于通过卤素等离子体蚀刻或清洗半导体衬底或晶片的处理室的构件。 陶瓷构件包括至少10体积％的钇 - 铝 - 石榴石（YAG）相的化合物和不大于90体积％的至少一种选自氧化铝，氧化钇和氮化铝的氧化物相。 特别地，陶瓷构件以氧化钇Y 2 O 3换算为35〜80摩尔％的范围，铝氧化铝为20〜65摩尔％的铝，形成YAG相与氧化钇相的混合物， 生产对卤素气体及其等离子体具有高耐腐蚀性的陶瓷材料。 这种陶瓷材料可以很好地应用于被卤素等离子体暴露的构件，例如用于蚀刻和清洁半导体晶片的系统中的室壁，晶片台，夹紧环，淋浴头。 本发明的陶瓷构件也可以由YAG和氧化铝或氮化铝组成，显示出高的导热性，足以防止卤化物的反应产物通过外部加热沉积在室中的整个构件上。