摘要:
Provided are an apparatus and a method of depositing films capable of controlling deposition rate and film properties using the charging behavior of nanoparticles formed in gas phase. The apparatus includes a chamber in which a substrate is loaded, a gas supply system configured to introduce a reaction gas into the chamber, a filament configured to emit heat for dissociating the introduced reaction gas, a power supply configured to apply a constant alternate current or direct current voltage, and a bias supply unit configured to apply a bias to at least one of a top, a side and a bottom of the substrate using a voltage applied from the power supply while a film is deposited on the substrate from the dissociated reaction gas, the bias supply unit being separated from the substrate.
摘要:
A method for manufacturing a thin film is provided. A substrate is loaded into a chamber. A first reaction gas and a second reaction gas are supplied into the chamber. The first reaction gas is dissociated to form crystalline nanoparticles. An amorphous material is inhibited from being formed on the substrate using the second reaction gas. Thereafter, a crystalline thin film is formed from the crystalline nanoparticles provided on the substrate.